Fan-out semiconductor package

1. A semiconductor package comprising:

a first interconnection member having a through-hole;

a semiconductor chip disposed in the through-hole and having an active surface having connection pads disposed thereon and an inactive surface opposing the active surface;

a second interconnection member including an insulating layer disposed on the first interconnection member and the active surface of the semiconductor chip and a redistribution layer disposed on the insulating layer and electrically connected to the connection pads; and

an encapsulant encapsulating at least portions of the first interconnection member and the inactive surface of the semiconductor chip,

wherein the first interconnection member includes a first insulating layer in contact with the insulating layer of the second interconnection member, a first redistribution layer disposed on a surface of the first insulating layer in contact with the insulating layer of the second interconnection member and electrically connected to the connection pads, and a blocking layer disposed on the surface of the first insulating layer on which the first redistribution layer is disposed and completely surrounding the through-hole, and

the blocking layer separates the encapsulant from a portion of the insulating layer of the second interconnection member that is in contact with the first insulating layer or the first redistribution layer of the first interconnection member.

2. The semiconductor package of claim 1 , wherein the blocking layer completely surrounds the through-hole.

3. The semiconductor package of claim 1 , wherein the blocking layer is in contact with the encapsulant and the portion of the insulating layer of the second interconnection member that is in contact with the first insulating layer or the first redistribution layer of the first interconnection member, and

a lower surface of the blocking layer is in contact with the second interconnection member.

4. The semiconductor package of claim 1 , wherein an interface between the blocking layer and the second interconnection member is disposed on a level different from that of at least one of an interface between the first redistribution layer and the second interconnection member and an interface between the first insulating layer and the second interconnection member.

5. The semiconductor package of claim 1 , wherein one surface of the first interconnection member in contact with the second interconnection member includes a first region surrounding the through-hole and a second region surrounding the first region,

the blocking layer of the first interconnection member is disposed in the first region, and

the first redistribution layer of the first interconnection member is disposed in the second region.

6. The semiconductor package of claim 5 , wherein the blocking layer is a portion of the first insulating layer of the first interconnection member, and

the first redistribution layer of the first interconnection member is disposed on a recessed portion of the first insulating layer with respect to the blocking layer.

7. The semiconductor package of claim 5 , wherein the blocking layer is a plating layer formed on the first insulating layer of the first interconnection member, and

the first redistribution layer of the first interconnection member is disposed on the same level as that of the blocking layer.

8. The semiconductor package of claim 7 , wherein the plating layer has a thickness equal to or greater than that of the first redistribution layer of the first interconnection member.

9. The semiconductor package of claim 1 , wherein the first interconnection member includes the first insulating layer, the first redistribution layer in contact with the second interconnection member and embedded in the first insulating layer, and a second redistribution layer disposed on the other surface of the first insulating layer opposing one surface of the first insulating layer in which the first redistribution layer is embedded.

10. The semiconductor package of claim 9 , wherein the first interconnection member further includes a second insulating layer disposed on the first insulating layer and covering the second redistribution layer and a third redistribution layer disposed on the second insulating layer.

11. The fan-out semiconductor package of claim 10 , wherein the second redistribution layer is disposed on a level between the active surface and the inactive surface of the semiconductor chip.

12. The semiconductor package of claim 9 , wherein a distance between the redistribution layer of the second interconnection member and the first redistribution layer is greater than that between the redistribution layer of the second interconnection member and each of the connection pads.

13. The semiconductor package of claim 9 , wherein a lower surface of the first redistribution layer is disposed on a level above a lower surface of each of the connection pads.

14. The semiconductor package of claim 1 , wherein the first interconnection member includes a second insulating layer, a second redistribution layer and a third redistribution layer disposed on opposite surfaces of the second insulating layer, respectively, the first insulating layer disposed on the second insulating layer and covering the second redistribution layer, and the first redistribution layer disposed on the first insulating layer.

15. The semiconductor package of claim 14 , wherein the first interconnection member further includes a third insulating layer disposed on the second insulating layer and covering the third redistribution layer and a fourth redistribution layer disposed on the third insulating layer.

16. The fan-out semiconductor package of claim 14 , wherein the second insulating layer has a thickness greater than that of the first insulating layer.

17. The semiconductor package of claim 14 , wherein the second redistribution layer is disposed on a level between the active surface and the inactive surface of the semiconductor chip.

18. The semiconductor package of claim 14 , wherein a lower surface of the first redistribution layer is disposed on a level below a lower surface of each of the connection pads.

19. A semiconductor package comprising:

a first interconnection member having a through-hole;

a semiconductor chip disposed in the through-hole and having an active surface having connection pads disposed thereon and an inactive surface opposing the active surface;

a second interconnection member disposed on the first interconnection member and the active surface of the semiconductor chip and including a redistribution layer electrically connected to the connection pads; and

an encapsulant encapsulating at least portions of the first interconnection member and the inactive surface of the semiconductor chip,

wherein the first interconnection member includes a first insulating layer in contact with the second interconnection member, a first redistribution layer disposed on a surface of the first insulating layer in contact with the second interconnection member and electrically connected to the connection pads, and a blocking layer disposed on the surface of the first insulating layer on which the first redistribution layer is disposed and surrounding the through-hole, and

the blocking layer is closer to the through-hole than to the first redistribution layer of the first interconnection member.

20. A semiconductor package comprising:

a first interconnection member having a through-hole;

a semiconductor chip disposed in the through-hole and having an active surface having connection pads disposed thereon and an inactive surface opposing the active surface;

a second interconnection member disposed on the first interconnection member and the active surface of the semiconductor chip and including a redistribution layer electrically connected to the connection pads; and

an encapsulant encapsulating at least portions of the first interconnection member and the inactive surface of the semiconductor chip,

wherein the first interconnection member includes a first insulating layer in contact with the second interconnection member, a first redistribution layer disposed on a surface of the first insulating layer in contact with the second interconnection member and electrically connected to the connection pads, and a blocking layer disposed on the surface of the first insulating layer on which the first redistribution layer is disposed and completely surrounding the through-hole, and

the encapsulant does not contact the surface of the first insulating layer on which the first redistribution layer is disposed.