Semiconductor device and method for fabricating the same
A method for fabricating semiconductor device includes the steps of: forming a titanium nitride (TiN) layer on a silicon layer; performing a first treatment process by reacting the TiN layer with dichlorosilane (DCS) to form a titanium silicon nitride (TiSiN) layer; forming a conductive layer on the TiSiN layer; and patterning the conductive layer, the metal silicon nitride layer, and the silicon layer to form a gate structure.
1. A method for fabricating semiconductor device, comprising:
forming a titanium nitride (TiN) layer on a silicon layer;
performing a first treatment process by reacting the TiN layer with dichlorosilane (DCS) to form a titanium silicon nitride (TiSiN) layer;
forming a conductive layer on the TiSiN layer; and
patterning the conductive layer, the TiSiN layer, and the silicon layer to form a gate structure.
2. The method of claim 1 , wherein the silicon layer comprises amorphous silicon.
3. The method of claim 1 , further comprising:
forming a titanium (Ti) layer on the silicon layer; and
performing a second treatment process by reacting the Ti layer with ammonia (NH 3 ) to form the TiN layer.
4. The method of claim 3 , further comprising forming a metal silicide between the Ti layer and the silicon layer.
5. The method of claim 4 , wherein a thickness of the metal silicide is less than a thickness of the TiN layer.
6. The method of claim 4 , wherein a thickness of the metal silicide is less than a thickness of the TiSiN layer.
7. The method of claim 1 , wherein the gate structure comprises a gate insulating layer on the substrate.
8. A method for fabricating semiconductor device, comprising:
forming a titanium silicon nitride (TiSiN) layer on a silicon layer;
performing a first treatment process by reacting the TiSiN layer with ammonia (NH 3 ) to form a nitrogen-rich layer;
forming a conductive layer on the nitrogen-rich layer; and
patterning the conductive layer, the nitrogen-rich layer, and the silicon layer to form a gate structure.
9. The method of claim 8 , wherein the silicon layer comprises amorphous silicon.
10. The method of claim 8 , further comprising:
forming a titanium (Ti) layer on the silicon layer;
performing a second treatment process by reacting the Ti layer with ammonia (NH 3 ) to form a titanium nitride (TiN) layer; and
performing a third treatment process by reacting the TiN layer with dichlorosilane (DCS) to form the TiSiN layer.
11. The method of claim 10 , further comprising forming a metal silicide between the Ti layer and the silicon layer.
12. The method of claim 11 , wherein a thickness of the metal silicide is less than a thickness of the TiN layer.
13. The method of claim 11 , wherein a thickness of the metal silicide is less than a thickness of the TiSiN layer.
14. The method of claim 8 , wherein the gate structure comprises a gate insulating layer on the substrate.