Semiconductor device and manufacturing method thereof
An object is to reduce leakage current and parasitic capacitance of a transistor used for an LSI, a CPU, or a memory. A semiconductor integrated circuit such as an LSI, a CPU, or a memory is manufactured using a thin film transistor in which a channel formation region is formed using an oxide semiconductor which becomes an intrinsic or substantially intrinsic semiconductor by removing impurities which serve as electron donors (donors) from the oxide semiconductor and has larger energy gap than that of a silicon semiconductor. With use of a thin film transistor using a highly purified oxide semiconductor layer with sufficiently reduced hydrogen concentration, a semiconductor device with low power consumption due to leakage current can be realized.
1. A semiconductor device comprising:
a first transistor over a surface of a substrate; and
a second transistor over the surface of the substrate,
wherein the first transistor comprises:
a first gate electrode layer;
a first oxide semiconductor layer over the first gate electrode layer, the first oxide semiconductor layer comprising a channel formation region;
a first conductive layer and a second conductive layer over the first oxide semiconductor layer; and
a second gate electrode layer over the first oxide semiconductor layer, wherein the second transistor comprises:
a second oxide semiconductor layer, the second oxide semiconductor layer comprising a channel formation region;
a third conductive layer and a fourth conductive layer over the second oxide semiconductor layer; and
a third gate electrode layer over the second oxide semiconductor layer,
wherein a channel length of the channel formation region of the first transistor is greater than a channel length of the channel formation region of the second transistor.
2. The semiconductor device according to claim 1 , wherein each of the first oxide semiconductor layer and the second oxide semiconductor layer comprises indium and zinc.
3. The semiconductor device according to claim 1 ,
wherein a hydrogen concentration in each of the first oxide semiconductor layer and the second oxide semiconductor layer is lower than or equal to 5×10 19 /cm 3 , and
wherein a carrier concentration in each of the first oxide semiconductor layer and the second oxide semiconductor layer is lower than or equal to 5×10 14 /cm 3 .
4. The semiconductor device according to claim 1 , wherein an off-current of each of the first transistor and the second transistor is less than or equal to 1×10 −13 A.
5. A display device comprising the semiconductor device according to claim 1 , wherein the first transistor and the second transistor are included in a driving circuit in the semiconductor device.
6. A semiconductor device comprising:
a first transistor over a surface of a substrate; and
a second transistor over the surface of the substrate,
wherein the first transistor comprises:
a first gate electrode layer;
a first oxide semiconductor layer over the first gate electrode layer, the first oxide semiconductor layer comprising a channel formation region; and
a second gate electrode layer over the first oxide semiconductor layer,
wherein the second transistor comprises:
a second oxide semiconductor layer comprising a channel formation region; and
a third gate electrode layer over the second oxide semiconductor layer,
wherein a channel length of the channel formation region of the first transistor is greater than a channel length of the channel formation region of the second transistor.
7. The semiconductor device according to claim 6 , wherein each of the first oxide semiconductor layer and the second oxide semiconductor layer comprises indium and zinc.
8. The semiconductor device according to claim 6 ,
wherein a hydrogen concentration in each of the first oxide semiconductor layer and the second oxide semiconductor layer is lower than or equal to 5×10 19 /cm 3 , and
wherein a carrier concentration in each of the first oxide semiconductor layer and the second oxide semiconductor layer is lower than or equal to 5×10 14 /cm 3 .
9. The semiconductor device according to claim 6 , wherein an off-current of each of the first transistor and the second transistor is less than or equal to 1×10 −13 A.
10. A display device comprising the semiconductor device according to claim 6 , wherein the first transistor and the second transistor are included in a driving circuit in the semiconductor device.
11. A semiconductor device comprising:
a first transistor over a surface of a substrate; and
a second transistor over the surface of the substrate,
wherein the first transistor comprises:
a first gate electrode layer;
a first oxide semiconductor layer over the first gate electrode layer, the first oxide semiconductor layer comprising a channel formation region;
a first conductive layer and a second conductive layer over the first oxide semiconductor layer; and
a second gate electrode layer over the first oxide semiconductor layer,
wherein the second transistor comprises:
a second oxide semiconductor layer comprising a channel formation region;
a third conductive layer and a fourth conductive layer over the second oxide semiconductor layer; and
a third gate electrode layer over the second oxide semiconductor layer,
wherein a channel length of the channel formation region of the first transistor is greater than a channel length of the channel formation region of the second transistor, and
wherein each of the first oxide semiconductor layer and the second oxide semiconductor layer comprises indium, gallium, and zinc.
12. The semiconductor device according to claim 11 ,
wherein a hydrogen concentration in each of the first oxide semiconductor layer and the second oxide semiconductor layer is lower than or equal to 5×10 19 /cm 3 , and
wherein a carrier concentration in each of the first oxide semiconductor layer and the second oxide semiconductor layer is lower than or equal to 5×10 14 /cm 3 .
13. The semiconductor device according to claim 11 , wherein an off-current of each of the first transistor and the second transistor is less than or equal to 1×10 −13 A.
