Data storage systems and methods for improved recovery after a write abort event
A data storage system may include a non-volatile memory device, having one or more wordlines configured to receive a read level voltage, and a controller. The controller is configured to detect whether a write abort event occurred for the data storage system. The controller is configured to determine a first voltage offset based on one or more of a wear-level indication of the non-volatile memory device, or one or more voltage parameters of the non-volatile memory device. The controller is configured to determine, based on the first voltage offset, an adjusted read level voltage. The controller is configured to apply the adjusted read level voltage to a wordline of the non-volatile memory device. The controller is configured to read data, based on the applied adjusted read level voltage, from the wordline of the non-volatile memory device. Methods are also described.
1. A computer-implemented method for a data storage system, comprising:
detecting whether a write abort event occurred for the data storage system, wherein the data storage system is configured to apply a read level voltage to a wordline of a non-volatile memory device;
in response to detecting that the write abort event occurred:
determining a first voltage offset based on one or more of a wear-level indication of the non-volatile memory device, or one or more voltage parameters of the non-volatile memory device;
determining, based on the first voltage offset, an adjusted read level voltage;
applying the adjusted read level voltage to the wordline of the non-volatile memory device; and
reading data, based on the applied adjusted read level voltage, from the wordline of the non-volatile memory device.
2. The computer-implemented method of claim 1 , wherein the first voltage offset is determined based on a wordline zone and the wear-level indication of the non-volatile memory device.
3. The computer-implemented method of claim 2 , further comprising:
in response to detecting that the write abort event occurred, determining a second voltage offset based on the one or more parameters of the non-volatile memory device.
4. The computer-implemented method of claim 3 , wherein determining the adjusted read level voltage comprises determining, based on the first voltage offset and the second voltage offset, the adjusted read level voltage.
5. The computer-implemented method of claim 1 , further comprising:
determining a first programming voltage and a first erase voltage associated with the one or more voltage parameters of the non-volatile memory device.
6. The computer-implemented method of claim 5 , further comprising:
determining, based on the first programming voltage and the first erase voltage, a second voltage offset, wherein determining the adjusted read level voltage comprises determining, based on the first voltage offset and the second voltage offset, the adjusted read level voltage.
7. The computer-implemented method of claim 1 , further comprising:
identifying the wordline being programmed at a time of the write abort event; and
determining a wordline zone associated with the wordline.
8. The computer-implemented method of claim 1 , further comprising:
determining, based on the read data, a number of errors of the wordline;
determining whether the number of errors satisfy a threshold number of errors; and
in response to determining that the number of errors satisfy the threshold number of errors, resuming programming of the wordline.
9. A data storage system, comprising:
a non-volatile memory device, having one or more wordlines configured to receive a read level voltage; and
a controller;
wherein,
the controller is configured to:
detect whether a write abort event occurred for the data storage system;
determine a first voltage offset based on one or more of a wear-level indication of the non-volatile memory device, or one or more voltage parameters of the non-volatile memory device;
determine, based on the first voltage offset, an adjusted read level voltage;
apply the adjusted read level voltage to a wordline of the non-volatile memory device; and
read data, based on the applied adjusted read level voltage, from the wordline of the non-volatile memory device.
10. The data storage system of claim 9 , wherein the one or more voltage parameters comprise one or more of a programming voltage parameter, or an erase voltage parameters.
11. The data storage system of claim 10 , wherein a programming voltage of the programming voltage parameter is based on a manufacturing variance of the non-volatile memory device.
12. The data storage system of claim 10 , wherein an erase voltage of the erase voltage parameter is based on a manufacturing variance of the non-volatile memory device.
13. The data storage system of claim 9 , wherein the controller is configured to determine the first voltage offset based on a wordline zone and the wear-level indication of the non-volatile memory device.
14. The data storage system of claim 13 , wherein the controller is configured to determine, based on the one or more voltage parameters of the non-volatile memory device, a second voltage offset.
15. The data storage system of claim 14 , wherein the controller is configured to determine, based on the first voltage offset and the second voltage offset, the adjusted read level voltage.
16. The data storage system of claim 9 , wherein the controller is configured to determine a first programming voltage based on the one or more voltage parameters of the non-volatile memory device.
17. The data storage system of claim 16 , wherein the controller is configured to determine a first erase voltage based on the one or more voltage parameters of the non-volatile memory device.
18. The data storage system of claim 17 , wherein the controller is configured to:
determine, based on the first programming voltage and the first erase voltage, a second voltage offset; and
determine, based on the first voltage offset and the second voltage offset, the adjusted read level voltage.
19. The data storage system of claim 9 , wherein the controller is configured to:
determine, based on the read data, a number of errors of the wordline;
determine that the number of errors is less than a threshold number of errors; and
continuing programming of the wordline.
20. A data storage system, comprising:
a non-volatile memory device;
means for detecting whether a write abort event occurred for the data storage system;
in response to detecting that the write abort event occurred:
means for determining a first voltage offset based on one or more of a wear-level indication of a non-volatile memory device, or one or more voltage parameters of the non-volatile memory device;
means for determining, based on the first voltage offset, an adjusted read level voltage;
means for applying the adjusted read level voltage to a wordline of the non-volatile memory device; and
means for reading data, based on the applied adjusted read level voltage, from the wordline of the non-volatile memory device.