Imaging device and imaging system
An imaging device includes pixels each including a photoelectric converter that generates charges by photoelectric conversion, a first transfer transistor that transfers charges of the photoelectric converter to a first holding portion, a second transfer transistor that transfers charges of the first holding portion to a second holding portion, and an amplifier unit that outputs a signal based on charges held by the second holding portion. The first transfer transistor is configured to form a potential well for the charges between the photoelectric converter and the first holding portion when the first transistor is in an on-state. The maximum charge amount Q PD generated by the photoelectric converter during one exposure period, a saturation charge amount Q MEM_SAT of the first holding portion, and the maximum charge amount Q GS that can be held in the potential well are in a relationship of: Q PD <Q GS ≤Q MEM_SAT .
1. An imaging device comprising:
a plurality of pixels each including
a photoelectric converter that generates charges by photoelectric conversion;
a first transfer transistor that transfers charges of the photoelectric converter to a first holding portion;
a second transfer transistor that transfers charges of the first holding portion to a second holding portion and
an amplifier unit that outputs a signal based on charges held by the second holding portion,
wherein the first transfer transistor is configured to form a potential well for charges between the photoelectric converter and the first holding portion when the first transistor is in an on-state, and
wherein a maximum charge amount Q PD generated by the photoelectric converter during one exposure period, a saturation charge amount Q MEM_SAT of the first holding portion, and a maximum charge amount Q GS that can be held in the potential well are in a relationship of:
Q PD <Q GS ≤Q MEM_SAT .
2. The imaging device according to claim 1 further comprising a transfer control unit configured to control the first transfer transistor so as to transfer charges generated by the photoelectric converter during the one exposure period from the photoelectric converter to the first holding portion by N times of transfer operations,
wherein the charge amount Q PD is expressed by:
Q PD =Q PD_SAT ×N,
where a saturation charge amount of the photoelectric converter is Q PD_SAT .
3. The imaging device according to claim 1 , wherein the potential well is formed on the first holding portion side of a region between the photoelectric converter and the first holding portion.
4. The imaging device according to claim 1 ,
wherein the photoelectric converter includes a first semiconductor region of a first conductivity type and a second semiconductor region of a second conductivity type that is provided in contact with a bottom of the first semiconductor region and corresponds to an accumulation layer of the charges,
wherein the first holding portion includes a third semiconductor region of the first conductivity type and a fourth semiconductor region of the second conductivity type that is provided in contact with a bottom of the third semiconductor region and corresponds to a holding layer of the charges, and
wherein an impurity concentration of the fourth semiconductor region is higher than an impurity concentration of the second semiconductor region.
5. The imaging device according to claim 4 , wherein the second semiconductor region and the fourth semiconductor region have a region overlapping with a gate electrode of the first transfer transistor in a plan view.
6. The imaging device according to claim 4 further comprising a fifth semiconductor region of the second conductivity type provided in contact with an end on the photoelectric converter side of the fourth semiconductor region,
wherein an impurity concentration of the fifth semiconductor region is higher than the impurity concentration of the fourth semiconductor region.
7. The imaging device according to claim 6 , wherein an end of a region where the fifth semiconductor region and a gate electrode of the first transfer transistor to overlap each other in a plan view is located closer to the photoelectric converter side than an end of a region where the fourth semiconductor region and the gate electrode overlap each other in a plan view.
8. The imaging device according to claim 6 , wherein the impurity concentration of the fifth semiconductor region is set so that the charge amount Q GS is a predetermined value.
9. The imaging device according to claim 6 , wherein a region where the fifth semiconductor region is formed is set so that the charge amount Q GS is a predetermined value.
10. The imaging device according to claim 1 , wherein the charge amount Q GS is controlled by a voltage applied to a gate of the first transfer transistor.
11. An imaging system comprising:
the imaging device according to claim 1 ; and
a signal processing unit that processes a signal output from the imaging device.
12. A movable object comprising:
the imaging device according to claim 1 ;
a distance information acquisition unit that acquires, from a parallax image based on signals output from the pixels of the imaging device, distance information on a distance to an object; and
a control unit that controls the movable object based on the distance information.