IP Library Granted Patent US 10,839,886
Granted Patent B2
US 10,839,886 · App. 16/035,521 · Granted Nov 17, 2020

Method and apparatus for adaptive data retention management in non-volatile memory

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Quick Facts
Patent No.
US 10,839,886
App. No.
16/035,521
Granted
Nov 17, 2020
Kind
B2
Abstract

Aspects of the disclosure provide systems and methods for adaptive data retention management in non-volatile memory. A solid state device (SSD) includes non-volatile memory (NVM) for storing data. The SSD is configured to determine a temperature of the NVM. If the temperature of the NVM is below a predetermined temperature, the SSD maintains a data retention refresh rate of the data stored in the NVM. If the temperature of the NVM is equal to or above the predetermined temperature, the SSD adjusts the data retention refresh rate at a first rate and then a second rate, each adjustment based on the temperature of the NVM. The first rate and the second rate are different, for example, the second rate is less than the first rate.

Claims (73)

1. A method of operating a solid state device (SSD) comprising non-volatile memory (NVM), the method comprising:

storing data in the NVM;

determining a temperature of the NVM;

if the temperature of the NVM is less than a predetermined temperature, maintaining a data retention refresh rate of the data stored in the NVM; and

if the temperature of the NVM is equal to or greater than the predetermined temperature, adjusting the data retention refresh rate such that:

when the temperature of the NVM is equal to or greater than the predetermined temperature and in a first temperature range from T 0 to T 1 , increasing the data retention refresh rate at a first rate;

when the temperature of the NVM is equal to or greater than the predetermined temperature and in a second temperature range from T 1 to T 2 , maintaining the data retention refresh rate over a temperature range greater than 4 degrees and within the second temperature range; and

when the temperature of the NVM is equal to or greater than the predetermined temperature and in a third temperature range from T 2 to T 3 , increasing the data retention refresh rate of the NVM at a third rate,

wherein T 0 <T 1 <T 2 <T 3 .

2. The method of claim 1 , wherein the adjusting the data retention refresh rate comprises:

increasing the data retention refresh rate of the NVM at a second rate that is less than the first rate, over a temperature range in the second temperature range.

3. The method of claim 2 , wherein

the third rate greater than the second rate.

4. The method of claim 3 , wherein the first rate is substantially equal to the third rate.

5. The method of claim 3 , wherein the data retention refresh rate of the NVM in the first temperature range is less than the data retention refresh rate of the NVM in the second temperature range.

6. The method of claim 5 , wherein the data retention refresh rate of the NVM in the second temperature range is less than the data retention refresh rate of the NVM in the third temperature range.

7. The method of claim 3 ,

wherein the increasing the data retention refresh rate of the NVM at the first rate, comprises increasing the data retention refresh rate according to an Arrhenius curve; and

wherein the increasing the data retention refresh rate of the NVM at the third rate, comprises increasing the data retention refresh rate according to the Arrhenius curve.

8. The method of claim 3 ,

wherein the increasing the data retention refresh rate of the NVM at the first rate, comprises increasing the data retention refresh rate at the first rate to meet a performance specification of the SSD, and

wherein the increasing the data retention refresh rate of the NVM at the third rate, comprises increasing the data retention refresh rate at the third rate that is different from the first rate to meet a reliability specification of the SSD.

9. A solid state device (SSD) comprising:

a non-volatile memory (NVM);

a sensor configured to determine a temperature of the NVM; and

a controller operatively coupled to the NVM and the sensor;

wherein the controller is configured to:

store data in the NVM;

determine the temperature of the NVM;

if the temperature of the NVM is less than a predetermined temperature, maintain a data retention refresh rate of the NVM; and

if the temperature of the NVM is equal to or greater than the predetermined temperature, adjust the data retention refresh rate such that:

when the temperature of the NVM is equal to or greater than the predetermined temperature and in a first temperature range from T 0 to T 1 , increasing the data retention refresh rate at a first rate;

when the temperature of the NVM is equal to or greater than the predetermined temperature and in a second temperature range from T 1 to T 2 , maintaining the data retention refresh rate over a temperature range greater than 4 degrees and within the second temperature range; and

when the temperature of the NVM is equal to or greater than the predetermined temperature and in a third temperature range from T 2 to T 3 , increasing the data retention refresh rate of the NVM at a third rate,

wherein T 0 <T 1 <T 2 <T 3 .

10. The SSD of claim 9 , wherein the controller is further configured to:

increase the data retention refresh rate at a second rate that is less than the first rate, over a temperature range in the second temperature range.

11. The SSD of claim 10 , wherein

the third rate is greater than the second rate.

12. The SSD of claim 11 , wherein the first rate is substantially equal to the third rate.

13. The SSD of claim 11 , wherein the controller is further configured to:

in the first temperature range, increase the data retention refresh rate according to an Arrhenius curve to meet a performance specification of the SSD.

14. The SSD of claim 13 , wherein the controller is further configured to:

in the third temperature range, increase the data retention refresh rate according to the Arrhenius curve to meet a reliability specification of the SSD.

15. The SSD of claim 9 , wherein the controller is further configured to:

increase the data retention refresh rate when the temperature is equal to or above the predetermined temperature and lower than a first temperature;

maintain the data retention refresh rate when the temperature is equal to or above the first temperature and lower than a second temperature; and

increase the data retention refresh rate when the temperature is equal to or above the second temperature.

