Temperature variation compensation
A data storage device includes a non-volatile memory and a controller coupled to the non-volatile memory. The controller is operable to measure a first threshold voltage (Vt) of a memory cell under a first parameter at a read temperature and measure a second Vt of the memory cell under a second parameter at the read temperature in which the first parameter is different from the second parameter. A Vt correction term for the memory cell is determined based upon the first Vt measurement and the second Vt measurement. A read Vt of the memory cell is adjusted by using the Vt correction term.
1. A data storage device comprising:
a non-volatile memory;
a controller coupled to the non-volatile memory, the controller operable to:
measure a first threshold voltage of a memory cell under a first parameter at a read temperature;
measure a second threshold voltage of the memory cell under a second parameter at the read temperature, wherein the first parameter is different from the second parameter;
determine a threshold voltage correction term for the memory cell based upon the first threshold voltage measurement and the second threshold voltage measurement; and
adjust a read threshold voltage of the memory cell by using the threshold voltage correction term.
2. The data storage device of claim 1 , wherein the first parameter of measuring the first threshold voltage is a default read parameter.
3. The data storage device of claim 1 , wherein the first parameter and the second parameter are different than a default read parameter, the controller further operable to measure a third threshold voltage of the memory cell under the default read parameter at the read temperature.
4. The data storage device of claim 1 , wherein the read threshold voltage of the memory cell is measured under a default read parameter at the read temperature.
5. The data storage device of claim 1 , wherein the threshold voltage correction term is retrieved from a look-up table.
6. The data storage device of claim 1 , wherein the measured first threshold voltage and the measured second threshold voltage serve as a proxy.
7. The data storage device of claim 6 , wherein the threshold voltage correction term is retrieved from a look-up table, the look-up table correlating the proxy to the threshold voltage correction term.
8. The data storage device of claim 7 , wherein the threshold voltage correction term is determined by measurements of one or more proxies at a temperature proximate the read temperature and by measurements of an actual temperature coefficient at the temperature proximate the read temperature.
9. The data storage device of claim 7 , wherein the threshold voltage correction term are determined by measurements of one or more proxies at a temperature different than the read temperature and by measurements of the actual temperature coefficient at a temperature different than the read temperature.
10. The data storage device of claim 7 , wherein the look-up table is stored in a non-volatile memory of the controller.
11. A method of accessing data from a data storage device, comprising:
measuring a first plurality of threshold voltages of a page of memory cells under a first parameter at a read temperature, the first parameter comprising a first bit line voltage and a first sense amplifier integration time;
measuring a second plurality of threshold voltages of the page of memory cell under a second parameter at the read temperature, the second parameter comprising a second bit line voltage and a second sense amplifier integration time;
retrieving a threshold voltage correction term for each memory cell of the page of memory cells based upon the measured threshold voltages under the first parameter and upon the measured threshold voltages under the second parameter; and
adjusting a read threshold voltage for each memory cell of the page of memory cells by using the threshold voltage correction term.
12. The method of claim 11 , wherein the first parameter of measuring the first threshold voltage is a default read parameter.
13. The method of claim 11 , wherein the first parameter and the second parameter are different than a default read parameter, the method further comprising measuring a third threshold voltage of the memory cell under the default read parameter.
14. The method of claim 11 , wherein the read threshold voltage of the memory cell is measured under a default read parameter at the read temperature.
15. The method of claim 11 , wherein the first bit line voltage and the second bit line voltage are different.
16. The method of claim 11 , wherein the first sense amplifier integration time and the second sense amplifier integration time are different.
17. The method of claim 11 , wherein the first bit line voltage and the second bit line voltage are different and wherein the first sense amplifier integration time and the second sense amplifier integration time are different.
18. The method of claim 11 , wherein the threshold voltage correction term is retrieved from a look-up table.
19. A data storage device comprising:
a non-volatile memory; and
a cell voltage distribution mitigating means for adjusting a threshold voltage of a memory cell of the non-volatile memory, the cell voltage distribution mitigation means operable to measure the threshold voltage of the memory cell at two different read parameters at a read temperature, the cell voltage distribution mitigation means further operable to retrieve from a look-up table a threshold voltage correction term correlated to the measured threshold voltage at two different read parameters, wherein the look-up table is stored in the cell voltage distribution mitigating means, the cell voltage distribution mitigation means further operable to adjust the threshold voltage of the memory cell after detecting uncorrectable decoding of the memory cell.
20. The data storage device of claim 19 , wherein the cell voltage distribution mitigation means are further operable to adjust a read threshold voltage using the threshold voltage correction term.