Semiconductor device, manufacturing method thereof, solid-state imaging device, and electronic apparatus with multi-layer interconnects
A method of manufacturing a semiconductor device includes bonding a first semiconductor wafer including a first substrate and a first insulating layer formed to contact one surface of the first substrate, and a second semiconductor wafer including a second substrate and a second insulating layer, forming a third insulating layer, performing etching so that the second insulating layer remains on a second wiring layer, forming a first connection hole, forming an insulating film on the first connection hole, performing etching of the second insulating layer and the insulating film, forming a second connection hole, and forming a first via formed in inner portions of the connection holes and connected to the second wiring layer, wherein a diameter of the first connection hole formed on the other surface of the first substrate is greater than a diameter of the first connection hole formed on the third insulating layer.
1. A light detecting device comprising:
a first semiconductor section including a pixel array having a plurality of photoelectric conversion portions and a first wiring layer;
a second semiconductor section including a second wiring layer;
a third semiconductor section including a third wiring layer;
a first connection layer disposed between the first semiconductor section and the second semiconductor section;
a second connection layer disposed between the second semiconductor section and the third semiconductor section;
a first conductor extending from the first semiconductor section to the second semiconductor section and penetrating the first connection layer; and
a second conductor extending from the second semiconductor section to the third semiconductor section and penetrating the second connection layer;
wherein,
the first conductor and the second conductor are electrically isolated from one another,
the first conductor includes a first point connected to a first region of the second wiring layer and electrically connects to a first region of the first wiring layer, and
the second conductor includes a second point connected to a second region of the second wiring layer and a third point connected to a first region of the third wiring layer.
2. The light detecting device of claim 1 , wherein the second conductor includes a fourth point in the second semiconductor section, the fourth point connected to a third region of the second wiring layer.
3. The light detecting device of claim 1 , wherein the first semiconductor section includes a first substrate and a first insulating layer and the first wiring layer is within the first insulating layer.
4. The light detecting device of claim 3 , wherein the second semiconductor section includes a second substrate and a second insulating layer and the second wiring layer is within the second insulating layer.
5. The light detecting device of claim 4 , further comprising:
a third insulating layer disposed between the first connection layer and the second substrate.
6. The light detecting device of claim 4 , wherein the third semiconductor section includes a third substrate and a third insulating layer and the third wiring layer is within the third insulating layer.
7. The light detecting device of claim 1 , further comprising:
a third conductor extending from the first semiconductor section to the second semiconductor section and penetrating the second connection layer, wherein the third conductor is electrically connected to a second region of the first wiring layer and a third region of the second wiring layer.
8. The light detecting device of claim 7 , wherein the first conductor is electrically connected to a third region of the first wiring layer.
9. The light detecting device of claim 1 , wherein a logic circuit is formed in the second semiconductor section.
10. An electronic apparatus comprising:
a light detecting device including a plurality of photoelectric conversion portions;
an optical system which passes incident light to at least one of the plurality of photoelectric conversion portions of the light detecting device; and
a signal processing circuit which processes an output signal of the light detecting device, the light detecting device including:
a first semiconductor section including a pixel array having the plurality of photoelectric conversion portions and a first wiring layer;
a second semiconductor section including a second wiring layer;
a third semiconductor section including a third wiring layer;
a first connection layer disposed between the first semiconductor section and the second semiconductor section;
a second connection layer disposed between the second semiconductor section and the third semiconductor section;
a first conductor extending from the first semiconductor section to the second semiconductor section and penetrating the first connection layer; and
a second conductor extending from the second semiconductor section to the third semiconductor section and penetrating the second connection layer;
wherein,
the first conductor and the second conductor are electrically isolated from one another,
the first conductor includes a first point connected to a first region of the second wiring layer and electrically connects to a first region of the first wiring layer, and
the second conductor includes a second point connected to a second region of the second wiring layer and a third point connected to a first region of the third wiring layer.
11. The electronic apparatus of claim 10 , wherein the second conductor includes a fourth point in the second semiconductor section, the fourth point connected to a third region of the second wiring layer.
12. The electronic apparatus of claim 10 , wherein the first semiconductor section includes a first substrate and a first insulating layer and the first wiring layer is within the first insulating layer.
13. The electronic apparatus of claim 12 , wherein the second semiconductor section includes a second substrate and a second insulating layer and the second wiring layer is within the second insulating layer.
14. The electronic apparatus of claim 13 , further comprising:
a third insulating layer disposed between the first connection layer and the second substrate.
15. The electronic apparatus of claim 13 , wherein the third semiconductor section includes a third substrate and a third insulating layer and the third wiring layer is within the third insulating layer.
16. The electronic apparatus of claim 10 , further comprising:
a third conductor extending from the first semiconductor section to the second semiconductor section and penetrating the second connection layer, wherein the third conductor is electrically connected to a second region of the first wiring layer and a third region of the second wiring layer.
17. The electronic apparatus of claim 16 , wherein the first conductor is electrically connected to a third region of the first wiring layer.
18. The electronic apparatus of claim 10 , wherein a logic circuit is formed in the second semiconductor section.