Integrated assemblies having thicker semiconductor material along one region of a conductive structure than along another region
View Patent ↗Some embodiments include an integrated assembly having a conductive structure which includes a semiconductor material over a metal-containing material. A stack of alternating conductive levels and insulative levels is over the conductive structure. A partition extends through the stack. The partition has wall regions, and has corner regions where two or more wall regions meet. The conductive structure includes a first portion which extends directly under the corner regions, and includes a second portion which is directly under the wall regions and is not directly under the corner regions. The first portion has a first thickness of the semiconductor material and the second portion has a second thickness of the semiconductor material. The first thickness is greater than the second thickness. Some embodiments include methods of forming integrated assemblies.
1. An integrated assembly, comprising:
a conductive structure comprising a semiconductor material over a metal-containing material;
a stack of alternating conductive levels and insulative levels over the conductive structure;
a partition extending through the stack and directly contacting a top of the conductive structure; the partition comprising wall regions, and comprising corner regions where two or more wall regions meet; and
the conductive structure comprising a first portion which extends directly under the corner regions, and comprising a second portion which is directly under the wall regions and is not directly under the corner regions; the first portion comprising a first thickness of the semiconductor material and the second portion comprising a second thickness of the semiconductor material; the first thickness being greater than the second thickness.
2. The integrated assembly of claim 1 wherein the first portion of the conductive structure only comprises the semiconductor material.
3. The integrated assembly of claim 1 wherein the semiconductor material comprises conductively-doped silicon.
4. The integrated assembly of claim 1 wherein the partition only comprises insulative material.
5. The integrated assembly of claim 1 wherein the partition comprises insulative panels on opposing sides of a conductive core.
6. The integrated assembly of claim 1 comprising cavities extending into the first portion; at least one of the cavities being deeper than the second thickness.
7. The integrated assembly of claim 1 wherein the semiconductor material is directly against the metal-containing material.