IP Library › Granted Patent US 10,847,473
Granted Patent B2
US 10,847,473 · App. 16/052,117 · Granted Nov 24, 2020

Printed circuit boards with anti-warping molding portions and related semiconductor packages and methods of fabricating

Inventors: Ji-Han Ko (Suwon-si, KR); Bo Ram Kang (Yongin-si, KR); Dong Kwan Kim (Hwaseong-si, KR)
Assignee: SAMSUNG ELECTRONICS CO., LTD.
H01L23/552H01L21/565H01L23/295H01L23/3128H01L23/3135H01L25/0657H01L25/50H01L21/561H01L24/16H01L24/32H01L24/48H01L24/73H01L2224/0401H01L2224/04042H01L2224/16227H01L2224/32145H01L2224/32225H01L2224/48091H01L2224/48227H01L2224/73265H01L2224/97H01L2225/0651H01L2225/06517H01L2225/06537H01L2225/06555H01L2225/06586H01L2924/15311H01L2924/181H01L2924/3025
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Quick Facts
Patent No.
US 10,847,473
App. No.
16/052,117
Granted
Nov 24, 2020
Kind
B2
Abstract

A semiconductor package can include a substrate and a semiconductor chip on the substrate. A first molding portion can cover the semiconductor chip and can include a first sidewall and a second sidewall opposite each other. A second molding portion can extend on the substrate along the first sidewall and along the second sidewall, where the first molding portion can include a nonconductive material, and the second molding portion can include a conductive material.

Claims (26)

1. A semiconductor package comprising:

a substrate;

a semiconductor chip on the substrate;

a first molding portion which covers the semiconductor chip and comprises a first sidewall and a second sidewall opposite each other;

a second molding portion which extends on the substrate along the first sidewall and the second sidewall; and

a third molding portion on the first molding portion and on the second molding portion and comprises a conductive material,

wherein the first molding portion comprises a nonconductive material, and the second molding portion comprises a conductive epoxy molding compound (EMC),

wherein the second molding portion comprises 85 to 95% by weight of a conductive filler based on 100% by weight of the conductive EMC, and

wherein the third molding portion includes a different content of the conductive filler from the second molding portion.

2. The semiconductor package of claim 1 , wherein the first molding portion further comprises a third sidewall which connects the first sidewall and the second sidewall, and the second molding portion extends on the substrate along the third sidewall.

3. The semiconductor package of claim 2 , wherein the first molding portion further comprises a fourth sidewall opposite the third sidewall, and the second molding portion extends on the substrate along the fourth sidewall.

4. The semiconductor package of claim 1 , wherein the substrate comprises a ground pad and the second molding portion electrically contacts the ground pad.

5. The semiconductor package of claim 1 , wherein the first molding portion covers an uppermost surface of the second molding portion.

6. The semiconductor package of claim 1 , wherein the third molding portion covers an uppermost surface of the first molding portion and an uppermost surface of the second molding portion.

7. The semiconductor package of claim 1 , wherein the conductive EMC comprises a conductive material in an amount to provide sufficient electromagnetic interference shielding to an integrated circuit in the semiconductor package.

8. A semiconductor package comprising:

a substrate;

a semiconductor chip on the substrate;

a first molding portion on the substrate and covering the semiconductor chip;

a second molding portion on the substrate and extending along sidewalls of the first molding portion; and

a third molding portion which covers an uppermost surface of the first molding portion and an uppermost surface of the second molding portion,

wherein the second molding portion and the third molding portion comprise a conductive epoxy molding compound (EMC),

wherein each of the second molding portion and the third molding portion comprises 85 to 95% by weight of a conductive filler based on 100% by weight of the conductive EMC, and

wherein the third molding portion includes a different content of the conductive filler from the second molding portion.

9. The semiconductor package of claim 8 , wherein the first molding portion has a rectangular parallelepiped shape.

10. The semiconductor package of claim 9 , wherein the substrate comprises a ground pad the second molding portion contacts the ground pad, and the third molding portion contacts the second molding portion.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 2, 2018
From: KO, JI-HAN; KANG, BO RAM; KIM, DONG KWAN
To: SAMSUNG ELECTRONICS CO., LTD.
Reel/Frame 046538/0194 →
Priority Claims (1)
KR 10-2017-0138134 · Oct 24, 2017 · national
Continuity (1)
Related Publication 20190122995A1 · Apr 25, 2019
Cited By (1)
US 12,300,667