OLED display with protection circuit
A display comprising a light emitting OLED stack on top of a silicon-based backplane with individually addressable pixels and control circuitry wherein the control circuitry of the silicon-based backplane comprises at least one driving transistor where a first terminal of the driving transistor is electrically connected to an external power source VDD, and the second terminal of the driving transistor is electrically connected to the bottom electrode of the OLED stack; wherein the gate of the driving transistor is controlled by a data signal which supplied by a scan transistor controlled by a signal from select line SELECT 1 ; and the control circuitry additionally comprises a protection circuit comprising a bipolar junction transistor. There can be a switch transistor between the scan transistor and the gate of the driving transistor for microdisplay applications. The OLED stack can comprise two or more OLED light-emitting units.
1. A display comprising a light emitting OLED stack on top of a silicon-based backplane with individually addressable pixels and control circuitry wherein:
the control circuitry of the silicon-based backplane comprises at least one driving transistor where a first terminal of the driving transistor is electrically connected to an external power source V DD , and the second terminal of the driving transistor is electrically connected to a segmented bottom electrode of the OLED stack; wherein the gate of the driving transistor is controlled by a data signal which is supplied by a scan transistor controlled by a signal from a first select line; and
the control circuitry additionally comprises a protection circuit comprising a bipolar junction transistor with a collector terminal electrically connected to external power source V DD .
2. The display of claim 1 wherein there is a switch transistor between the scan transistor and the gate of the driving transistor where the gate of the switch transistor is controlled by a signal from a second select line, which is different from the first select line.
3. The display of claim 1 wherein the driving transistor is rated at 5V or lower.
4. The display of claim 2 wherein the driving and switch transistor are both p-channel transistors.
5. The display of claim 1 wherein the OLED stack comprises a single OLED light-emitting unit between the segmented bottom electrode and a top electrode.
6. The display of claim 5 wherein the OLED stack forms a microcavity where the physical distance between the segmented bottom electrode and the top electrode is constant across all pixels.
7. The display of claim 5 wherein the top electrode is transparent or semi-transparent so that the OLED stack is top emitting.
8. The display of claim 1 wherein the OLED stack comprises two or more OLED light-emitting units between the segmented bottom electrode and a top electrode.
9. The display of claim 8 wherein the OLED light-emitting units are each separated from each other by a charge-generation layer (CGL).
10. The display of claim 8 wherein the OLED stack forms a microcavity where the physical distance between the segmented bottom electrode and the top electrode is constant across all pixels.
11. The display of claim 8 wherein the top electrode is transparent or semi-transparent so that the OLED stack is top emitting.
12. The display of claim 1 wherein the bipolar junction transistor is an NPN transistor wherein the base is connected either to a voltage source V PROTECT or a current source I PROTECT , the emitter is connected to a node connected to the bottom electrode of the OLED stack and the collector is connected to external power source.
13. The display of claim 1 wherein the bipolar junction transistor is an NPN transistor wherein the base is isolated, the emitter is connected to a node connected to the bottom electrode of the OLED stack and the collector is connected to external power source.
14. The display of claim 1 wherein the bipolar junction transistor is located in a separate well from the driving transistor.
15. The display of claim 1 wherein there is a switch transistor connected in parallel to the scan transistor between the data line and the gate of the driving transistor where the gate of the switch transistor is controlled by a signal from a second select line, which is different from the first select line.
16. The display of claim 15 where the driving transistor is rated at 5V or lower.
17. The display of claim 15 wherein the driving and switch transistor are both p-channel transistors.
18. The display of claim 1 wherein there are two or more driving transistors in series where the first terminal of first driving transistor is electrically connected to an external power source V DD , and the second terminal of the last driving transistor is electrically connected to a segmented bottom electrode of the OLED stack.
19. The display of claim 1 where the emitter terminal of the bipolar junction transistor is electrically connected to a node between the driving transistor and the segmented bottom electrode of the OLED stack.
20. The display of claim 1 where the base terminal of the bipolar junction transistor is electrically connected to a power source.
21. The display of claim 20 where the power source is either a voltage source V PROTECT or a current source I PROTECT .
22. The display of claim 1 wherein the collector terminal is electrically connected to a node between the external power source V DD and the driving transistor.