14. A display device comprising the semiconductor device according to claim 11 , wherein the first transistor and the second transistor are included in a driving circuit in the semiconductor device.
15. A semiconductor device comprising:
a first transistor over a surface of a substrate; and
a second transistor over the surface of the substrate,
wherein the first transistor comprises:
a first conductive film;
a first oxide semiconductor layer over the first conductive film, the first oxide semiconductor layer comprising a channel formation region;
a first gate electrode layer over the first oxide semiconductor layer,
wherein the second transistor comprises:
a second oxide semiconductor layer comprising a channel formation region; and
a second gate electrode layer over the second oxide semiconductor layer,
wherein the second transistor has a single-gate structure in which the second oxide semiconductor layer and the second gate electrode layer overlap with each other, and
wherein a channel length of the channel formation region of the first transistor is greater than a channel length of the channel formation region of the second transistor.
16. The semiconductor device according to claim 15 ,
wherein a hydrogen concentration in each of the first oxide semiconductor layer and the second oxide semiconductor layer is lower than or equal to 5×10 19 /cm 3 , and
wherein a carrier concentration in each of the first oxide semiconductor layer and the second oxide semiconductor layer is lower than or equal to 5×10 14 /cm 3 .
17. The semiconductor device according to claim 15 , wherein an off-current of each of the first transistor and the second transistor is less than or equal to 1×10 −13 A.
18. The semiconductor device according to claim 15 , wherein size of plurality of crystals of each of the first oxide semiconductor layer and the second oxide semiconductor layer is greater than or equal to 1 nm and smaller than or equal to 20 nm.
19. A display device comprising the semiconductor device according to claim 15 , wherein the first transistor and the second transistor are included in a driving circuit in the semiconductor device.
20. A semiconductor device comprising:
a first transistor, a second transistor, and a first electrode,
wherein the first transistor comprises:
a first oxide semiconductor layer comprising a first channel formation region; and
a first gate electrode layer over the first oxide semiconductor layer,
wherein the second transistor comprises:
a second oxide semiconductor layer comprising a second channel formation region; and
a second gate electrode layer over the second oxide semiconductor layer,
wherein the first electrode is under the first oxide semiconductor layer,
wherein the first electrode and the first oxide semiconductor layer overlap with each other with an insulating layer therebetween,
wherein an electrode under the second oxide semiconductor layer which overlaps with the second oxide semiconductor layer is not provided,
wherein each of the first oxide semiconductor layer and the second oxide semiconductor layer comprise microcrystalline portions, and
wherein a channel length of the first transistor is greater than a channel length of the second transistor.
21. The semiconductor device according to claim 20 , wherein a hydrogen concentration in each of the first oxide semiconductor layer and the second oxide semiconductor layer is lower than or equal to 5×10 19 /cm 3 .
22. The semiconductor device according to claim 20 , wherein an off-current of each of the first transistor and the second transistor is less than or equal to 1×10 −13 A.
23. The semiconductor device according to claim 21 , wherein the hydrogen concentration is measured by secondary ion mass spectrometry.
24. A semiconductor device comprising:
a first transistor, a second transistor, and a first electrode,
wherein the first transistor comprises:
a first oxide semiconductor layer comprising a first channel formation region; and
a first gate electrode layer over the first oxide semiconductor layer,
wherein the second transistor comprises:
a second oxide semiconductor layer comprising a second channel formation region; and
a second gate electrode layer over the second oxide semiconductor layer,
wherein the first electrode is under the first oxide semiconductor layer,
wherein the first electrode and the first oxide semiconductor layer overlap with each other with an insulating layer therebetween,
wherein an electrode under the second oxide semiconductor layer which overlaps with the second oxide semiconductor layer is not provided,
wherein a size of crystals in each of the first oxide semiconductor layer and the second oxide semiconductor layer is greater than or equal to 1 nm and smaller than or equal to 20 nm, and
wherein a channel length of the first transistor is greater than a channel length of the second transistor.
25. The semiconductor device according to claim 24 , wherein a hydrogen concentration in each of the first oxide semiconductor layer and the second oxide semiconductor layer is lower than or equal to 5×10 19 /cm 3 .
26. The semiconductor device according to claim 24 , wherein an off-current of each of the first transistor and the second transistor is less than or equal to 1×10 −13 A.
27. The semiconductor device according to claim 25 , wherein the hydrogen concentration is measured by secondary ion mass spectrometry.
28. A semiconductor device comprising:
a first transistor, a second transistor, and a first electrode over a glass substrate,
wherein the first transistor comprises:
a first oxide semiconductor layer comprising a first channel formation region; and
a first gate electrode layer over the first oxide semiconductor layer,
wherein the second transistor comprises:
a second oxide semiconductor layer comprising a second channel formation region; and
a second gate electrode layer over the second oxide semiconductor layer,
wherein the first electrode is between the first oxide semiconductor layer and the glass substrate,
wherein the first electrode and the first oxide semiconductor layer overlap with each other with an insulating layer therebetween,
wherein an electrode under the second oxide semiconductor layer which overlaps with the second oxide semiconductor layer is not provided,
wherein a region of the insulating layer is between the glass substrate and the second oxide semiconductor layer,
wherein each of the first oxide semiconductor layer and the second oxide semiconductor layer comprise microcrystalline portions, and
wherein a channel length of the first transistor is greater than a channel length of the second transistor.
