IP Library Granted Patent US 10,177,184
Granted Patent B2
US 10,177,184 · App. 16/031,345 · Granted Jan 8, 2019

Solid-state imaging device, method of manufacturing solid-state imaging device, and electronic apparatus

Inventor: Hiroaki Ishiwata (Tokyo, JP)
Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
H01L27/14612H01L27/14603H01L27/14605H01L27/14621H01L27/14627H01L27/14641H01L27/14645H01L27/14685H04N5/2253H04N5/2254H04N5/347H04N5/357H04N5/3696H04N5/3745H04N5/37457H04N9/045
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Quick Facts
Patent No.
US 10,177,184
App. No.
16/031,345
Granted
Jan 8, 2019
Kind
B2
Abstract

A solid-state imaging device including an imaging area where a plurality of unit pixels are disposed to capture a color image, wherein each of the unit pixels includes: a plurality of photoelectric conversion portions; a plurality of transfer gates, each of which is disposed in each of the photoelectric conversion portions to transfer signal charges from the photoelectric conversion portion; and a floating diffusion to which the signal charges are transferred from the plurality of the photoelectric conversion portions by the plurality of the transfer gates, wherein the plurality of the photoelectric conversion portions receive light of the same color to generate the signal charges, and wherein the signal charges transferred from the plurality of the photoelectric conversion portions to the floating diffusion are added to be output as an electrical signal.

Claims (35)

1. An imaging device comprising a plurality of unit pixels, wherein a unit pixel comprises:

a first photoelectric conversion element;

a second photoelectric conversion element;

a floating diffusion electrically connected to the first and second photoelectric conversion elements;

a first amplification transistor;

a second amplification transistor;

a first selection transistor; and

a second selection transistor,

wherein,

the floating diffusion is electrically connected to gates of the first and second amplification transistors.

2. The imaging device according to claim 1 , wherein the first amplification transistor is electrically connected to a signal line via the first selection transistor and the second amplification transistor is electrically connected to the signal line via the second selection transistor.

3. The imaging device according to claim 1 , wherein:

the unit pixel further comprises (a) a third photoelectric conversion element, and (b) a fourth photoelectric conversion element; and

the floating diffusion is electrically connected to the third and fourth photoelectric conversion elements.

4. The imaging device according to claim 3 , wherein the first, second, third, and fourth photoelectric conversion elements are arranged in a 2×2 matrix in a plan view.

5. The imaging device according to claim 3 , wherein the unit pixel further comprises:

a first transfer transistor;

a second transfer transistor;

a third transfer transistor; and

a fourth transfer transistor,

wherein,

the floating diffusion is electrically connected to the first, second, third, and fourth photoelectric conversion elements via the first, second, third, and fourth transfer transistors, respectively.

6. The imaging device according to claim 5 , wherein the first, second, third, and fourth transfer transistors comprise first, second, third, and fourth gates, respectively, which first, second, third, and fourth gates are positioned about the floating diffusion in a plan view.

7. The imaging device according to claim 5 , further comprising a semiconductor substrate, wherein:

the first, second, third, and fourth photoelectric conversion elements are disposed in the semiconductor substrate; and

in a cross-sectional view, a part of each of the first, second, third, and fourth transfer transistors is disposed in the semiconductor substrate in a cross-sectional view.

8. The imaging device according to claim 1 , wherein the first photoelectric conversion element and the second photoelectric conversion element are configured to receive light of a same color.

9. The imaging device according to claim 1 , wherein the unit pixel further comprises a plurality of microlenses each of which focuses light on a respective photoelectric conversion element.

10. The imaging device according to claim 1 , wherein the unit pixel further comprises a reset transistor.

11. The imaging device according to claim 10 , wherein the first amplification transistor is disposed between the first selection transistor and the reset transistor in a plan view.

12. An electronic apparatus including:

an optical system;

a controller;

a signal processing circuit; and

an imaging device according to claim 1 .

Priority Claims (1)
JP 2010-107265 · May 7, 2010 · national
Continuity (6)
Continuation 15894542 · Feb 12, 2018
Continuation 15465084 · Mar 21, 2017
Continuation 15156564 · May 17, 2016
Continuation 14495318 · Sep 24, 2014
Continuation 13085676 · Apr 13, 2011
Related Publication 20180323230A1 · Nov 8, 2018