Solid-state imaging device and electronic apparatus with divided pixels
A solid-state imaging device includes a plurality of pixels each of which includes a photoelectric conversion unit that generates charges by photoelectrically converting light, and a transistor that reads a pixel signal of a level corresponding to the charges generated in the photoelectric conversion unit. A phase difference pixel which is at least a part of the plurality of pixels is configured in such a manner that the photoelectric conversion unit is divided into a plurality of photoelectric conversion units and an insulated light shielding film is embedded in a region for separating the plurality of photoelectric conversion units, which are divided, from each other.
1. An imaging device comprising:
a substrate;
first, second, third, and fourth photoelectric conversion regions disposed in the substrate;
a trench disposed in the substrate;
a first microlens disposed over the first, second, third, and fourth photoelectric conversion regions; and
a first insulating film disposed in the trench,
wherein the first and the second photoelectric conversion regions are arranged adjacent to one another in a first direction,
wherein the third and fourth photoelectric conversion regions are arranged adjacent to one another in the first direction,
wherein the first and the third photoelectric conversion regions are arranged adjacent to one another in a second direction that is perpendicular to the first direction,
wherein the trench is disposed between the first, second, third, and fourth photoelectric conversion regions, and
wherein, in a plan view, the first microlens overlaps the first, second, third, and fourth photoelectric conversion regions.
2. The imaging device according to claim 1 , further comprising:
a fifth photoelectric conversion region disposed in the substrate; and
a second microlens disposed over the fifth photoelectric conversion region,
wherein an area of the fifth photoelectric conversion region is larger than an area of the first photoelectric conversion region.
3. The imaging device according to claim 2 , wherein the fifth photoelectric conversion region is adjacent to the second and fourth photoelectric conversion regions in the first direction.
4. The imaging device according to claim 1 , further comprising:
a fifth photoelectric conversion region disposed in the substrate;
a first color filter disposed above the first, second, third, and fourth photoelectric conversion regions; and
a second color filter disposed above the fifth photoelectric conversion region,
wherein a material of the first color filter is different from a material of the second color filter.
5. The imaging device according to claim 4 , wherein the fifth photoelectric conversion region is adjacent to the second and fourth photoelectric conversion regions in the first direction.
6. The imaging device according to claim 1 , wherein, in the plan view, the trench has a cross shape.
7. The imaging device according to claim 1 , wherein an end of the trench furthest from a light-receiving surface of the substrate is at a location in the substrate that is between the first, second, third, and fourth photoelectric conversion regions.
8. The imaging device according to claim 1 , further comprising:
a second insulating film disposed on the first insulating film.
9. The imaging device according to claim 8 , further comprising:
a metal disposed in the trench and surrounded on three sides by the first insulating film.
10. The imaging device according to claim 9 , wherein the second insulating film is on a fourth side of the metal.
11. An electronic apparatus comprising:
a signal processing circuit; and
an imaging device including:
a substrate;
first, second, third, and fourth photoelectric conversion regions disposed in the substrate;
a trench disposed in the substrate;
a first microlens disposed over the first, second, third, and fourth photoelectric conversion regions; and
a first insulating film disposed in the trench,
wherein the first and the second photoelectric conversion regions are arranged adjacent to one another in a first direction,
wherein the third and fourth photoelectric conversion regions are arranged adjacent to one another in the first direction,
wherein the first and the third photoelectric conversion regions are arranged adjacent to one another in a second direction that is perpendicular to the first direction,
wherein the trench is disposed between the first, second, third, and fourth photoelectric conversion regions, and
wherein, in a plan view, the first microlens overlaps the first, second, third, and fourth photoelectric conversion regions.
12. The electronic apparatus according to claim 11 , further comprising:
a fifth photoelectric conversion region disposed in the substrate; and
a second microlens disposed over the fifth photoelectric conversion region,
wherein an area of the fifth photoelectric conversion region is larger than an area of the first photoelectric conversion region.
13. The electronic apparatus according to claim 12 , wherein the fifth photoelectric conversion region is adjacent to the second and fourth photoelectric conversion regions in the first direction.
14. The electronic apparatus according to claim 11 , further comprising:
a fifth photoelectric conversion region disposed in the substrate;
a first color filter disposed above the first, second, third, and fourth photoelectric conversion regions; and
a second color filter disposed above the fifth photoelectric conversion region,
wherein a material of the first color filter is different from a material of the second color filter.
15. The electronic apparatus according to claim 14 , wherein the fifth photoelectric conversion region is adjacent to the second and fourth photoelectric conversion regions in the first direction.
16. The electronic apparatus according to claim 11 , wherein, in the plan view, the trench has a cross shape.
17. The electronic apparatus according to claim 11 , wherein an end of the trench furthest from a light-receiving surface of the substrate is at a location in the substrate that is between the first, second, third, and fourth photoelectric conversion regions.
18. The electronic apparatus according to claim 11 , further comprising:
a second insulating film disposed on the first insulating film.
19. The electronic apparatus according to claim 18 , further comprising:
a metal disposed in the trench and surrounded on three sides by the first insulating film.
20. The electronic apparatus according to claim 19 , wherein the second insulating film is on a fourth side of the metal.