Method of forming an hermetic seal on electronic and optoelectronic packages
A method for forming hermetic seals between the cap and sub-mount for electronic and optoelectronic packages includes the formation of metal mounds on the sealing surfaces. Metal mounds, as precursors to a metal hermetic seal between the cap and sub-mount of a sub-mount assembly, facilitates the evacuation and purging of the volume created within cap and sub-mount assemblies prior to formation of the hermetic seal. The method is applied to discrete cap and sub-mount assemblies and also at the wafer level on singulated and non-singulated cap and sub-mount wafers. The method that includes the formation of the hermetic seal provides an inert environment for a plurality of electrical, optoelectrical, and optical die that are attached within an enclosed volume of the sub-mount assembly.
1. A method comprising
heating an interface wall between two substrates in a conditioned ambient,
wherein the conditioned ambient is formed by at least one of evacuating gases around the two substrates, or
flowing an inactive gas or an inert gas to a vicinity of the two substrates, or
placing the two substrates in a chamber and evacuating or flowing an inactive gas or an inert gas in the chamber,
wherein the interface wall comprises a close-loop boundary defining a volume between the substrates,
wherein the interface wall comprises a height variation at at least two locations to form an opening configured for removing air in the volume to the conditioned ambient,
until the interface wall forms a hermetic seal for the volume.
2. A method comprising as in claim 1
wherein heating the interface wall in a conditioned ambient comprises flowing a hot inactive gas or a hot inert gas to a vicinity of the two substrates.
3. A method comprising as in claim 1
wherein heating the interface wall in a conditioned ambient comprises
forming the conditioned ambient,
heating at least one of the interface wall, or one of the two substrates.
4. A method comprising as in claim 3
wherein heating at least one of the interface wall, or one of the two substrates comprises
heating the conditioned ambient, or
blowing a hot gas toward at least one of the interface wall, or one of the two substrates, or
IR heating directed toward at least one of the interface wall, or one of the two substrates, or
heating a chamber in which the substrates are located, or
heating a plate on which one of the two substrates is located.
5. A method comprising
forming a wall on a substrate,
wherein the wall comprises a close-loop boundary defining an area on the substrate,
wherein the wall comprises a first portion having a higher height than a second portion,
forming a boundary line on a second substrate,
contacting the first and second substrates so that the boundary line interfaces with the wall, and the second substrate contacts the first portion but not the second portion,
conditioning the ambient around the first and second substrates,
wherein conditioning the ambient comprises at least one of
evacuating gases around the two substrates, or
flowing an inactive gas or an inert gas to a vicinity of the two substrates, or
placing the two substrates in a chamber and evacuating or flowing an inactive gas or an inert gas in the chamber,
heating the wall until the wall interact with the boundary line to form a hermetic seal.
6. A method comprising as in claim 5
wherein the separation between the second portion and the second substrate is configured to provide a fluid communication between the conditioned ambient and the area.
7. A method comprising as in claim 5
wherein the wall comprises multiple separated columns contacting the two substrates.
8. A method comprising as in claim 5
wherein the wall comprises columns with different heights.
9. A method comprising as in claim 5
wherein forming the hermetic seal comprises reflowing the wall so that the second portion contacts the second substrate.
10. A method comprising
forming a first close-loop boundary line on a first substrate, wherein the first boundary line comprises a metal or an alloy,
forming a second close-loop boundary line on a second substrate, wherein the second boundary line comprises a metal or an alloy,
forming multiple solder balls on the first boundary line,
contacting the first and second substrates so that the second boundary line interfaces with the multiple solder balls,
conditioning an ambient in a vicinity of the first and second substrates,
wherein conditioning the ambient comprises at least one of
evacuating gases around the two substrates, or
flowing an inactive gas or an inert gas to a vicinity of the two substrates, or
placing the two substrates in a chamber and evacuating or flowing an inactive gas or an inert gas in the chamber,
heating the multiple solder balls until the multiple solder balls interact with the first and second boundary lines to form a hermetic seal.
11. A method comprising as in claim 10
wherein the steps of conditioning the ambient and heating the solder balls is combined by flowing a hot inactive gas or a hot inert gas to a vicinity of the solder balls.
12. A method comprising as in claim 10
wherein conditioning the ambient comprises at least one of
evacuating gases around the two substrates, or
flowing an inactive gas or an inert gas to a vicinity of the two substrates, or
placing the two substrates in a chamber and evacuating or flowing an inactive gas or an inert gas in the chamber.
13. A method comprising as in claim 10
wherein heating the solder balls comprises at least one of
heating the conditioned ambient, or
blowing a hot gas toward a vicinity of the solder balls, or
IR heating directed toward a vicinity of the solder balls, or
heating at least one of the first substrate or the second substrate, or
heating a chamber or the ambient inside the chamber or the walls of the chamber in which the first and second substrates are located, or
heating a plate on which the first or second substrates is located.
14. A method comprising as in claim 10
wherein the solder balls comprise an alloy of at least one of tin, copper, bismuth, lead, silver, gold, or indium.
15. A method comprising as in claim 10
wherein the first and second boundary lines comprise a material selected from the group consisting of Al, Ag, Ni, Au, Pd, or alloys thereof.
16. A method comprising as in claim 10
wherein forming the hermetic seal comprises reflowing the solder balls to fuse the solder balls together with the first and second boundary lines.
17. A method comprising as in claim 10
wherein the first boundary line is configured to surround at least one of an interface of an optical element, an optical element, or a semiconductor device.
18. A method comprising as in claim 10
wherein at least one of the substrates comprises a recess.
19. A method comprising as in claim 10
wherein contacting the first and second substrates comprises
tacking the second substrate with one or more solder balls of the multiple solder balls,
wherein the one or more solder balls have a higher height than other solder balls.