Package and manufacturing method thereof
A manufacturing method of a package is provided. The method includes the following steps. A wafer substrate having first bonding pads is provided. A die is placed on the wafer substrate, wherein the die comprises second bonding pads bonded to the first bonding pads. The die is encapsulated by an etch stop layer and a first encapsulant. A redistribution structure is disposed over the die, the etch stop layer and the first encapsulant. A portion of the redistribution structure is removed to expose the first encapsulant. The first encapsulant is removed to expose the etch stop layer. A dielectric structure is disposed over the exposed etch stop layer and laterally encapsulates the die and the redistribution structure.
1 . A manufacturing method of a package, comprising:
providing a wafer substrate having first bonding pads;
placing a die on the wafer substrate, wherein the die comprises second bonding pads bonded to the first bonding pads;
encapsulating the die by an etch stop layer and a first encapsulant;
forming a redistribution structure over the die, the etch stop layer and the first encapsulant;
removing a portion of the redistribution structure to expose the first encapsulant;
removing the first encapsulant to expose the etch stop layer; and
forming a dielectric structure over the exposed etch stop layer and laterally encapsulating the die and the redistribution structure.
2 . The method of claim 1 , wherein the portion of the redistribution structure is removed by performing a dry etching process.
3 . The method of claim 1 , wherein the first encapsulant is removed by performing a wet etching process.
4 . The method of claim 1 , further comprising:
forming conductive pads over the redistribution structure; and
forming conductive terminals over the conductive pads.
5 . The method of claim 4 , wherein the dielectric structure comprises a passivation layer over the redistribution structure and the conductive pads, and in contact with the conductive terminals.
6 . The method of claim 5 , wherein the conductive pads are formed before the portion of the redistribution structure is removed.
7 . The method of claim 4 , wherein the dielectric structure comprises a second encapsulant, and a material of the second encapsulant is different from a material of the first encapsulant.
8 . The method of claim 7 , wherein the second encapsulant is formed by a molding process.
9 . The method of claim 7 , wherein the conductive pads are formed after the portion of the redistribution structure is removed.
10 . The method of claim 7 , further comprising:
forming a passivation layer over the second encapsulant, the redistribution structure and the conductive pads, and in contact with the conductive terminals.
11 . A manufacturing method of a package, comprising:
providing a wafer substrate;
bonding a die to the wafer substrate;
encapsulating the die by a first etch stop layer and a first encapsulant;
forming a redistribution structure over the die, the first etch stop layer and the first encapsulant, and electrically connected with the die;
performing a first etching process to partially remove the redistribution structure to form a first opening pattern exposing the first encapsulant;
performing a second etching process using the etched redistribution structure as an etching mask to remove the first encapsulant to form a second opening pattern exposing the first etch stop layer; and
forming a dielectric structure in the first opening pattern and the second opening pattern, and laterally encapsulate the die and the redistribution structure.
12 . The method of claim 11 , wherein the redistribution structure is form to comprise a second etch stop layer in contact with the first etch stop layer and the first encapsulant; and a dielectric layer on the second etch stop layer.
13 . The method of claim 12 , wherein the first etching process for forming the first opening pattern comprises:
a first etching step of partially removing the dielectric layer of the redistribution structure, while remaining the second etch stop layer intact; and
a second etching step of partially removing the second etch stop layer to form the first opening pattern.
14 . The method of claim 11 , wherein the second etching process for forming the second opening pattern comprises: completely removing the first encapsulant without the presence of residue, while remaining the first etch stop layer intact.
15 . The method of claim 11 , wherein a sidewall of the first opening pattern defined by the redistribution structure and an outer side surface of a vertical portion of the first etch stop layer on the die have an offset.
16 . The method of claim 11 , further comprising:
forming conductive pads over the redistribution structure;
forming a passivation layer over the dielectric structure, the redistribution structure and the conductive pads; and
forming conductive terminals over the conductive pads and the passivation layer.
17 . The method of claim 16 , further comprising:
performing a singulation process to cut through the passivation layer, the dielectric structure, the first etch stop layer and the wafer substrate.
18 . A manufacturing method of a package, comprising:
providing a wafer substrate;
bonding a die to the wafer substrate;
forming a etch stop layer and a first encapsulant laterally surrounding the die;
forming a redistribution structure over the etch stop layer and the first encapsulant, and electrically connected with the die;
forming a masking layer on the redistribution structure;
patterning the redistribution structure using the masking layer as a mask to expose the first encapsulant;
removing the first encapsulant to expose the etch stop layer; and
forming a dielectric structure over the exposed etch stop layer and laterally surrounding the die and the redistribution structure.
19 . The method of claim 18 , wherein the masking layer is removed before the dielectric structure is formed.
20 . The method of claim 18 , wherein the dielectric structure is formed to have a top surface substantially coplanar with a top surface of the redistribution structure.