Low-k feature formation processes and structures formed thereby
Embodiments of the present disclosure relate to a method of forming a low-k dielectric material, for example, a low-k gate spacer layer in a FinFET device. The low-k dielectric material may be formed using a precursor having a general chemical structure comprising at least one carbon atom bonded between two silicon atoms. A target k-value of the dielectric material may be achieved by controlling carbon concentration in the dielectric material.
1. A method comprising:
forming a low-k layer using an Atomic Layer Deposition (ALD) process, the ALD process comprising:
for a cycle, flowing a silicon-carbon source precursor having a chemical structure comprising at least one carbon atom bonded between two silicon atoms and wherein each chemical bond of the two silicon atoms that are not bonded to the at least one carbon atom is bonded to a halogen element, wherein the silicon-carbon source precursor further includes C(SiCl 2 ) 2 ; and
repeating the cycle a number of times.
2. The method of claim 1 , wherein the silicon-carbon source precursor includes a second chemical, the second chemical having a chemical structure of:
wherein n is in a range from 1 to 3, and Lg denotes the halogen element.
3. The method of claim 2 , wherein the halogen element is chlorine.
4. The method of claim 1 , wherein the silicon-carbon source precursor further includes Si 2 Cl 6 .
5. The method of claim 1 , wherein the silicon-carbon source precursor further includes one of (SiCl 3 ) 2 CH 2 , (SiCl 2 ) 2 (CH 2 ) 2 , (SiCl) 2 (CH 2 ) 3 , or a combination thereof.
6. The method of claim 1 , wherein the at least one carbon atom is further bonded to two hydrogen atoms.
7. The method of claim 1 , for a cycle, further comprising flowing an oxygen source precursor, wherein the oxygen source precursor includes steam (H 2 O).
8. The method of claim 1 , further comprising flowing pyridine (C 5 H 5 N) along with the silicon-carbon source precursor.
9. The method of claim 1 , wherein the ALD process does not include a precursor that includes nitrogen.
10. A method comprising:
forming a low-k layer using an Atomic Layer Deposition (ALD) process, the ALD process comprising:
for a cycle, flowing a silicon-carbon source precursor having a chemical structure comprising at least one carbon atom bonded between at least two silicon atoms and halogen atoms filling the bonds of each of the at least two silicon atoms that are not bonded to the at least one carbon atom, wherein the silicon-carbon source precursor further includes C(SiCl 2 ) 2 ;
flowing an oxygen source precursor, wherein a composition of the silicon-carbon source precursor or a ratio of the silicon-carbon source precursor to the oxygen source precursor in the cycle is selected to control a carbon concentration in the low-k layer; and
repeating the cycle a number of times.
11. The method of claim 10 , wherein the silicon-carbon source precursor includes a second chemical, the second chemical having the formula of:
(Lg) 4-n -Si—(CH 2 ) n —Si-(Lg) 4 ,
wherein n is in a range from 1 to 3, and Lg denotes a halogen element.
12. The method of claim 11 , wherein the halogen element is chlorine.
13. The method of claim 10 , wherein the silicon-carbon source precursor includes one of (SiCl 3 ) 2 CH 2 , (SiCl 2 ) 2 (CH 2 ) 2 , (SiCl) 2 (CH 2 ) 3 , or a combination thereof.
14. The method of claim 13 , wherein the silicon-carbon source precursor includes (SiCl 3 ) 2 CH 2 .
15. The method of claim 14 , further comprising adding (SiCl 2 ) 2 (CH 2 ) 2 or (SiCl) 2 (CH 2 ) 3 to (SiCl 3 ) 2 CH 2 to increase carbon concentration and lower k-value in the low-k layer.
16. The method of claim 14 , further comprising adding a silicon compound without carbon to (SiCl 3 ) 2 CH 2 to reduce carbon concentration and increase k-value in the low-k layer.
17. A structure comprising:
an active area on a substrate, the active area comprising a source/drain region;
a gate structure over the active area; and
a gate spacer along a sidewall of the gate structure, the gate spacer being disposed laterally between the gate structure and the source/drain region, the gate spacer comprising:
a low-k layer having a carbon concentration in a range from greater than 0 atomic percent (at. %) to 30 at. % and a nitrogen concentration from 0 at. % to 3 at. %, and wherein the low-k layer has a density of between 10 g/cm 3 to 3.0 g/cm 3 .
18. The structure of claim 17 , wherein the low-k layer has a concentration of carbon that increases away from the gate structure.
19. The structure of claim 17 , wherein the low-k layer is a silicon oxycarbide (SiOC) film having a k-value lower than 40.0.
20. The method of claim 1 , wherein the low-k layer has a carbon concentration in a range from greater than 0 atomic percent (at. %) to 30 at. % and a nitrogen concentration from 0 at. % to 3 at. %, and wherein the low-k layer has a density of between 1.0 g/cm 3 to 3.0 g/cm 3 .