Mixing organic materials into hybrid packages
A method includes forming an interposer, which includes a semiconductor substrate, and an interconnect structure over the semiconductor substrate. The method further includes bonding a device die to the interposer, so that a first metal pad in the interposer is bonded to a second metal pad in the device die, and a first surface dielectric layer in the interposer is bonded to a second surface dielectric layer in the device die. The method further includes encapsulating the device die in an encapsulating material, forming conductive features over and electrically coupling to the device die, and removing the semiconductor substrate. A part of the interposer, the device die, and portions of the conductive features in combination form a package.
1. A package comprising: a device package comprising:
an interposer comprising a first portion, and the first portion comprises a first edge;
a device die underlying and bonded to the interposer;
a first encapsulating material encapsulating the device die therein, wherein the first encapsulating material comprises a second portion overlapped by the first portion of the interposer, and wherein the second portion comprises a second edge flush with the first edge of the interposer;
a second encapsulating material encapsulating the device package therein; at least one dielectric layer overlapping the second encapsulating material and the device package, wherein a bottom surface of the at least one dielectric layer forms an interface with a topmost surface of the second encapsulating material, wherein the interface is a horizontal interface; and
conductive features in the at least one dielectric layer, wherein the conductive features are electrically coupled to the device die through the interposer.
2. The package of claim 1 , wherein a first metal pad in the interposer is bonded to a second metal pad in the device die, and a first surface dielectric layer in the interposer is bonded to a second surface dielectric layer in the device die.
3. The package of claim 1 further comprising a supporting substrate underlying a semiconductor substrate of the device die, wherein an entirety of the supporting substrate is a blank substrate formed of a homogeneous material.
4. The package of claim 3 further comprising an additional dielectric layer on the supporting substrate, wherein the additional dielectric layer is bonded to the semiconductor substrate of the device die through Si—O—Si bonds, and wherein the additional dielectric layer comprises a third edge underlying and flush with the first edge and the second edge.
5. The package of claim 4 , wherein the additional dielectric layer is in physical contact with, and is not bonded to, the first encapsulating material.
6. The package of claim 4 , wherein the additional dielectric layer comprises silicon oxide, and the first encapsulating material comprises a molding compound.
7. The package of claim 1 further comprising a polymer layer underlying and contacting the second encapsulating material.
8. The package of claim 7 further comprising an adhesive film over and contacting the polymer layer, wherein the adhesive film has edges flushed with edges of the device package.
9. A package comprising:
a supporting substrate, wherein the supporting substrate is free from conductive features therein;
a silicon oxide layer over and physically contacting the supporting substrate;
a device die over the silicon oxide layer, wherein the device die comprises a silicon substrate, and the silicon substrate is bonded to, and is in physical contact with, the silicon oxide layer, wherein Si—O—Si bonds are formed between the silicon substrate and the silicon oxide layer;
a first encapsulant encapsulating the device die therein; and
an interposer over and bonded with the device die.
10. The package of claim 9 , wherein the interposer comprises:
a semiconductor substrate; and
a through-via penetrating through the semiconductor substrate.
11. The package of claim 9 , wherein the supporting substrate comprises a blank substrate free from integrated circuits devices thereon.
12. The package of claim 9 , wherein the silicon oxide layer is in physical contact with the first encapsulant, with no bonds formed between the silicon oxide layer and the first encapsulant.
13. The package of claim 9 further comprising:
a second encapsulant encapsulating both of the device die and the interposer therein.
14. The package of claim 13 , wherein the second encapsulant further encapsulates the supporting substrate therein.
15. A package comprising:
an interposer;
a first device die and a second device die underlying and bonded to the interposer, wherein both of the first device die and the second device die are in physical contact with the interposer;
a supporting substrate underlying and bonded to the first device die and the second device die, respectively, wherein the supporting substrate is a blank substrate formed of a homogeneous material;
a first encapsulant encapsulating the first device die and the second device die; and
a second encapsulant encapsulating the interposer, the supporting substrate, and the first encapsulant therein.
16. The package of claim 15 further comprising a die-attach film underlying and adhering to the supporting substrate therein, wherein the die-attach film comprises edges flush with respective edges of the first encapsulant.
17. The package of claim 15 , wherein the supporting substrate is free from additional features formed of materials different from the homogeneous material.
18. The package of claim 15 , wherein a portion of the interposer overlaps a portion of the first encapsulant, with a first edge of the interposer over and flushing with a second edge of the first encapsulant.
19. The package of claim 15 , wherein the homogeneous material comprises silicon.
20. The package of claim 1 , wherein the second encapsulating material comprises a third edge contacting the second edge of the first encapsulating material to form a vertical interface, and a fourth edge, wherein the third edge and the fourth edge are opposing edges of the second encapsulating material, and wherein the fourth edge is parallel to the third edge.