IP Library › Granted Patent US 10,644,217
Granted Patent B2
US 10,644,217 · App. 16/251,569 · Granted May 5, 2020

Flip chip integration on qubit chips

Inventors: Sami Rosenblatt (White Plains, NY); Jason S. Orcutt (Katonah, NY); Martin O. Sandberg (Ossining, NY); Markus Brink (White Plains, NY); Vivekananda P. Adiga (Ossining, NY); Nicholas T. Bronn (Long Island City, NY)
Assignee: International Business Machines Corporation
H01L39/025G06N10/00H01L25/0657H01L25/50H01L27/18H01L39/045H01L39/223H01L39/2493H01L23/544H01L2223/54426H01L2224/131H01L2224/16145H01L2224/81203H01L2224/81815H01L2225/06513H01L2225/06534H01L2225/06541H01L2225/06593
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Quick Facts
Patent No.
US 10,644,217
App. No.
16/251,569
Granted
May 5, 2020
Kind
B2
Abstract

A quantum bit (qubit) flip chip assembly may be formed when a qubit it formed on a first chip and an optically transmissive path is formed on a second chip. The two chips may be bonded. The optically transmissive path may provide optical access to the qubit on the first chip.

Claims (26)

1. A method for forming a quantum bit (qubit) flip-chip assembly, the method comprising:

forming a qubit on a first chip;

forming an optically transmissive path in a second chip; and

bonding the first chip to the second chip; and

wherein the optically transmissive path is located adjacent to the qubit.

2. The method of claim 1 , wherein the path has an aperture with a diameter large enough to allow for treatment of the qubit.

3. The method of claim 1 , wherein the optically transmissive path has an aperture of 100 microns or less.

4. The method of claim 1 , further comprising laser annealing the qubit by applying a laser through a surface of the qubit chip that is opposite the second chip.

5. The method of claim 1 , further comprising ion etching the qubit.

6. The method of claim 1 , wherein the forming the optically transmissive path comprises drilling, using a high-power laser beam, the second chip to form a through-hole in the second chip.

7. The method of claim 6 , wherein the etching comprises deep-reactive ion etching.

8. The method of claim 6 , wherein the etching comprises a chemical etch, and wherein the chemical etch is a tetramethylammonium hydroxide (TMAH) etch.

9. The method of claim 1 , wherein the forming the optically transmissive path comprises etching a through-hole in the second chip.

10. The method of claim 1 , wherein the second chip comprises a transparent substrate.

11. The method of claim 10 , wherein the transparent substrate is Magnesiumoxide (MgO).

12. A flip chip apparatus comprising:

a first chip comprising a qubit; and

a second chip bonded to the first chip, wherein an optically transmissive path in the second chip provides for optical access to the qubit on the first chip.

13. The apparatus of claim 12 , wherein the second chip comprises a transparent substrate.

14. The apparatus of claim 13 , wherein the transparent substrate is sapphire.

15. The apparatus of claim 12 , wherein the optically transmissive path has a diameter large enough to allow for treatment of one or more of the plurality of qubits.

16. The apparatus of claim 12 , wherein the qubit is accessible for laser annealing via the optically transmissive path.

17. The apparatus of claim 12 , wherein the optically transmissive path of the second chip is aligned with the qubit on the first chip.

18. The apparatus of claim 12 , wherein the optically transmissive path is formed with a chemical etch.

19. The apparatus of claim 12 , wherein the optically transmissive path is formed using a high-power laser beam.

20. The apparatus of claim 12 , wherein the first chip is comprised of a transparent substrate.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 18, 2019
From: ROSENBLATT, SAMI; ORCUTT, JASON S.; SANDBERG, MARTIN O.; BRINK, MARKUS; ADIGA, VIVEKANANDA P.; BRONN, NICHOLAS T.
To: INTERNATIONAL BUSINESS MACHINES CORPORATION
Reel/Frame 048058/0552 →
Continuity (2)
Continuation 15823675 · Nov 28, 2017
Related Publication 20190165241A1 · May 30, 2019
Cited By (4)
US 12,414,482 US 12,642,137 US 12,718,975 US 12,736,790