Non-volatile memory cells with floating gates in dedicated trenches
A pair of memory cells that includes first and second spaced apart trenches formed into the upper surface of a semiconductor substrate, and first and second floating gates disposed in the first and second trenches. First and second word line gates disposed over and insulated from a portion of the upper surface that is adjacent to the first and second floating gates respectively. A source region is formed in the substrate laterally between the first and second floating gates. First and second channel regions extend from the source region, under the first and second trenches respectively, along side walls of the first and second trenches respectively, and along portions of the upper surface disposed under the first and second word line gates respectively. The first and second trenches only contain the first and second floating gates and insulation material respectively.
1. A pair of memory cells, comprising:
a semiconductor substrate having an upper surface;
first and second trenches formed into the upper surface and spaced apart from each other;
a first floating gate of conductive material disposed in the first trench and insulated from the substrate;
a second floating gate of conductive material disposed in the second trench and insulated from the substrate;
an erase gate of conductive material having a first portion extending into the upper surface, and disposed laterally between and insulated from the first and second floating gates;
a first word line gate of conductive material disposed over and insulated from a portion of the upper surface that is adjacent to the first floating gate;
a second word line gate of conductive material disposed over and insulated from a portion of the upper surface that is adjacent to the second floating gate;
a source region formed in the substrate laterally between the first and second floating gates and vertically under and insulated from the first portion of the erase gate;
a first drain region formed in a portion of the upper surface adjacent to the first word line gate;
a second drain region formed in a portion of the upper surface adjacent to the second word line gate;
wherein a first channel region of the substrate extends from the source region to the first drain region, including extending at least under the first trench, along a side wall of the first trench, and along a portion of the upper surface disposed under the first word line gate; and
wherein a second channel region of the substrate extends from the source region to the second drain region, including extending at least under the second trench, along a side wall of the second trench, and along a portion of the upper surface disposed under the second word line gate.
2. The pair of memory cells of claim 1 , wherein the first trench only contains therein the first floating gate and insulation material that insulates the first floating gate from the substrate, and wherein the second trench only contains therein the second floating gate and insulation material that insulates the second floating gate from the substrate.
3. The pair of memory cells of claim 1 , wherein the erase gate further comprises a second portion extending up and at least partially vertically over the first and second floating gates.
4. The pair of memory cells of claim 3 , wherein each of the floating gates includes an upper surface with a notch formed therein, and wherein the lower portion of the erase gate extends into each of the notches.
5. The pair of memory cells of claim 3 , further comprising:
a first control gate of conductive material disposed laterally between and insulated from the second portion of the erase gate and the first word line gate, and disposed vertically over and insulated from the first floating gate;
a second control gate of conductive material disposed laterally between and insulated from the second portion of the erase gate and the second word line gate, and disposed vertically over and insulated from the second floating gate.
6. The pair of memory cells of claim 1 , further comprising:
a control gate of conductive material disposed laterally between and insulated from the first and second word line gates, and disposed vertically over and insulated from the erase gate and the first and second floating gates.
7. A pair of memory cells comprising:
a semiconductor substrate having an upper surface;
first and second trenches formed into the upper surface and spaced apart from each other;
a first floating gate of conductive material disposed in the first trench and insulated from the substrate;
a second floating gate of conductive material disposed in the second trench and insulated from the substrate;
a first word line gate of conductive material disposed over and insulated from a portion of the upper surface that is adjacent to the first floating gate;
a second word line gate of conductive material disposed over and insulated from a portion of the upper surface that is adjacent to the second floating gate;
a source region formed in the substrate laterally between the first and second floating gates;
a first drain region formed in a portion of the upper surface adjacent to the first word line gate;
a second drain region formed in a portion of the upper surface adjacent to the second word line gate;
wherein a first channel region of the substrate extends from the source region to the first drain region, including extending at least under the first trench, along a side wall of the first trench, and along a portion of the upper surface disposed under the first word line gate; and
wherein a second channel region of the substrate extends from the source region to the second drain region, including extending at least under the second trench, along a side wall of the second trench, and along a portion of the upper surface disposed under the second word line gate;
a first erase gate of conductive material disposed over and insulated from the first floating gate, wherein the first word line gate is laterally adjacent to and insulated from the first erase gate;
a second erase gate of conductive material disposed over and insulated from the second floating gate, wherein the second word line gate is laterally adjacent to and insulated from the second erase gate.