16. A solid state device (SSD) comprising non-volatile memory (NVM) comprising:

means for storing data in the NVM;

means for determining a temperature of the NVM;

means for maintaining a data retention refresh rate of the NVM, when the temperature of the NVM is less than a predetermined temperature; and

means for, if the temperature of the NVM is equal to or greater than the predetermined temperature, adjusting the data retention refresh rate such that:

when the temperature of the NVM is equal to or greater than the predetermined temperature and in a first temperature range from T 0 to T 1 , increasing the data retention refresh rate at a first rate;

when the temperature of the NVM is equal to or greater than the predetermined temperature and in a second temperature range from T 1 to T 2 , maintaining the data retention refresh rate over a temperature range greater than 4 degrees and within the second temperature range; and

when the temperature of the NVM is equal to or greater than the predetermined temperature and in a third temperature range from T 2 to T 3 , increasing the data retention refresh rate of the NVM at a third rate,

wherein T 0 <T 1 <T 2 <T 3 .

17. The SSD of claim 16 , wherein the means for adjusting the data retention refresh rate is configured to:

increase the data retention refresh rate of the NVM at a second rate that is less than the first rate, over a temperature range in the second temperature range.

18. The SSD of claim 17 , wherein

the third rate that is greater than the second rate, and

wherein the data retention refresh rate of the NVM in the first temperature range is less than the data retention refresh rate of the NVM in the second temperature range that is less than the data retention refresh rate of the NVM in the third temperature range.

19. The SSD of claim 18 , wherein the first rate is substantially equal to the third rate.

20. The SSD of claim 18 , the means for adjusting the data retention refresh rate is configured to:

increase the data retention refresh rate of the NVM at the first rate according to an Arrhenius curve; and

increase the data retention refresh rate of the NVM at the third rate according to the Arrhenius curve.

21. The SSD of claim 18 , the means for adjusting the data retention refresh rate is configured to:

in the first temperature range, increase the data retention refresh rate at the first rate to meet a performance specification of the SSD, and

in the third temperature range, increase the data retention refresh rate at the third rate that is different from the first rate to meet a reliability specification of the SSD.

22. The SSD of claim 16 , wherein the means for adjusting the data retention refresh rate is configured to increase the data retention refresh rate according to a non-linear relationship between the temperature the of the NVM and data retention refresh time.

23. The apparatus of claim 9 , wherein the controller is further configured to:

in the first temperature range, increase the data retention refresh rate at the first rate to meet a performance specification of the SSD, and

in the third temperature range, increase the data retention refresh rate at the third rate that is different from the first rate to meet a reliability specification of the SSD.

Assignments (10)
PARTIAL RELEASE OF SECURITY INTERESTS Recorded Apr 25, 2025
From: JPMORGAN CHASE BANK, N.A., AS AGENT
To: SANDISK TECHNOLOGIES, INC.
Reel/Frame 071382/0001 →
SECURITY AGREEMENT Recorded Apr 25, 2025
From: SANDISK TECHNOLOGIES, INC.
To: JPMORGAN CHASE BANK, N.A., AS COLLATERAL AGENT
Reel/Frame 071050/0001 →
PATENT COLLATERAL AGREEMENT Recorded Aug 23, 2024
From: SANDISK TECHNOLOGIES, INC.
To: JPMORGAN CHASE BANK, N.A., AS THE AGENT
Reel/Frame 068762/0494 →
CHANGE OF NAME Recorded Jun 27, 2024
From: SANDISK TECHNOLOGIES, INC.
To: SANDISK TECHNOLOGIES, INC.
Reel/Frame 067982/0032 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 29, 2024
From: WESTERN DIGITAL TECHNOLOGIES, INC.
To: SANDISK TECHNOLOGIES, INC.
Reel/Frame 067567/0682 →
PATENT COLLATERAL AGREEMENT - DDTL LOAN AGREEMENT Recorded Aug 21, 2023
From: WESTERN DIGITAL TECHNOLOGIES, INC.
To: JPMORGAN CHASE BANK, N.A.
Reel/Frame 067045/0156 →
PATENT COLLATERAL AGREEMENT - A&R LOAN AGREEMENT Recorded Aug 21, 2023
From: WESTERN DIGITAL TECHNOLOGIES, INC.
To: JPMORGAN CHASE BANK, N.A.
Reel/Frame 064715/0001 →
RELEASE OF SECURITY INTEREST AT REEL 052915 FRAME 0566 Recorded Feb 8, 2022
From: JPMORGAN CHASE BANK, N.A.
To: WESTERN DIGITAL TECHNOLOGIES, INC.
Reel/Frame 059127/0001 →
SECURITY INTEREST Recorded Feb 6, 2020
From: WESTERN DIGITAL TECHNOLOGIES, INC.
To: JPMORGAN CHASE BANK, N.A., AS AGENT
Reel/Frame 052915/0566 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 13, 2018
From: YUAN, JINGFENG; WHALEY, JEFFREY LEE; CHEN, XIAOHENG; WANG, WEI
To: WESTERN DIGITAL TECHNOLOGIES, INC.
Reel/Frame 046348/0712 →