Method and apparatus for plasma dicing a semi-conductor wafer
The present invention provides a method for plasma dicing a substrate. The method comprising providing a process chamber having a wall; providing a plasma source adjacent to the wall of the process chamber; providing a work piece support within the process chamber; placing the substrate onto a support film on a frame to form a work piece work piece; loading the work piece onto the work piece support; providing a clamping electrode for electrostatically clamping the work piece to the work piece support; providing a mechanical partition between the plasma source and the work piece; generating a plasma through the plasma source; and etching the work piece through the generated plasma.
1. A method for plasma dicing a substrate, the method comprising:
providing a process chamber having a wall;
providing a plasma source adjacent to the wall of the process chamber;
providing a work piece support within the process chamber;
providing a lift mechanism within the process chamber;
placing a work piece onto said work piece support using said lift mechanism, said work piece having a support film, a frame and the substrate, said lift mechanism touching a bottom surface of the frame of said work piece;
providing a mechanical partition within the process chamber, said mechanical partition being positioned between the plasma source and said work piece;
generating a plasma using the plasma source;
etching the work piece using the generated plasma;
measuring a property uniformity; and
adjusting said positioning of said mechanical partition based on said measuring step.
2. The method according to claim 1 wherein said property uniformity is an etch rate.
3. The method according to claim 1 wherein said property uniformity is a feature profile.
4. The method according to claim 1 wherein said property uniformity is an etch selectivity.
5. The method according to claim 1 wherein said property uniformity is a critical dimension.
6. The method according to claim 1 wherein said mechanical partition having a plurality of perforations having a perforation size.
7. The method according to claim 6 further comprising adjusting said perforation size on said mechanical partition.
8. The method according to claim 1 wherein said mechanical partition having a plurality of perforations having a perforation spacing.
9. The method according to claim 8 further comprising adjusting said perforation spacing on said mechanical partition.
10. The method according to claim 1 wherein said mechanical partition having a plurality of perforations having a perforation shape.
11. The method according to claim 10 further comprising adjusting said perforation shape on said mechanical partition.
12. The method according to claim 1 wherein said mechanical partition having a plurality of perforations having a perforation aspect ratio.
13. The method according to claim 12 further comprising adjusting said perforation aspect ratio on said mechanical partition.
14. The method according to claim 1 further comprising adjusting a partition thickness of said mechanical partition.