Photolithography methods and structures that reduce stochastic defects
Disclosed are embodiments of a multi-layer stack and photolithography methods and systems that employ such a stack. The disclosed multi-layer stacks include a photoresist layer on an underlayer. The photoresist layer and underlayer are made of different materials, which are selected so that valence and conduction band offsets between the underlayer and photoresist layer create an effective electric field (i.e., so that the stack is “self-biased”). When areas of the photoresist layer are exposed to radiation during photolithography and the radiation passes through photoresist layer and excites electrons in the underlayer, this effective electric field facilitates movement of the radiation-excited electrons from the underlayer into the radiation-exposed areas of the photoresist layer in a direction normal to the interface between the underlayer and the photoresist layer. Movement of the radiation-excited electrons from the underlayer into the radiation-exposed areas of the photoresist layer improves photoresist layer development and pattern resolution.
1. A structure comprising:
an underlayer on a substrate; and
a photoresist layer on the underlayer,
wherein the photoresist layer comprises: radiation-exposed areas; and non-radiation exposed areas,
wherein portions of the underlayer aligned below the radiation-exposed areas of the photoresist layer comprise radiation-excited electrons and radiation-excited holes,
wherein the underlayer and the photoresist layer comprise different materials that create an effective electric field between the underlayer and the photoresist layer, and
wherein the effective electric field facilitates movement of the radiation-excited electrons from the underlayer into the radiation-exposed areas of the photoresist layer and impedes movement of the radiation-excited holes from the underlayer into the photoresist layer.
2. The structure of claim 1 , wherein the effective electric field is created due to valence and conduction band offsets between the underlayer and the photoresist layer and wherein the offsets comprise:
a maximum valence band energy of the underlayer that is higher than a highest occupied molecular orbital (HOMO) energy of the photoresist layer such that a difference between the maximum valence band energy of the underlayer and the highest occupied orbital (HOMO) energy of the photoresist layer is greater than 0.0 eV; and
a minimum conduction band energy of the underlayer that is higher than a lowest unoccupied molecular orbital (LUMO) energy of the photoresist layer such that a difference between the minimum conduction band energy of the underlayer and the lowest unoccupied molecular orbital (LUMO) energy of the photoresist layer is greater than 0.0 eV.
3. The structure of claim 1 , wherein the underlayer has an extreme ultraviolet radiation extinction coefficient of at least 0.02.
4. The structure of claim 1 , wherein the underlayer comprises any of indium(III) oxide, nickel(II) oxide, zinc oxide, copper(I) oxide, cobalt (III) oxide, hafnium(IV) oxide, and chromium (III) oxide.
5. The structure of claim 1 , wherein the underlayer comprises is a p-type underlayer and the photoresist layer comprises an n-type photoresist layer.
6. The structure of claim 1 , further comprising an interface layer between the photoresist layer and the underlayer.
7. A structure comprising:
an underlayer on a substrate;
an interface layer on the underlayer, wherein the interface layer comprises a self-assembled mono-layer material; and
a photoresist layer on the interface layer,
wherein the photoresist layer comprises: radiation-exposed areas; and non-radiation exposed areas,
wherein portions of the underlayer aligned below the radiation-exposed areas of the photoresist layer comprise radiation-excited electrons and radiation-excited holes,
wherein the underlayer and the photoresist layer comprise different materials that create an effective electric field between the underlayer and the photoresist layer, and
wherein the effective electric field facilitates movement of the radiation-excited electrons from the underlayer into the radiation-exposed areas of the photoresist layer and impedes movement of the radiation-excited holes from the underlayer into the photoresist layer.
8. The structure of claim 7 , wherein the self-assembled mono-layer material comprises hexamethyldisilazane.
9. The structure of claim 7 , wherein the self-assembled mono-layer material enhances adhesion of the photoresist layer to the underlayer.
10. The structure of claim 7 , wherein the self-assembled mono-layer material further facilitates movement of the facilitates movement of the radiation-excited electrons from the underlayer into the radiation-exposed areas of the photoresist layer.
11. The structure of claim 7 , wherein the effective electric field is created due to valence and conduction band offsets between the underlayer and the photoresist layer and wherein the offsets comprise:
a maximum valence band energy of the underlayer that is higher than a highest occupied molecular orbital (HOMO) energy of the photoresist layer such that a difference between the maximum valence band energy of the underlayer and the highest occupied orbital (HOMO) energy of the photoresist layer is greater than 0.0 eV; and
a minimum conduction band energy of the underlayer that is higher than a lowest unoccupied molecular orbital (LUMO) energy of the photoresist layer such that a difference between the minimum conduction band energy of the underlayer and the lowest unoccupied molecular orbital (LUMO) energy of the photoresist layer is greater than 0.0 eV.
12. The structure of claim 7 , wherein the underlayer has an extreme ultraviolet radiation extinction coefficient of at least 0.02.
13. The structure of claim 7 , wherein the underlayer comprises any of indium(III) oxide, nickel(II) oxide, zinc oxide, copper(I) oxide, cobalt (III) oxide, hafnium(IV) oxide, and chromium (III) oxide.
14. The structure of claim 7 , wherein the underlayer comprises is a p-type underlayer and the photoresist layer comprises an n-type photoresist layer.
15. A structure comprising:
a p-type underlayer on a substrate; and
an n-type photoresist layer immediately adjacent to the underlayer such that a p-n junction is at an interface between the p-type underlayer and the n-type photoresist layer,
wherein then-type photoresist layer comprises: radiation-exposed areas; and non-radiation exposed areas,
wherein portions of the p-type underlayer aligned below the radiation-exposed areas of the n-type photoresist layer comprise radiation-excited electrons and radiation-excited holes,
wherein the p-type underlayer and the n-type photoresist layer comprise different materials that create an electric field between the underlayer and the photoresist layer, and
wherein the electric field facilitates movement of the radiation-excited electrons from the p-type underlayer into the radiation-exposed areas of the n-type photoresist layer and impedes movement of the radiation-excited holes from the p-type underlayer into the n-type photoresist layer.
16. The structure of claim 15 , wherein the n-type photoresist layer comprises any of the following:
a chemically amplified positive organic photoresist layer doped so as to have n-type conductivity;
a chemically amplified negative organic photoresist layer; and
a non-chemically amplified photoresist layer having a naturally occurring n-type conductivity.