Magnetoresistive stack/structure and method of manufacturing same
A method of manufacturing a magnetoresistive stack/structure comprising (a) etching through a second magnetic region to (i) provide sidewalls of the second magnetic region and (ii) expose a surface of a dielectric layer, (b) depositing a first encapsulation layer on the sidewalls of the second magnetic region and over a surface of the dielectric layer, (c) thereafter: (i) etching the first encapsulation layer which is disposed over the dielectric layer using a first etch process, and (ii) etching re-deposited material using a second etch process, wherein, after such etching, a portion of the first encapsulation layer remains on the sidewalls of the second magnetic region, (d) etching (i) through the dielectric layer to form a tunnel barrier and provide sidewalls thereof and (ii) etching the first magnetic region to provide sidewalls thereof, and (e) depositing a second encapsulation layer on the sidewalls of the tunnel barrier and first magnetic region.
1. A method of manufacturing a magnetoresistive stack/structure from: (i) a first magnetic region including one or more layers of magnetic material, (ii) an intermediate layer disposed over the first magnetic region, and (iii) a second magnetic region including one or snore layers of magnetic material, wherein the second magnetic region is disposed over the intermediate layer, the method comprising:
using a first etch process to etch through the second magnetic region to form one or more first sidewalls and expose an area of the intermediate layer, wherein the one or more first sidewalls and the area of the intermediate layer exposed by the first etch process form exposed surfaces, and wherein at least a portion of the exposed surfaces, after the first etch process, includes re-deposited material;
depositing a first encapsulation layer on the exposed surfaces after the first etch process;
after depositing the first encapsulation layer, using a second etch process to remove at least a portion of the re-deposited material from the exposed surfaces; and
after removing at least a portion of the re-deposited material, etching through the intermediate layer to form one or more second sidewalls; and
depositing a second encapsulation layer on the one or more second sidewalls.
2. The method of claim 1 , wherein the intermediate layer is a dielectric layer.
3. The method of claim 1 , wherein the first etch process is a physical etch.
4. The method of claim 1 , wherein the second etch process includes a physical etch.
5. The method of claim 4 , wherein the second etch process includes ion beam etching.
6. The method of claim 1 , wherein the using the first etch process includes etching through at least a portion of the intermediate layer to expose an area of the intermediate layer below an interface of the intermediate layer with the second magnetic region.
7. The method of claim 1 , wherein the first etch process includes ion beam etching.
8. The method of claim 1 , wherein the first encapsulation layer includes one or more of a silicon oxide, a silicon nitride, and a TEOS.
9. The method of claim 1 , wherein the first encapsulation layer includes one or more of a silicon oxide, a silicon nitride, and a TEOS, and wherein the second encapsulation layer includes one or more of a silicon oxide, a silicon nitride, and a TEOS.
10. A method of manufacturing a magnetoresistive stack/structure from: (i) a first magnetic region including one or more layers of magnetic material, (ii) a dielectric layer disposed over the first magnetic region, and (iii) a second magnetic region including one or more layers of magnetic material, wherein the second magnetic region is disposed over the dielectric layer, the method comprising:
using a first etch process to etch through the second magnetic region to form one or more first sidewalk and expose an area of the dielectric layer, wherein the one or more first sidewalk and the area of the dielectric layer exposed by the first etch process form exposed surfaces, and wherein at least a portion of the exposed surfaces, after the first etch process, includes re-deposited material;
depositing a first encapsulation layer on the exposed surface after the first etch process;
after depositing the first encapsulation layer, using a second etch process to remove at least a portion of the re-deposited material from the exposed surfaces; and
using a third etch process to etch through the dielectric layer and form one or more second sidewalls after removing the portion of the redeposited material, the second and the third etch processes being different etch processes.
11. The method of claim 10 , wherein the first encapsulation layer is one or more of a silicon oxide, a silicon nitride, and a TEOS.
12. The method of claim 10 , further including depositing a second encapsulation layer on the one or more second sidewalk after the third etch process.
13. The method of claim 12 , wherein the second encapsulation layer is one or more of a silicon oxide, a silicon nitride, and a TEOS.
14. The method of claim 10 , wherein the first, second, and third etch processes are physical etch processes.
15. The method of claim 10 , wherein the first, second, and third etch processes use an ion beam for etching.
16. The method of claim 1 , wherein the first magnetic region and the second magnetic region include at least one of a synthetic antiferromagnetic structure (SAF) or a synthetic ferromagnetic structure (SyF).
17. The method of claim 1 , wherein the intermediate layer includes magnesium oxide (MgO).
18. The method of claim 10 , wherein using the first etch process includes etching through at least a portion of the dielectric layer to expose an area of the dielectric layer below an interface of the dielectric layer with the second magnetic region.
19. The method of claim 10 , wherein using the second etch process includes removing at least a portion of the first encapsulation layer deposited on the exposed surfaces.