Sacrificial alignment ring and self-soldering vias for wafer bonding
A method of bonding a first substrate to a second substrate, wherein the first substrate includes first electrical contacts on a top surface of the first substrate, and wherein the second substrate includes second electrical contacts on a bottom surface of the second substrate. The method includes forming a block of polyimide on the top surface of the first substrate, wherein the block of polyimide has a rounded upper corner, and vertically moving the top surface of the first substrate and the bottom surface of the second substrate toward each other until the first electrical contacts abut the second electrical contacts, wherein during the moving, the second substrate makes contact with the rounded upper corner of the polyimide causing the first and second substrates to move laterally relative to each other.
1. A method of bonding a first substrate to a second substrate, wherein the first substrate includes first electrical contacts on a top surface of the first substrate, and wherein the second substrate includes second electrical contacts on a bottom surface of the second substrate, the method comprising:
forming a block of polyimide on the top surface of the first substrate, wherein the block of polyimide has a rounded upper corner; and
vertically moving the top surface of the first substrate and the bottom surface of the second substrate toward each other until the first electrical contacts abut the second electrical contacts, wherein during the vertical moving, the second substrate makes contact with the rounded upper corner of the polyimide causing the first and second substrates to move laterally relative to each other.
2. The method of claim 1 , wherein the polyimide block has a ring shape that encircles the first electrical contacts.
3. The method of claim 1 , further comprising:
forming a layer of inorganic material disposed between the polyimide block and the first substrate.
4. The method of claim 3 , wherein the inorganic material is one of oxide and nitride.
5. The method of claim 1 , wherein each of the first electrical contacts includes Sn—Cu material.
6. The method of claim 5 , wherein the Sn—Cu material includes between 0.5% to 5% Cu as a percentage of overall composition.
7. The method of claim 5 , wherein each of the first electrical contacts further includes a metal block in contact with the Sn—Cu material.
8. The method of claim 5 , further comprising:
applying heat to the first and second electrical contacts so that a solder connection is formed between each of the first electrical contacts and one of the second electrical contacts.
9. The method of claim 1 , further comprising:
removing the polyimide block after the moving.
10. The method of claim 1 , wherein the first substrate includes a third electrical contact on the top surface, the method further comprising:
forming an aluminum pad on the third electrical contact, wherein a portion of the polyimide block is directly on the aluminum pad; and
connecting a wire to the aluminum pad.
11. The method of claim 1 , wherein the forming of the polyimide block comprises:
forming a polyimide layer over the top surface of the first substrate;
exposing portions of the polyimide layer to light; and
removing the portions of the polyimide layer that were exposed to light.
12. A method of bonding a first substrate to a second substrate, wherein the first substrate includes first electrical contacts on a top surface of the first substrate, and wherein the second substrate includes second electrical contacts on a bottom surface of the second substrate, the method comprising:
forming a first material over the top surface of the first substrate and over the first electrical contacts;
forming vias extending through the first material to expose the first electrical contacts;
forming Sn—Cu material in the vias;
forming a layer of polyimide over the top surface of the first substrate;
selectively removing one or more portions of the layer of polyimide, leaving a block of the polyimide over the top surface of the first substrate, wherein the block of polyimide has a rounded upper corner; and
vertically moving the top surface of the first substrate and the bottom surface of the second substrate toward each other until the Sn—Cu material abuts the second electrical contacts, wherein during the vertical moving, the second substrate makes contact with the rounded upper corner of the polyimide causing the first and second substrates to move laterally relative to each other.
13. The method of claim 12 , wherein the polyimide block has a ring shape that encircles the first electrical contacts.
14. The method of claim 12 , further comprising:
forming a layer of inorganic material between the polyimide block and the first substrate.
15. The method of claim 14 , wherein the inorganic material is one of oxide and nitride.
16. The method of claim 12 , wherein the Sn—Cu material includes between 0.5% to 5% Cu as a percentage of overall composition.
17. The method of claim 12 , further comprising:
applying heat to the Sn—Cu material so that a solder connection is formed between the Sn—Cu material and the second electrical contacts.
18. The method of claim 12 , wherein the forming of the Sn—Cu material comprises:
forming discrete, alternating layers of Sn material and Cu material; and
annealing the alternating layers so that the Sn material layers alloys with the Cu material layers.
19. The method of claim 12 , wherein the forming of the Sn—Cu material comprises:
forming a layer of Sn—Cu alloy over the first material and in the vias; and
removing the layer of Sn—Cu alloy over the first material while leaving the Sn—Cu alloy in the vias.
20. The method of claim 12 , wherein the first substrate includes a third electrical contact on the top surface, the method further comprising:
forming an aluminum pad on the third electrical contact, wherein a portion of the polyimide block is directly on the aluminum pad; and
connecting a wire to the aluminum pad.
21. The method of claim 12 , further comprising:
removing the polyimide block after the moving.