Mixing organic materials into hybrid packages

1. A method comprising:

forming an interposer comprising:

a semiconductor substrate; and

an interconnect structure over the semiconductor substrate;

bonding a device die to the interposer;

encapsulating the device die in a first encapsulating material;

attaching a supporting substrate, wherein the supporting substrate and the semiconductor substrate are on opposite sides of the device die;

removing an entirety of the semiconductor substrate from the device die;

revealing portions of metal lines in the interconnect structure;

forming conductive features physically contacting the portions of the metal lines; and

performing a die-saw process to separate the interconnect structure and the supporting substrate into a plurality of packages, wherein both of the interconnect structure and the supporting substrate are sawed in the die-saw process.

2. The method of claim 1 , wherein the removing the semiconductor substrate comprises grinding the semiconductor substrate.

3. The method of claim 1 , wherein the supporting substrate is a blank semiconductor substrate.

4. The method of claim 1 further comprising:

encapsulating a package in the plurality of packages in a second encapsulating material; and

forming redistribution lines over and electrically coupling to the package.

5. The method of claim 4 , wherein the first encapsulating material and the second encapsulating material have different Coefficients of Thermal Expansion (CTE).

6. The method of claim 4 further comprising performing a die saw to saw the second encapsulating material.

7. The method of claim 1 , wherein no thinning is performed on the device die before the first encapsulating material is encapsulated.

8. A method comprising:

receiving an interposer wafer comprising:

a semiconductor substrate;

through-vias in the semiconductor substrate; and

an interconnect structure over the semiconductor substrate;

bonding a plurality of device dies to the interposer wafer;

encapsulating the plurality of device dies in a first encapsulating material;

attaching a supporting substrate, wherein the supporting substrate and the semiconductor substrate are on opposite sides of the plurality of device dies;

forming conductive features over and electrically coupling to the device dies;

sawing the interposer wafer, the supporting substrate, and the first encapsulating material to form a plurality of packages;

encapsulating one of the packages in a second encapsulating material;

polishing the semiconductor substrate to reveal the through-vias;

after the polishing, forming redistribution lines overlapping the second encapsulating material and the one of the packages, wherein the redistribution lines are electrically coupled to the through-vias; and

sawing the second encapsulating material to form an additional plurality of packages.

9. The method of claim 8 , wherein the supporting substrate is attached to semiconductor substrates of the plurality of device dies through fusion bonding.

10. The method of claim 8 , wherein first metal pads in the interposer wafer are bonded to second metal pads in the plurality of device dies, and a first surface dielectric layer in the interposer wafer is directly bonded to a second surface dielectric layer in the plurality of device dies.

11. The method of claim 8 , wherein the first encapsulating material and the second encapsulating material have different Coefficients of Thermal Expansion (CTEs).

12. The method of claim 8 , wherein no thinning is performed on the plurality of device dies before the first encapsulating material is encapsulated.

13. The method of claim 8 further comprising removing the semiconductor substrate of the interposer wafer before the sawing.

14. A method comprising:

forming a wafer comprising:

forming a first dielectric layer over a semiconductor substrate;

forming an interconnect structure over the first dielectric layer, wherein the interconnect structure comprises a second plurality of dielectric layers and metal lines and vias in the second plurality of dielectric layers;

forming a first surface dielectric layer over the interconnect structure; and

forming first bond pads in the first surface dielectric layer;

bonding a device die to the wafer, wherein a second surface dielectric layer of the device die is bonded to the first surface dielectric layer through Si—O bonds, and second bond pads of the device die are bonded to the first bond pads through metal-to-metal direct bonds;

attaching a supporting substrate, wherein the supporting substrate and the semiconductor substrate are on opposite sides of the device die;

polishing the semiconductor substrate to remove the semiconductor substrate of the wafer; and

performing a die-saw process to separate the interconnect structure and the supporting substrate into a plurality of packages.

15. The method of claim 14 further comprising:

encapsulating the device die in an encapsulant; and

forming conductive features physically contacting the interconnect structure, wherein the conductive features and the device die are on opposite sides of the interconnect structure.

16. The method of claim 14 further comprising:

attaching one of the plurality of packages to a dielectric buffer layer through a die-attach film, with the one of the plurality of packages comprising a piece of the supporting substrate;

encapsulating the one of the plurality of packages and the die-attach film in an additional encapsulating material; and

forming redistribution lines physically contacting the interconnect structure.

17. The method of claim 4 , wherein the interconnect structure and the supporting substrate in one of the plurality of packages are in the second encapsulating material.

18. The method of claim 1 , wherein an entirety of the interconnect structure is over the semiconductor substrate.

19. The method of claim 1 , wherein the attaching the supporting substrate comprises bonding the supporting substrate to the semiconductor substrate through fusion bonding.