Memory die temperature adjustment based on aging condition
A device includes a memory device and a controller. The memory device includes read/write circuitry and a plurality of memory dies. The controller is coupled to the memory device. The controller is configured to, responsive to determining that at least one storage element of a first die of the plurality of memory dies has a characteristic indicative of an aging condition, increase the temperature of the first die by performing memory operations on the first die until detecting a condition related to the temperature.
1. A device, comprising:
a memory device with at least two non-volatile storage elements, the memory device further comprising including read/write circuitry and a plurality of memory dies, wherein the read/write circuitry is configured to determine a number of pulses to change a state of one of the at least two non-volatile storage elements; and
a controller coupled to the memory device, the controller having a healing engine, wherein the controller is configured to, responsive to determining that at least one storage element of a first die of the plurality of memory dies has a characteristic indicative of an aging condition:
activate the healing engine to increase a temperature of the first die by performing memory operations on the first die until detecting a condition related to the temperature; and
determine whether the characteristic indicative of the aging condition is not present based on the condition related to the temperature.
2. The device according to claim 1 , wherein the at least two non-volatile storage elements are flash memory elements.
3. The device according to claim 2 , wherein the at least two non-volatile storage elements are NAND flash memory elements.
4. The device according to claim 1 , wherein the at least two non-volatile storage elements are ReRam memory elements.
5. The device according to claim 1 , wherein the pulses are program pulses.
6. The device according to claim 1 , wherein the pulses are erase pulses.
7. The device according to claim 1 , wherein performing the memory operations includes sending a request to the memory device to initiate a sequence of memory operations.
8. The device of claim 1 , wherein the read/write circuitry is configured to perform a plurality of read operations on the first die in response to receiving the request.
9. A device, comprising:
a memory device including read/write circuitry and a plurality of memory dies; and
a controller coupled to the memory device, the controller configured to, responsive to determining that at least one storage element of a first die of the plurality of memory dies has a characteristic indicative of an aging condition, increase the temperature of the first die by performing memory operations on the first die until detecting a condition related to the temperature and further configured to select a subset of the plurality of memory dies based on a pattern wherein performing the memory operations includes sending a plurality of read requests to the memory device, and wherein the read/write circuitry is configured to perform a read operation on the first die in response to receiving each read request of the plurality of read requests, wherein the at least one storage element is one of a flash memory elements, a NAND flash memory element and a ReRam memory element.
10. A device comprising:
a non-volatile memory device having at least a first storage element and a second storage element, the non-volatile memory device further comprising read/write circuitry and a plurality of memory dies; and
a controller coupled to the memory device, the controller configured to, responsive to determining that the first storage element of a first die of the memory dies has a characteristic indicative of an aging condition, increase a temperature of the first die by performing memory operations on the first die until detecting a condition related to the temperature and further configured to select a subset of the plurality of memory dies based on a pattern wherein the controller is further configured to determine that a first storage element of the plurality of storage elements has the characteristic indicative of the aging condition in response to determining that a number of program pulses to change a state of the first storage element is greater than a program threshold.
11. The device according to claim 10 , wherein the at least two non-volatile storage elements are flash memory elements.
12. The device according to claim 11 , wherein the at least two non-volatile storage elements are NAND flash memory elements.
13. The device according to claim 10 , wherein the at least two non-volatile storage elements are ReRam memory elements.
14. The device of claim 10 , wherein the controller is further configured to determine that a healing process is successful in response to determining that, subsequent to performing the memory operations, a second number of program pulses to change the state of the first storage element is less than the program threshold.
15. A method, comprising:
in a device including a controller and a memory device that includes a plurality of memory dies, performing:
determining that at least one storage element of a first die of the plurality of memory dies has a characteristic indicative of an aging condition;
selecting a subset of the plurality of memory dies based on a pattern; and
performing a plurality of memory operations on the subset of the plurality of memory dies through the use of the controller until detecting the characteristic indicative of the aging condition is not present.
16. The method according to claim 15 , wherein the performing the plurality of memory operations raises a temperature of the first die above a threshold.
17. The method of claim 16 , wherein performing the memory operations includes sending a plurality of read requests to the memory device.
18. The method of claim 16 , wherein performing the memory operations includes sending a request to the memory device to initiate a sequence of memory operations.
19. An apparatus, comprising:
non-volatile means for storing data within a device;
means for controlling the non-volatile means for storing data;
means for determining that at least one storage element of a first die of the plurality of memory dies has a characteristic indicative of an aging condition;
means for selecting a subset of the plurality of memory dies based on a pattern; and
means for performing a plurality of memory operations on the subset of the plurality of memory dies through the use of the controller until detecting the characteristic indicative of the aging condition is not present.
20. The apparatus of claim 19 , wherein the means for performing the memory operations includes means for sending a plurality of read requests to the memory device.
21. The method of claim 19 , wherein means for performing the memory operations includes means for sending a request to the memory device to initiate a sequence of memory operations.
22. A device, comprising:
a non-volatile memory device comprising a plurality of memory dies and storage elements and read/write circuitry; and
a controller coupled to the non-volatile memory device, the controller configured to:
control the non-volatile memory device to perform a memory operation to increase a temperature of at least one die of the plurality of memory dies,
detect a condition related to the temperature that indicates an aging of the plurality of the storage elements, and
when an aging of the plurality of storage elements exceeds a threshold value, trigger the performance of the memory operation to increase the temperature of the at least one die until detecting the characteristic indicative of the aging condition is not present.
23. The device according to claim 22 , wherein the memory operation is one of a read and a write operation.
24. The device of claim 22 , wherein the controller is further configured to determine that the temperature increase is successful to eliminate the detected condition of the aging the plurality of the storage elements.