Methods of forming and using materials containing silicon and nitrogen
Some embodiments include methods utilizing atomic layer deposition to form material containing silicon and nitrogen (e.g., silicon nitride). The atomic layer deposition uses SiI 4 as one precursor and uses a nitrogen-containing material as another precursor. Some embodiments include methods of forming a structure in which a chalcogenide region is formed over a semiconductor substrate; and in which SiI 4 is used as a precursor during formation of silicon nitride material directly against a surface of the chalcogenide region.
1. A method of forming a structure, comprising:
providing a semiconductor substrate;
forming a first conductive electrode over the substrate;
forming a chalcogenide material over the first conductive electrode, the chalcogenide material having exposed sidewalls;
forming a second conductive electrode over the chalcogenide material; and
performing atomic layer (ALD) deposition with SiI 4 and a t-butyl hydrazine to form silicon nitride directly against the exposed sidewalls of the chalcogenide, the atomic layer deposition being performed within a deposition chamber and comprising one or more iterations of a pulse sequence comprising:
flowing the SiI 4 into the deposition chamber;
flowing a first purge gas into the deposition chamber;
flowing the t-butyl hydrazine into the deposition chamber; and
flowing a second purge gas into the deposition chamber.
2. The method of claim 1 wherein the atomic layer deposition comprises a deposition sequence utilizing multiple iterations of the pulse sequence, and wherein all of the iterations use the same nitrogen-containing material as precursor.
3. The method of claim 1 wherein the atomic layer deposition comprises a deposition sequence utilizing multiple iterations, and wherein some of the iterations use different nitrogen-containing material as precursor than other iterations.
4. The method of claim 3 wherein t-butyl hydrazine is used as precursor in some iterations, and wherein NH 3 is used as precursor in other iterations.
5. The method of claim 1 wherein the first and second conductive electrodes differ in composition relative to one another.
6. The method of claim 1 wherein the first and second conductive electrodes are identical in composition relative to one another.
7. The method of claim 1 wherein the atomic layer deposition is conducted at temperature of less than or equal to about 250° C.
8. The method of claim 1 wherein the atomic layer deposition is conducted at temperature of less than or equal to about 175° C.
9. The method of claim 1 wherein the silicon nitride is additionally formed along sidewalls of the first and second conductive electrodes.
10. The method of claim 1 wherein the chalcogenide comprises at least one of arsenic, selenium and indium.
11. The method of claim 1 wherein the chalcogenide comprises at least one of indium, antimony and tellurium.
12. The method of claim 1 wherein the chalcogenide comprises at least one of germanium, antimony and tellurium.
13. The method of claim 1 wherein the silicon nitride is additionally formed along an upper surface of the second conductive electrode.
14. A method of forming a structure, comprising:
providing a base material having an upper surface comprising a chalcogenide material; and
performing atomic layer deposition onto the upper surface at a temperature of less than or equal to about 250° C. utilizing SiI 4 as one precursor and t-butyl hydrazine material as another precursor; the atomic layer deposition being performed within a deposition chamber and comprising one or more iterations of a pulse sequence comprising:
flowing the SiI 4 into the deposition chamber;
flowing a first purge gas into the deposition chamber;
flowing the t-butyl hydrazine into the deposition chamber; and
flowing a second purge gas into the deposition chamber.
15. The method of claim 14 wherein the atomic layer deposition deposits material consisting essentially of silicon nitride.
16. The method of claim 14 utilizing NH 3 as an additional precursor.