Integrated circuit (IC) die attached between an offset lead frame die-attach pad and a discrete die-attach pad
An integrated circuit (IC) package, e.g., a power MOSFET package, may include a lead frame including (a) a main lead frame structure including a plurality of leads and defining or lying in a main lead frame plane, and (b) an offset lead frame die-attach pad (DAP) defining or lying in an offset plane that is offset from the main lead frame plane. The power IC package may further include a semiconductor die having a first side attached to the offset lead frame DAP, and a conductive element attached to both (a) a second side of the semiconductor die and (b) the main lead frame structure. The lead frame including the offset DAP may emulate the functionality of a copper clip, thus eliminating the need for the copper clip. The power IC package may also exhibit enhanced heat dissipation capabilities.
1. An integrated circuit (IC) package, comprising:
a lead frame including:
a main lead frame structure including a plurality of leads lying in a main lead frame plane; and
an offset lead frame die-attach pad (DAP) lying in an offset plane that is offset from the main lead frame plane;
a semiconductor die having a first side attached to the offset lead frame DAP; and
a metal heat slug attached to (a) a second side of the semiconductor die and (b) the main lead frame structure,
wherein the semiconductor die is arranged between the offset lead frame DAP and the metal heat slug, such that the metal heat slug is spaced apart from the offset lead frame DAP; and
wherein a thickness of the metal heat slug in a thickness direction perpendicular to the main lead frame plane is greater than (a) a thickness of the main lead frame structure in the thickness direction and greater than (b) a thickness of the DAP in the thickness direction.
2. The IC package of claim 1 , wherein the metal heat slug is at least partially located in an area between the main lead frame plane and the offset plane.
3. The IC package of claim 1 , wherein a surface of the metal heat slug is co-planar with the main lead frame structure.
4. The IC package of claim 1 , wherein the thickness of the metal heat slug is greater than a thickness of the main lead frame structure in the thickness direction.
5. The IC package of claim 4 , wherein the thickness of the metal heat slug is at least twice the thickness of the main lead frame structure in the thickness direction.
6. The IC package of claim 1 , wherein:
the offset lead frame DAP defines a source lead for the semiconductor die; and
the metal heat slug defines a drain lead for the semiconductor die.
7. The IC package of claim 1 , wherein the IC package comprises a power MOSFET package and the semiconductor die comprises a MOSFET die.
8. The IC package of claim 1 , wherein the main lead frame structure further includes at least one additional die-attach-pad, lying in the main lead frame plane, for receiving at least one additional semiconductor die or device.
9. The IC package of claim 1 , wherein:
the lead frame further includes a microcontroller die-attach-pad (DAP); and
the IC package includes a microcontroller mounted to the microcontroller DAP.
10. The IC package of claim 9 , wherein the microcontroller DAP forms a portion of the main lead frame structure, lying in the main lead frame plane.
11. A method of forming an integrated circuit (IC) package, the method comprising:
providing a lead frame including a lead frame including:
a main lead frame structure including a plurality of leads, the main lead frame structure lying in a main lead frame plane; and
an offset lead frame die-attach pad (DAP) lying in an offset plane that is offset from the main lead frame plane;
attaching a first side of a semiconductor die to the offset lead frame DAP;
providing a metal heat slug physically distinct from the lead frame;
attaching the metal heat slug to a second side of the semiconductor die; and
attaching the metal heat slug to the main lead frame structure.
12. The method of claim 11 , wherein the IC package comprises a power MOSFET package and the semiconductor die comprises a MOSFET die.
13. The method of claim 11 , comprising attaching the metal heat slug to the second side of the semiconductor die and to the main lead frame structure in a common step.
14. The method of claim 11 , comprising forming the lead frame by bending or otherwise reshaping the lead frame such that the offset lead frame DAP is located in the offset plane.
15. The method of claim 11 , wherein after attaching the metal heat slug to the semiconductor die and main lead frame structure, the metal heat slug is at least partially located in an area between the main lead frame plane and the offset plane.
16. The method of claim 11 , wherein after attaching the metal heat slug to the semiconductor die and main lead frame structure, a surface of the metal heat slug is co-planar with the main lead frame structure.
17. The method of claim 11 , wherein the metal heat slug is at least twice as thick as the main lead frame structure, in a direction perpendicular to the main lead frame plane.
18. The method of claim 11 , wherein:
the offset lead frame DAP defines a source lead for the semiconductor die; and
the metal heat slug defines a drain lead for the semiconductor die.
19. The method of claim 11 , wherein:
the main lead frame structure further includes at least one additional die-attach-pad lying in the main lead frame plane; and
the method further includes mounting at least one additional semiconductor die or device on the at least one additional die-attach-pad.
20. A lead frame for an integrated circuit (IC) device, comprising:
a main lead frame structure including a plurality of leads, the main lead frame structure lying in a main lead frame plane;
an offset lead frame die-attach pad (DAP) configured for connection to a source contact region of a semiconductor die, the offset lead frame DAP lying in an offset plane that is offset from the main lead frame plane; and
an offset gate signal lead configured for connection to a gate contact region of the semiconductor die, the offset gate signal lead lying in the offset plane and spaced apart from the offset lead frame DAP.