8. The pair of memory cells of claim 7 , wherein the first trench only contains therein the first floating gate and insulation material that insulates the first floating gate from the substrate, and wherein the second trench only contains therein the second floating gate and insulation material that insulates the second floating gate from the substrate.
9. The pair of memory cells of claim 7 , further comprising:
a block of conductive material disposed over and in electrical contact with the source region, and disposed laterally between and insulated from the first and second erase gates.
10. The pair of memory cells of claim 7 , further comprising:
a block of conductive material disposed over and insulated from the source region, and disposed laterally between and insulated from the first and second erase gates.
11. A pair of memory cells comprising:
a semiconductor substrate having an upper surface;
first and second trenches formed into the upper surface and spaced apart from each other;
a first floating gate of conductive material disposed in the first trench and insulated from the substrate;
a second floating gate of conductive material disposed in the second trench and insulated from the substrate;
a first word line gate of conductive material disposed over and insulated from a portion of the upper surface that is adjacent to the first floating gate;
a second word line gate of conductive material disposed over and insulated from a portion of the upper surface that is adjacent to the second floating gate;
a source region formed in the substrate laterally between the first and second floating gates;
a first drain region formed in a portion of the upper surface adjacent to the first word line gate;
a second drain region formed in a portion of the upper surface adjacent to the second word line gate;
wherein a first channel region of the substrate extends from the source region to the first drain region, including extending at least under the first trench, along a side wall of the first trench, and along a portion of the upper surface disposed under the first word line gate; and
wherein a second channel region of the substrate extends from the source region to the second drain region, including extending at least under the second trench, along a side wall of the second trench, and along a portion of the upper surface disposed under the second word line gate;
an erase gate of conductive material disposed over and insulated from the first and second floating gates and insulated from the substrate.
12. The pair of memory cells of claim 11 , wherein the erase gate of conductive material is insulated from the first and second floating gates by an oxide, nitride, oxide layer.
13. The pair of memory cells of claim 11 , further comprising:
a first control gate of conductive material disposed over and insulated from the first floating gate, and laterally between and insulated from the erase gate and the first word line gate;
a second control gate of conductive material disposed over and insulated from the second floating gate, and laterally between and insulated from the erase gate and the second word line gate.
14. A method of forming a pair of memory cells, comprising:
forming spaced apart first and second trenches into an upper surface of a semiconductor substrate;
forming a first floating gate of conductive material in the first trench and insulated from the substrate;
forming a second floating gate of conductive material in the second trench and insulated from the substrate;
forming an erase gate of conductive material having a first portion extending into the upper surface, and disposed laterally between and insulated from the first and second floating gates;
forming a first word line gate of conductive material over and insulated from a portion of the upper surface that is adjacent to the first floating gate;
forming a second word line gate of conductive material over and insulated from a portion of the upper surface that is adjacent to the second floating gate;
forming a source region in the substrate laterally between the first and second floating gates and vertically under and insulated from the first portion of the erase gate;
forming a first drain region in a portion of the upper surface adjacent to the first word line gate;
forming a second drain region in a portion of the upper surface adjacent to the second word line gate;
wherein a first channel region of the substrate extends from the source region to the first drain region, including extending at least under the first trench, along a side wall of the first trench, and along a portion of the upper surface disposed under the first word line gate; and
wherein a second channel region of the substrate extends from the source region to the second drain region, including extending at least under the second trench, along a side wall of the second trench, and along a portion of the upper surface disposed under the second word line gate.
15. The method of claim 14 , wherein the first trench only contains therein the first floating gate and insulation material that insulates the first floating gate from the substrate, and wherein the second trench only contains therein the second floating gate and insulation material that insulates the second floating gate from the substrate.
