Polarization splitters based on stacked waveguides
Structures for a polarization splitter and methods of forming a polarization splitter. A multi-mode interference region includes a first waveguide and a second waveguide arranged in a stack over the first waveguide. First and second input ports are connected with the multi-mode interference region. First and second output ports are connected with the multi-mode interference region.
1. A structure for a polarization splitter, the structure comprising:
a multi-mode interference region including a first waveguide and a second waveguide arranged in a first stack over the first waveguide;
a first input port and a second input port connected with the multi-mode interference region; and
a first output port and a second output port connected with the multi-mode interference region.
2. The structure of claim 1 wherein the first input port and the second input port each include a third waveguide and a fourth waveguide in a second stack over the third waveguide.
3. The structure of claim 2 wherein the first output port and the second output port each include a fifth waveguide and a sixth waveguide over the fifth waveguide.
4. The structure of claim 2 wherein the third waveguide of the first input port and the third waveguide of the second input port are directly connected with the first waveguide of the multi-mode interference region.
5. The structure of claim 4 wherein the fourth waveguide of the first output port and the fourth waveguide of the second output port are directly connected with the second waveguide of the multi-mode interference region.
6. The structure of claim 4 wherein the fourth waveguide of the first input port and the fourth waveguide of the second input port are directly connected with the second waveguide of the multi-mode interference region.
7. The structure of claim 2 wherein the first waveguide has a first width, the second waveguide has a second width that is less than the first width, the third waveguide has a third width, and the fourth waveguide has a fourth width that is less than the third width.
8. The structure of claim 2 further comprising:
a first dielectric layer and a second dielectric layer arranged between the first waveguide and the second waveguide and arranged between the third waveguide and the fourth waveguide,
wherein the first dielectric layer is comprised of an oxide of silicon, and the second dielectric layer is comprised of silicon nitride.
9. The structure of claim 1 wherein the first output port and the second output port each include a third waveguide and a fourth waveguide in a second stack over the third waveguide.
10. The structure of claim 9 wherein the third waveguide of the first output port and the third waveguide of the second output port are directly connected with the second waveguide of the multi-mode interference region.
11. The structure of claim 1 wherein the first waveguide has a first width, and the second waveguide has a second width that is less than the first width.
12. The structure of claim 1 wherein the first waveguide has a first width, and the second waveguide has a second width that is greater than the first width.
13. The structure of claim 1 wherein the first waveguide is comprised of single-crystal silicon, and the second waveguide is comprised of silicon nitride.
14. The structure of claim 1 wherein the first input port and the second input port are symmetrically arranged relative to the first output port and the second output port.
15. The structure of claim 1 further comprising:
a first dielectric layer and a second dielectric layer arranged between the first waveguide and the second waveguide,
wherein the first dielectric layer is comprised of an oxide of silicon, and the second dielectric layer is comprised of silicon nitride.
16. A method of forming a structure for a polarization splitter, the method comprising:
forming a multi-mode interference region including a first waveguide and a second waveguide arranged in a first stack over the first waveguide;
forming a first input port and a second input port connected with the multi-mode interference region; and
forming a first output port and a second output port connected with the multi-mode interference region.
17. The method of claim 16 wherein the first input port and the second input port each include a third waveguide and a fourth waveguide in a second stack over the third waveguide, and the first waveguide of the multi-mode interference region, the third waveguide of the first input port, and the third waveguide of the second input port are concurrently patterned from a layer of single-crystal silicon.
18. The method of claim 17 wherein the third waveguide of the first input port and the third waveguide of the second input port are directly connected with the first waveguide of the multi-mode interference region, and the fourth waveguide of the first input port and the fourth waveguide of the second input port are directly connected with the second waveguide of the multi-mode interference region.
19. The method of claim 16 wherein the first output port and the second output port each include a third waveguide and a fourth waveguide in a second stack over the third waveguide, and the first waveguide of the multi-mode interference region, the second waveguide of the multi-mode interference region, the fourth waveguide of the first output port, and the fourth waveguide of the second output port are concurrently patterned from a layer of silicon nitride.
20. The method of claim 19 wherein the third waveguide of the first output port and the third waveguide of the second output port are directly connected with the first waveguide of the multi-mode interference region, and the fourth waveguide of the first output port and the fourth waveguide of the second output port are directly connected with the second waveguide of the multi-mode interference region.