Analog circuit and semiconductor device
An object is to obtain a semiconductor device having a high sensitivity in detecting signals and a wide dynamic range, using a thin film transistor in which an oxide semiconductor layer is used. An analog circuit is formed with the use of a thin film transistor including an oxide semiconductor which has a function as a channel formation layer, has a hydrogen concentration of 5×10 19 atoms/cm 3 or lower, and substantially functions as an insulator in the state where no electric field is generated. Thus, a semiconductor device having a high sensitivity in detecting signals and a wide dynamic range can be obtained.
1. A semiconductor device comprising:
a first transistor;
a second transistor;
a light emitting element;
a first wiring; and
a second wiring,
wherein one of a source and drain of the first transistor is electrically connected to the first wiring,
wherein the other of the source and the drain of the first transistor is electrically connected to a gate of the second transistor,
wherein one of a source and drain of the second transistor is electrically connected to the light emitting element,
wherein the other of the source and the drain of the second transistor is electrically connected to the second wiring,
wherein each of the first transistor and the second transistor includes a gate, a first insulating layer over the gate, an oxide semiconductor over the first insulating layer, a second insulating layer over the oxide semiconductor, and the source and the drain over the second insulating layer,
wherein the oxide semiconductor is an intrinsic or substantially intrinsic, and
wherein in each of the first transistor and the second transistor, a drain current is 1×10 −13 A or lower within a gate voltage range of −5 V to −20 V when the drain voltage is 1 V and 10 V.
2. A semiconductor device comprising:
a first transistor;
a second transistor;
a light emitting element;
a first wiring; and
a second wiring,
wherein one of a source and drain of the first transistor is electrically connected to the first wiring,
wherein the other of the source and the drain of the first transistor is electrically connected to a gate of the second transistor,
wherein one of a source and drain of the second transistor is electrically connected to the light emitting element,
wherein the other of the source and drain of the second transistor is electrically connected to the second wiring,
wherein each of the first transistor and the second transistor includes a first gate, a first insulating layer over the first gate, an oxide semiconductor over the first insulating layer, the source and the drain over the oxide semiconductor, a second insulating layer over the source and the drain, and a second gate over the second insulating layer,
wherein the oxide semiconductor is an intrinsic or substantially intrinsic, and
wherein in each of the first transistor and the second transistor, a drain current is 1×10 −13 A or lower within a gate voltage range of −5 V to −20 V when the drain voltage is 1 V and 10 V.