Interface adjustment processes for a data storage device

1. A data storage device comprising:

a comparator, wherein the comparator is configured to detect a message indicating that a host device is to initiate a first calibration process associated with a first interface; and

a phase calibrator, wherein the phase calibrator is configured to initiate a second calibration process associated with a second interface in response to the message indicating that the host device is to initiate the first calibration process.

2. The data storage device of claim 1 , further comprising a timing device, wherein the phase calibrator is further configured to adjust a phase of a timing signal associated with the second interface using the timing device during the second calibration process.

3. The data storage device of claim 2 , further comprising a controller that includes the comparator and the phase calibrator, wherein the controller is further configured to generate a clock signal or a strobe signal, and wherein the timing signal includes the clock signal or the strobe signal.

4. The data storage device of claim 2 , further comprising a memory device, wherein the memory device is configured to generate a read enable signal, and wherein the timing signal includes the read enable signal.

5. The data storage device of claim 4 , wherein the memory device includes a non-volatile memory having a three-dimensional (3D) memory configuration that is monolithically formed in one or more physical levels of arrays of memory cells having an active area above a silicon substrate, and further comprising circuitry associated with operation of the memory cells.

6. A data storage device comprising:

a memory device; and

a controller coupled to the memory device, the controller including a host interface and a memory interface, the controller configured to receive a message from a host device via the host interface, the message indicating that the host device is to perform a first adjustment process associated with the host interface, the controller further configured to perform a second adjustment process associated with the memory interface in response to receiving the message indicating that the host device is to perform the first adjustment process, wherein the host device performs the first adjustment process to calibrate a phase of a first timing signal associated with the host interface and the controller performs the second adjustment process to calibrate a phase of a second timing signal associated with the memory interface, and

wherein the second adjustment process affects the first adjustment process.

7. The data storage device of claim 6 , further comprising:

a comparator configured to detect the message, wherein the first adjustment process comprises a first calibration process associated with the host interface; and

a phase calibrator configured to initiate the second adjustment process in response to the message indicating that the host device is to initiate the first adjustment process, wherein the second adjustment process comprises a second calibration process associated with the memory interface.

8. The data storage device of claim 6 , further comprising a timing device, wherein the controller is further configured to adjust a phase of a timing signal associated with the memory interface using the timing device during the second adjustment process.

9. The data storage device of claim 8 , wherein the controller is further configured to generate a clock signal or a strobe signal, and

the timing signal includes the clock signal or the strobe signal.

10. The data storage device of claim 8 , wherein:

the memory device is configured to generate a read enable signal, and

the timing signal includes the read enable signal.

11. The data storage device of claim 6 , wherein the memory device includes a non-volatile memory having a three-dimensional (3D) memory configuration that is monolithically formed in one or more physical levels of arrays of memory cells having an active area above a silicon substrate, and further comprising circuitry associated with operation of the memory cells.

12. An apparatus comprising:

means for receiving a message from a host device, the message indicating that the host device is to perform a first adjustment process associated with the means for receiving; and

means for performing a second adjustment process in response to receiving the message indicating that the host device is to perform the first adjustment process, wherein the host device performs the first adjustment process to calibrate a phase of a first timing signal associated with a host interface and a controller performs the second adjustment process to calibrate a phase of a second timing signal associated with a memory interface, and

wherein the second adjustment process affects the first adjustment process.

13. The apparatus of claim 12 , further comprising:

means for storing data, wherein the second adjustment process includes reading the data in response to the message indicating that the host device is to perform the first adjustment process; and

means for decoding the data after the data is read from the means for storing.