IP Library Granted Patent US 10,403,359
Granted Patent B2
US 10,403,359 · App. 15/918,662 · Granted Sep 3, 2019

Non-contact electron beam probing techniques and related structures

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Quick Facts
Patent No.
US 10,403,359
App. No.
15/918,662
Granted
Sep 3, 2019
Kind
B2
Abstract

Methods, systems, and devices for non-contact electron beam probing techniques, including at one or more intermediate stages of fabrication, are described. One subset of first access lines may be grounded and coupled with one or more memory cells. A second subset of first access lines may be floating and coupled with one or more memory cells. A second access line may correspond to each first access line and may be configured to be coupled with the corresponding first access line, by way of one or more corresponding memory cells, when scanned with an electron beam. A leakage path may be determined by comparing an optical pattern generated in part by determining a brightness of each scanned access line and comparing the generated optical pattern with a second optical pattern.

Claims (13)

1. A method, comprising:

identifying a first subset of a plurality of access lines configured to be coupled with a ground reference when scanned by an electron beam;

identifying a second subset of the plurality of access lines configured to be isolated from the ground reference when scanned by the electron beam;

scanning the plurality of access lines with the electron beam;

generating an optical pattern based at least in part on scanning the plurality of access lines with the electron beam;

comparing the generated optical pattern to a second optical pattern; and

determining a leakage path based at least in part on a difference between the generated optical pattern and the second optical pattern.

2. The method of claim 1 , wherein generating the optical pattern comprises:

determining a brightness of each access line when scanned by the electron beam.

3. The method of claim 1 , wherein the second optical pattern is based at least in part on a configuration of a plurality of lower access lines each respectively corresponding to one of the plurality of access lines.

4. The method of claim 1 , wherein the second optical pattern comprises:

one or more sets of access lines having a first expected brightness, each set of access lines having the first expected brightness adjacent to an access line having a second expected brightness that is lower than the first expected brightness.

5. The method of claim 4 , wherein each set of access lines comprises one, two, or four access lines in the first subset.

Assignments (5)
RELEASE OF SECURITY INTEREST Recorded Nov 12, 2019
From: JPMORGAN CHASE BANK, N.A., AS COLLATERAL AGENT
To: MICRON TECHNOLOGY, INC.; MICRON SEMICONDUCTOR PRODUCTS, INC.
Reel/Frame 051028/0001 →
RELEASE OF SECURITY INTEREST Recorded Oct 11, 2019
From: MORGAN STANLEY SENIOR FUNDING, INC., AS COLLATERAL AGENT
To: MICRON TECHNOLOGY, INC.
Reel/Frame 050713/0001 →
SUPPLEMENT NO. 9 TO PATENT SECURITY AGREEMENT Recorded Aug 9, 2018
From: MICRON TECHNOLOGY, INC.
To: MORGAN STANLEY SENIOR FUNDING, INC., AS COLLATERAL AGENT
Reel/Frame 047282/0463 →
SECURITY INTEREST Recorded Jul 13, 2018
From: MICRON TECHNOLOGY, INC.; MICRON SEMICONDUCTOR PRODUCTS, INC.
To: JPMORGAN CHASE BANK, N.A., AS COLLATERAL AGENT
Reel/Frame 047540/0001 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 16, 2018
From: MAJUMDAR, AMITAVA; KAMANA, RAJESH; WANG, HONGMEI; LYONSMITH, SHAWN D.; HILL, ERVIN T.; LIU, ZENGTAO T.; HUG, MARLON W.
To: MICRON TECHNOLOGY, INC.
Reel/Frame 045252/0851 →