Substrate processing apparatus and substrate processing method
Provided is a substrate processing apparatus in which a drying process of drying a substrate using a processing fluid in a supercritical state is performed. The substrate processing apparatus includes: a processing container in which the drying process is performed; a discharge valve provided in a discharge flow path that discharges the processing fluid from the processing container; and a controller configured to control the discharge valve. When the inside of the processing container is decompressed from a first pressure at which the processing fluid is in the supercritical state to an atmospheric pressure, through a second pressure than the first pressure and a third pressure lower than the second pressure, the controller controls a valve opening degree of the discharge valve so that the decompression rate is equal from the second pressure to the third pressure.
1. A substrate processing apparatus comprising:
a processing container in which a drying process is performed using a processing fluid in a supercritical state;
a discharge valve provided in a discharge flow path that discharges the processing fluid from the processing container; and
a controller configured to control the discharge valve to decompress an inside of the processing chamber from a first pressure at which the processing fluid is in the supercritical state to an atmospheric pressure, through a second pressure lower than the first pressure, and then to a third pressure lower than the second pressure,
wherein the controller controls a valve opening degree of the discharge valve in such a manner that a decompression rate is equal from the second pressure to the third pressure.
2. The substrate processing apparatus of claim 1 , wherein the processing fluid is in the supercritical state at the second pressure and in a gaseous state at the third pressure.
3. The substrate processing apparatus of claim 1 , wherein, when the processing container is decompressed from the first pressure to an atmospheric pressure, the controller controls the discharge valve so as to gradually decrease the valve opening degree and then gradually increase the valve opening degree.
4. The substrate processing apparatus of claim 1 , wherein the third pressure is equal to the atmospheric pressure.
5. The substrate processing apparatus of claim 1 , wherein the discharge valve is a variable valve of which the valve opening degree is adjustable.
6. The substrate processing apparatus of claim 1 , wherein the discharge flow path includes two or more discharge flow path portions which are arranged in parallel, and
two or more discharge valves are provided in the two or more discharge flow path portions, respectively.
7. The substrate processing apparatus of claim 1 , wherein the discharge flow path includes an ejector further provided therein to cause the fluid to flow through a flow path different from the discharge flow path and to decompress the inside of the processing container using a flow of the fluid in the different flow path, and
the ejector is operated from the third pressure to the atmospheric pressure to decompress the inside of the processing container.
8. A substrate processing apparatus comprising:
a processing container in which a drying process is performed using a processing fluid in a supercritical state;
a discharge valve provided in a discharge flow path that discharges the processing fluid from and inside of the processing container;
an ejector provided in the discharge flow path and connected to a liquid supply via a liquid supply path separate from the discharge path, the ejector being configured to forcibly exhaust and decompress the inside of the processing container when a fluid flows from the liquid supply to the ejector via the liquid supply path; and
a controller configured to control the ejector to decompress the inside of the processing container from a first pressure at which the processing fluid is in the supercritical state to a second pressure lower than the first pressure,
wherein the controller does not operate the ejector from the first pressure to the second pressure and operates the ejector from the second pressure to the atmospheric pressure.
9. A substrate processing method comprising:
a first decompressing that decompresses an inside of a processing container in which a drying process is performed using a processing fluid in a supercritical state from a first pressure at which the processing fluid is in the supercritical state to a second pressure lower than the first pressure;
a second decompressing that decompresses the inside of the processing container from the second pressure to a third pressure lower than the second pressure; and
a third decompressing that decompresses the inside of the processing container from the third pressure to an atmospheric pressure,
wherein the second decompressing is performed in such a manner that a pressure in the processing container is reduced at a constant decompression rate.