16. The method of claim 14 , wherein the erase gate further comprises a second portion extending up and at least partially vertically over the first and second floating gates, and wherein each of the floating gates includes an upper surface with a notch formed therein with the lower portion of the erase gate extending into each of the notches.
17. The method of claim 16 , further comprising:
forming a first control gate of conductive material laterally between and insulated from the second portion of the erase gate and the first word line gate, and vertically over and insulated from the first floating gate;
forming a second control gate of conductive material laterally between and insulated from the second portion of the erase gate and the second word line gate, and vertically over and insulated from the second floating gate.
18. The method of claim 14 , further comprising:
forming a control gate of conductive material laterally between and insulated from the first and second word line gates, and vertically over and insulated from the erase gate and the first and second floating gates.
19. A method of forming a pair of memory cells, comprising:
forming spaced apart first and second trenches into an upper surface of a semiconductor substrate;
forming a first floating gate of conductive material in the first trench and insulated from the substrate;
forming a second floating gate of conductive material in the second trench and insulated from the substrate;
forming a first word line gate of conductive material over and insulated from a portion of the upper surface that is adjacent to the first floating gate;
forming a second word line gate of conductive material over and insulated from a portion of the upper surface that is adjacent to the second floating gate;
forming a source region in the substrate laterally between the first and second floating gates;
forming a first drain region in a portion of the upper surface adjacent to the first word line gate;
forming a second drain region in a portion of the upper surface adjacent to the second word line gate;
wherein a first channel region of the substrate extends from the source region to the first drain region, including extending at least under the first trench, along a side wall of the first trench, and along a portion of the upper surface disposed under the first word line gate; and
wherein a second channel region of the substrate extends from the source region to the second drain region, including extending at least under the second trench, along a side wall of the second trench, and along a portion of the upper surface disposed under the second word line gate;
forming a first erase gate of conductive material over and insulated from the first floating gate, wherein the first word line gate is laterally adjacent to and insulated from the first erase gate;
forming a second erase gate of conductive material over and insulated from the second floating gate, wherein the second word line gate is laterally adjacent to and insulated from the second erase gate.
20. The method of claim 19 , wherein the first trench only contains therein the first floating gate and insulation material that insulates the first floating gate from the substrate, and wherein the second trench only contains therein the second floating gate and insulation material that insulates the second floating gate from the substrate.
21. The method of claim 19 , further comprising:
forming a block of conductive material over and in electrical contact with the source region, and laterally between and insulated from the first and second erase gates.
22. The method of claim 19 , further comprising:
forming a block of conductive material over and insulated from the source region, and laterally between and insulated from the first and second erase gates.
23. A method of forming a pair of memory cells, comprising:
forming spaced apart first and second trenches into an upper surface of a semiconductor substrate;
forming a first floating gate of conductive material in the first trench and insulated from the substrate;
forming a second floating gate of conductive material in the second trench and insulated from the substrate;
forming a first word line gate of conductive material over and insulated from a portion of the upper surface that is adjacent to the first floating gate;
forming a second word line gate of conductive material over and insulated from a portion of the upper surface that is adjacent to the second floating gate;
forming a source region in the substrate laterally between the first and second floating gates;
forming a first drain region in a portion of the upper surface adjacent to the first word line gate;
forming a second drain region in a portion of the upper surface adjacent to the second word line gate;
wherein a first channel region of the substrate extends from the source region to the first drain region, including extending at least under the first trench, along a side wall of the first trench, and along a portion of the upper surface disposed under the first word line gate; and
wherein a second channel region of the substrate extends from the source region to the second drain region, including extending at least under the second trench, along a side wall of the second trench, and along a portion of the upper surface disposed under the second word line gate;
forming an erase gate of conductive material over and insulated from the first and second floating gates and insulated from the substrate.
24. The method of claim 23 , wherein the erase gate of conductive material is insulated from the first and second floating gates by an oxide, nitride, oxide layer.
25. The method of claim 23 , further comprising:
forming a first control gate of conductive material over and insulated from the first floating gate, and between and insulated from the erase gate and the first word line gate;
forming a second control gate of conductive material over and insulated from the second floating gate, and laterally between and insulated from the erase gate and the second word line gate.