Method of manufacturing semiconductor device
A technique capable of forming a film at the bottom of a deep hole having a high aspect ratio. A method of manufacturing a semiconductor device, including: (a) loading a substrate having a hole into a transfer space via a substrate loading/unloading port; (b) moving the substrate to a processing space; (c) forming a precursor in the hole by simultaneously supplying a first process gas to the substrate in the processing space and an inert gas into the transfer space with the processing space spatially connected to the transfer space and maintaining a difference between a first inner pressure of the processing space and a first inner pressure of the transfer space within a predetermined range; and (d) forming a thin film in the hole after performing (b).
1. A method of manufacturing a semiconductor device, comprising:
(a) loading a substrate having a hole into a transfer space via a substrate loading/unloading port;
(b) moving the substrate to a processing space;
(c) forming a precursor in the hole by simultaneously supplying a first process gas to the substrate in the processing space and an inert gas into the transfer space with the processing space spatially connected to the transfer space and maintaining a difference between a first inner pressure of the processing space and a first inner pressure of the transfer space within a predetermined range; and
(d) forming a thin film in the hole after performing (b) by modifying the precursor by supplying a second process gas to the substrate in the processing space and the inert gas into the transfer space with the processing space spatially connected to the transfer space and maintaining a difference between a second inner pressure of the processing space and a second inner pressure of the transfer space within a predetermined range, wherein the second inner pressure of the processing space is higher than the first inner pressure of the processing space.
2. The method of claim 1 , wherein the first inner pressure of the processing space is lower than a pressure whereat a decomposed first process gas recombines.
3. The method of claim 2 , wherein the first inner pressure of the transfer space is equal to or higher than the first inner pressure of the processing space.
4. The method of claim 3 , wherein the second inner pressure of the transfer space is equal to or higher than the second inner pressure of the processing space.
5. The method of claim 4 , wherein the first process gas is easily decomposed.
6. The method of claim 3 , wherein the first process gas is easily decomposed.
7. The method of claim 2 , wherein the second inner pressure of the transfer space is equal to or higher than the second inner pressure of the processing space.
8. The method of claim 7 , wherein the first process gas is easily decomposed.
9. The method of claim 2 , wherein the first process gas is easily decomposed.
10. The method of claim 1 , wherein the first inner pressure of the transfer space is equal to or higher than the first inner pressure of the processing space.
11. The method of claim 10 , wherein the second inner pressure of the transfer space is equal to or higher than the second inner pressure of the processing space.
12. The method of claim 11 , wherein the first process gas is easily decomposed.
13. The method of claim 10 , wherein the first process gas is easily decomposed.
14. The method of claim 1 , wherein the second inner pressure of the transfer space is equal to or higher than the second inner pressure of the processing space.
15. The method of claim 14 , wherein the first process gas is easily decomposed.
16. The method of claim 1 , wherein the first process gas is easily decomposed.