Electronic device for displaying image comprising first and second LEDs, first TFT, and one of non-self-luminous display or light emitting control unit

1. An electronic device, comprising:

a light-emitting module, comprising:

a light-emitting unit having a first end, the light-emitting unit comprising a first diode and a second diode coupled in series, wherein at least one of the first diode and the second diode is an inorganic light-emitting diode for generating light;

a data line; and

a first circuit unit comprising:

a first thin-film transistor and a first light-emitting control unit, wherein the first thin-film transistor is coupled to the first end of the light-emitting unit and a power source, wherein the first light-emitting control unit is directly connected to the data line, the first thin-film transistor, and the power source;

a second thin-film transistor, one of a source and a drain of the second thin-film transistor is coupled to a gate of the first thin-film transistor;

wherein the other one of the source and the drain of the second thin-film transistor is coupled to the data line, and a gate of the second thin-film transistor is coupled to a scan line;

a second light-emitting control unit coupled to the first thin-film transistor and the light emitting unit, and the second light-emitting control unit is directly connected to the data line; and

a non-self-luminous display panel disposed on the light-emitting module, wherein the light-emitting unit of the light-emitting module faces the non-self-luminous display panel, and light generated from the light-emitting unit of the light-emitting module is capable of entering the non-self-luminous display panel from a back surface of the non-self-luminous display panel.

2. The electronic device according to claim 1 , wherein the first thin-film transistor comprises an active layer, a material of the active layer comprises one of low-temperature polysilicon semiconductor, amorphous semiconductor and metal oxide semiconductor.

3. The electronic device according to claim 1 , wherein the electronic device further comprises a second circuit unit, the first circuit unit and the second circuit unit are coupled in parallel, and the second circuit unit is coupled to the first end of the light-emitting unit and the power source.

4. The electronic device according to claim 1 , wherein each of the first diode and the second diode comprises a p-type semiconductor layer, a light-emitting layer and an n-type semiconductor layer.

5. The electronic device according to claim 1 , wherein the first diode and the second diode are disposed in a first package.

6. The electronic device according to claim 5 , wherein the first package comprises a first base substrate, and the first diode and the second diode are disposed on the first base substrate.

7. The electronic device according to claim 1 , wherein the first diode is disposed in a first package, and the second diode is disposed in a second package.

8. The electronic device according to claim 1 , wherein the light-emitting unit further comprises a third diode, the first diode, the second diode and the third diode are coupled in series, the first diode and the second diode are disposed in a first package, and the third diode is disposed in a second package.

9. The electronic device according to claim 1 , wherein the light-emitting unit further comprises a second end coupled to a low power source, and the power source is a high power source.

10. The electronic device according to claim 9 , wherein the first circuit unit further comprises a capacitor coupled to a gate and a drain of the first thin-film transistor.

11. The electronic device according to claim 1 , wherein the light-emitting unit further comprises a second end coupled to a high power source, and the power source is a low power source.

12. The electronic device according to claim 11 , wherein the first circuit unit further comprises a capacitor coupled to a gate and a source of the first thin-film transistor.