Seal ring for hybrid-bond

1. A structure comprising:

a first die, the first die comprising:

a first oxide bonding layer having a first plurality of bond pads disposed therein, and

a first seal ring disposed in the first oxide bonding layer, wherein the first oxide bonding layer extends over the first seal ring; and

a second die, the second die comprising:

a second oxide bonding layer having a second plurality of bond pads disposed therein, wherein the first plurality of bond pads is bonded to the second plurality of bond pads, wherein the first oxide bonding layer is bonded to the second oxide bonding layer, and wherein an area interposed between the first seal ring and the second oxide bonding layer is free of bond pads.

2. The structure of claim 1 , wherein the first plurality of bond pads is directly bonded to the second plurality of bond pads in a metal-to-metal bond which is free of a eutectic material, and wherein the first oxide bonding layer is fusion bonded to the second oxide bonding layer.

3. The structure of claim 1 , wherein the second oxide bonding layer extends over a second seal ring, and an area directly aligned with the second seal ring is free of the second plurality of bond pads.

4. The structure of claim 3 , wherein the first seal ring along a first edge of the first die and the second seal ring along a first edge of the second die are aligned.

5. The structure of claim 4 , wherein the first seal ring along a second edge of the first die and the second seal ring are along a second edge of the second die are offset.

6. The structure of claim 1 , wherein each edge of the first die is offset from each respective edge of the second die.

7. The structure of claim 1 , wherein the first die further comprises a semiconductor substrate and an interconnect disposed on the semiconductor substrate, wherein the first seal ring comprises a first portion in the interconnect coupled to the substrate, and a second portion embedded in the first oxide bonding layer coupled to the first portion.

8. The structure of claim 7 , wherein a passivation layer is interposed between the first oxide bonding layer and the semiconductor substrate, wherein the first portion of the first seal ring is coupled to the second portion of the first seal ring by a third portion of the first seal ring, the third portion of the first seal ring extending through the passivation layer.

9. A method, comprising:

determining an alignment of a first die to a second die by aligning active bond pads of the first die to corresponding active bond pads of the second die, wherein a first area of the first die and a second area of the second die are aligned with a seal ring of the second die;

removing all bond pads in the first area of the first die;

removing all bond pads in the second area of the second die; and

bonding the first die to the second die according to the alignment.

10. The method of claim 9 , wherein the bonding comprises:

fusion bonding the first area of the first die to the second area of the second die, wherein an interface of the first area and the second area is free of metal features.

11. The method of claim 9 , further comprising:

forming first bond pads on the first die, the first bond pads including the active bond pads of the first die and dummy bond pads of the first die; and

forming second bond pads on the second die, the second bond pads including the active bond pads of the second die and dummy bond pads of the second die.

12. The method of claim 11 , wherein the first bond pads of the first die are formed in a pattern and wherein a width of the first area of the first die is greater than a pitch spacing of the first bond pads of the first die.

13. The method of claim 9 , wherein the second area of the second die extends around a periphery of the second die.

14. The method of claim 13 , wherein the first area of the first die corresponds to the second area of the second die, the method further comprising, forming one or more bond pads outside the first area of the first die.

15. The method of claim 9 , wherein the determining the alignment further comprises aligning the seal ring of the second die with a portion of a seal ring of the first die.

16. The method of claim 9 , further comprising:

forming a ring-like bonding interface over and coupled to the seal ring of the second die.

17. A method comprising:

determining a first device layout of bond pads disposed at a surface of a first device;

determining a second device layout of bond pads disposed at a surface of a second device, the second device having a seal ring;

determining an alignment which aligns a first active bond pad of the first device to a second active bond pad of the second device, wherein the alignment causes the seal ring to align with a first region of the first die;

removing first bond pads in the first region from the first device layout of bond pads;

removing second bond pads in a second region of the second device, wherein the second bond pads align with the first bond pads according to the alignment;

bonding the first active bond pad to the second active bond pad; and

bonding the first region to the second region.

18. The method of claim 17 , wherein an interface of the first region and the second region is substantially free of metal features.

19. The method of claim 17 , further comprising:

forming a first ring metal in the first region;

forming a second ring metal in the second region; and

bonding the first ring metal to the second ring metal.

20. The method of claim 19 , further comprising:

coupling the second ring metal to the seal ring.