Method for integrating a light emitting device
Light emitting devices and methods of integrating micro LED devices into light emitting device are described. In an embodiment a light emitting device includes a reflective bank structure within a bank layer, and a conductive line atop the bank layer and elevated above the reflective bank structure. A micro LED device is within the reflective bank structure and a passivation layer is over the bank layer and laterally around the micro LED device within the reflective bank structure. A portion of the micro LED device and a conductive line atop the bank layer protrude above a top surface of the passivation layer.
1. A display panel pixel structure comprising:
a substrate including a Vss line and a planarization layer over the Vss line;
a plurality of light emitting diode (LEDs) over the planarization layer and within a pixel area of the display panel;
a patterned dam layer over the planarization layer;
a patterned conductive layer on top of the patterned dam layer, wherein the patterned conductive layer is in electrical contact the Vss line; and
a top conductive electrode layer that electrically connects the plurality of LEDs with the patterned conductive layer.
2. The display panel of claim 1 , further comprising a passivation layer over the substrate and laterally around the plurality of LEDs, wherein the top conductive electrode layer is over the passivation layer.
3. The display panel of claim 2 , wherein the passivation layer comprises a thermoset material.
4. The display panel of claim 3 , wherein the thermoset material is an acrylic.
5. The display panel of claim 2 , wherein each LED comprises a vertical p-n diode between a bottom contact and a top contact.
6. The display panel of claim 5 , wherein the substrate comprises a plurality of bottom electrodes, and each LED is bonded to a corresponding bottom electrode.
7. The display panel of claim 6 , wherein each LED is bonded to a corresponding bottom electrode with a solder material.
8. The display panel of claim 6 , wherein each LED has a maximum width of 1 to 100 μm.
9. The display panel of claim 6 , wherein each LED has a maximum width of 1 to 20 μm.
10. The display panel of claim 6 , wherein each LED has a maximum width of 1 to 10 μm.
11. The display panel of claim 6 , further comprising working circuitry in the substrate and connected to the plurality of bottom electrodes.
12. The display panel of claim 6 , wherein the patterned conductive layer spans along an opening of the patterned dam layer.
13. The display panel of claim 6 , wherein a top surface of the passivation layer is below of top surface of each LED and a top surface of the patterned dam layer.
14. The display panel of claim 13 , wherein the top surface of the passivation layer is a level surface.
15. The display panel of claim 6 :
a second Vss line, wherein the planarization layer is over the second Vss line;
a second plurality of LEDs over the planarization layer and within the pixel area of the display panel;
a second patterned dam layer over the planarization layer;
a second patterned conductive layer on top of the second patterned dam layer, wherein the second patterned conductive layer is in electrical contact the second Vss line; and
a second top conductive electrode layer that electrically connects the second plurality of LEDs with the second patterned conductive layer.
16. The display panel of claim 15 , wherein the second patterned conductive layer spans along a second opening of the second patterned dam layer.
17. The display panel of claim 16 , wherein a top surface of the passivation layer is below of top surface of each LED and a top surface of the patterned dam layer.
18. The display panel of claim 17 , wherein the top surface of the passivation layer is a level surface.