29. The semiconductor device according to claim 28 , wherein a hydrogen concentration in each of the first oxide semiconductor layer and the second oxide semiconductor layer is lower than or equal to 5×10 19 /cm 3 .
30. The semiconductor device according to claim 28 , wherein an off-current of each of the first transistor and the second transistor is less than or equal to 1×10 −13 A.
31. The semiconductor device according to claim 29 , wherein the hydrogen concentration is measured by secondary ion mass spectrometry.
32. A semiconductor device comprising:
a first transistor, a second transistor, and a first electrode over a glass substrate,
wherein the first transistor comprises:
a first oxide semiconductor layer comprising a first channel formation region; and
a first gate electrode layer over the first oxide semiconductor layer,
wherein the second transistor comprises:
a second oxide semiconductor layer comprising a second channel formation region; and
a second gate electrode layer over the second oxide semiconductor layer,
wherein the first electrode is between the first oxide semiconductor layer and the glass substrate,
wherein the first electrode and the first oxide semiconductor layer overlap with each other with an insulating layer therebetween,
wherein an electrode under the second oxide semiconductor layer which overlaps with the second oxide semiconductor layer is not provided,
wherein a region of the insulating layer is between the glass substrate and the second oxide semiconductor layer,
wherein a size of crystals in each of the first oxide semiconductor layer and the second oxide semiconductor layer is greater than or equal to 1 nm and smaller than or equal to 20 nm, and
wherein a channel length of the first transistor is greater than a channel length of the second transistor.
33. The semiconductor device according to claim 32 , wherein a hydrogen concentration in each of the first oxide semiconductor layer and the second oxide semiconductor layer is lower than or equal to 5×10 19 /cm 3 .
34. The semiconductor device according to claim 32 , wherein an off-current of each of the first transistor and the second transistor is less than or equal to 1×10 −13 A.
35. The semiconductor device according to claim 33 , wherein the hydrogen concentration is measured by secondary ion mass spectrometry.
36. A semiconductor device comprising:
a first transistor including a first oxide semiconductor layer where a channel is provided and a first gate electrode over the first oxide semiconductor layer; and
a second transistor including a second oxide semiconductor layer where a channel is provided and a second gate electrode over the second oxide semiconductor layer,
wherein the first oxide semiconductor layer and the second oxide semiconductor layer each comprises indium, gallium and zinc,
wherein an electrode layer overlapping with the first oxide semiconductor layer is provided on a lower side of the first oxide semiconductor layer with an insulating layer therebetween,
wherein no electrode layer overlapping with the second oxide semiconductor layer is provided on a lower side of the second oxide semiconductor layer,
wherein the first oxide semiconductor layer and the second oxide semiconductor layer are provided on the same plane, and
wherein a channel length of the first transistor is longer than a channel length of the second transistor.
37. A semiconductor device comprising:
a substrate;
a first transistor over the substrate, the first transistor including a first oxide semiconductor layer where a channel is provided and a first gate electrode over the first oxide semiconductor layer; and
a second transistor over the substrate, the second transistor including a second oxide semiconductor layer where a channel is provided and a second gate electrode over the second oxide semiconductor layer,
wherein the first oxide semiconductor layer and the second oxide semiconductor layer each comprises indium, gallium and zinc,
wherein between the substrate and the first oxide semiconductor layer an electrode layer overlapping with the first oxide semiconductor layer is provided with an insulating layer therebetween,
wherein between the substrate and the second oxide semiconductor layer no electrode layer overlapping with the second oxide semiconductor layer is provided,
wherein the first oxide semiconductor layer and the second oxide semiconductor layer are provided on the same plane,
wherein the insulating layer comprises a region provided between the substrate and the second oxide semiconductor layer, and
wherein a channel length of the first transistor is longer than a channel length of the second transistor.
38. A semiconductor device comprising:
a substrate;
a first transistor over the substrate, the first transistor including a first oxide semiconductor layer where a channel is provided and a first gate electrode over the first oxide semiconductor layer; and
a second transistor over the substrate, the second transistor including a second oxide semiconductor layer where a channel is provided and a second gate electrode over the second oxide semiconductor layer,
wherein the first oxide semiconductor layer and the second oxide semiconductor layer each comprises indium, gallium and zinc,
wherein, between the substrate and the first oxide semiconductor layer, an electrode layer overlapping with the first oxide semiconductor layer is provided with an insulating layer therebetween,
wherein, between the substrate and the second oxide semiconductor layer, no electrode layer overlapping with the second oxide semiconductor layer is provided,
wherein each of the first oxide semiconductor layer and the second oxide semiconductor layer are in direct contact with an upper surface of the insulating layer,
wherein the insulating layer comprises a region provided between the substrate and the second oxide semiconductor layer, and
wherein a channel length of the first transistor is longer than a channel length of the second transistor.