Bonding wire for semiconductor devices
The present invention has as its object the provision of a bonding wire for semiconductor devices mainly comprised of Ag, in which bonding wire for semiconductor devices, the bond reliability demanded for high density mounting is secured and simultaneously a sufficient, stable bond strength is realized at a ball bond, no neck damage occurs even in a low loop, the leaning characteristic is excellent, and the FAB shape is excellent. To solve this problem, the bonding wire for semiconductor devices according to the present invention contains one or more of Be, B, P, Ca, Y, La, and Ce in a total of 0.031 at % to obtain a 0.180 at %, further contains one or more of In, Ga, and Cd in a total of 0.05 at % to 5.00 at %, and has a balance of Ag and unavoidable impurities. Due to this, it is possible to obtain a bonding wire for semiconductor devices sufficiently forming an intermetallic compound layer at a ball bond interface to secure the bond strength of the ball bond, not causing neck damage even in a low loop, having a good leaning characteristic, and having a good FAB shape.
1. Bonding wire for semiconductor devices consisting of:
(C-1) P of 0.060 at% to 0.180 at%, or (C-2) P and one or more of Be, B, Ca, Y, La, and Ce in a total of 0.060 at% to 0.180 at%;
one or more of In, Ga, and Cd in a total of 0.05 at% to 5.00 at%; and
a balance of Ag and unavoidable impurities.
2. The bonding wire for semiconductor devices according to claim 1 wherein when defining a ratio of a total of a number of atoms of In, Ga, and Cd with respect to a total number of atoms of metal elements as a second element atomic ratio, the second element atomic ratio at a region from a wire surface to 1 nm from the wire surface in a depth direction is 1.1 times or more the second element atomic ratio at a region from 1 nm from the wire surface to 10 nm from the wire surface in the depth direction.
3. The bonding wire for semiconductor devices according to claim 1 wherein when defining a ratio of the total of a number of atoms of In, Ga, and Cd with respect to a total number of atoms of metal elements as a second element atomic ratio, the second element atomic ratio at a region from a wire surface to 10 nm from the wire surface in a depth direction is 2 times or more the second element atomic ratio at a region from 20 nm from the wire surface to 30 nm from the wire surface in the depth direction.
4. Bonding wire for semiconductor devices consisting of:
(C-3) P of 0.031 at% to less than 0.060 at% or (C-4) P of 0.031 at% to less than 0.060 at% and one or more of Be, B, Ca, Y, La, and Ce in a total of 0.031 at% to 0.180 at%;
one or more of In, Ga, and Cd in a total of 0.05 at% to 5.00 at%; and
a balance of Ag and unavoidable impurities,
wherein when defining a ratio of the total of a number of atoms of In, Ga, and Cd with respect to a total number of atoms of metal elements as a second element atomic ratio, the bonding wire satisfies one or both of
(A) the second element atomic ratio at a region from a wire surface to 1 nm from the wire surface in a depth direction is 1.1 times or more the second element atomic ratio at a region from 1 nm from the wire surface to 10 nm from the wire surface in the depth direction, and
(B) the second element atomic ratio at a region from the wire surface to 10 nm from the wire surface in the depth direction is 2 times or more the second element atomic ratio at a region from 20 nm from the wire surface to 30 nm from the wire surface in the depth direction.
5. Bonding wire for semiconductor devices consisting of:
(C-5) one or more of Be, B, Ca, Y, La, and Ce in a total of 0.031 at% to 0.180 at%;
one or more of In, Ga, and Cd in a total of 0.05 at% to 5.00 at%; and
a balance of Ag and unavoidable impurities,
wherein when defining a ratio of the total of a number of atoms of In, Ga, and Cd with respect to a total number of atoms of metal elements as a second element atomic ratio, the bonding wire satisfies one or both of
(A) the second element atomic ratio at a region from a wire surface to 1 nm from the wire surface in a depth direction is 1.1 times or more the second element atomic ratio at a region from 1 nm from the wire surface to 10 nm from the wire surface in the depth direction, and
(B) the second element atomic ratio at a region from the wire surface to 10 nm from the wire surface in the depth direction is 2 times or more the second element atomic ratio at a region from 20 nm from the wire surface to 30 nm from the wire surface in the depth direction.
6. The bonding wire for semiconductor devices according to claim 1 wherein an average crystal grain size in a cross-section vertical to a wire axis is 0.2 μm to 3.5 μm.
7. The bonding wire for semiconductor devices according to claim 1 , wherein when measuring a crystal direction in a wire axial direction at a cross-section parallel to a wire axis, including the wire axis, of said bonding wire, the abundance ratio of a <100> crystal direction where an angular difference with respect to the wire axial direction of said bonding wire is 15 degrees or less is, by area ratio, 30% to 100%.
8. The bonding wire for semiconductor devices according to claim 1 containing one or more of In, Ga, and Cd in a total of 2.00 at% or less.