IP Library › Granted Patent US 10,424,569
Granted Patent B2
US 10,424,569 · App. 16/285,122 · Granted Sep 24, 2019

Micro light-emitting-diode display panel and manufacturing method thereof

Inventor: Macai Lu (Shenzhen, CN)
Assignee: SHENZHEN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.
H01L25/167H01L21/6835H01L22/20H01L22/30H01L25/0753H01L27/1214H01L33/0079H01L33/36H01L33/382H01L33/385H01L33/44H01L33/483H01L33/62H01L21/67144H01L33/0095H01L33/20H01L2221/68322H01L2221/68354H01L2221/68368H01L2221/68386H01L2933/0016H01L2933/0025H01L2933/0066
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Quick Facts
Patent No.
US 10,424,569
App. No.
16/285,122
Granted
Sep 24, 2019
Kind
B2
Abstract

The present invention provides a micro light emitting-diode display panel and a manufacturing method thereof. The first electrode contact and the second electrode contact are alternatively disposed on the base substrate of the micro light-emitting-diode display panel, and the first electrode contact and the second electrode contact are respectively connected with the bottom electrode and the connection electrode of the micro light-emitting-diode. The connection electrode is also connected with the top electrode of the micro light-emitting-diode, and the micro light-emitting-diodes can be immediately inspected after the micro-light-emitting-diode is transferred, to reduce the difficulty of detection and product repair, and to improve the product yield.

Claims (5)

1. A micro light-emitting-diode display panel, comprising a base substrate, a plurality of sub-pixel regions disposed in an array arrangement on the base substrate, a first electrode contact and a second electrode contact alternatively disposed within each of the sub-pixel regions, and a micro light-emitting-diode disposed on the first electrode contact and the second electrode contact within each of the sub-pixel regions;

the micro light-emitting-diode comprising: a bottom electrode contacting the first electrode contact, an LED semiconductor layer disposed above the bottom electrode and contacting the bottom electrode, a top electrode disposed on the LED semiconductor layer and contacting the LED semiconductor layer, an insulation-protective layer surrounding the LED semiconductor layer, and a connection electrode disposed on the insulation-protective layer and connecting the top electrode and the second electrode contact.

2. The micro light-emitting-diode display panel according to claim 1 , further comprising: a TFT layer disposed between the base substrate, and the first electrode contact and the second electrode contact;

the TFT layer comprising: an active layer disposed on the base substrate, a gate insulating layer covering the active layer and the base substrate, a gate electrode disposed on the gate insulating layer above the active layer, an intermediate insulating layer covering the gate electrode and the gate insulating layer, a source electrode and a drain electrode disposed on the intermediate insulating layer and contacting two ends of the active layer, and a passivation layer covering the source electrode, the drain electrode and the intermediate insulating layer; the second electrode contact contacting the source electrode.

3. The micro light-emitting-diode display panel according to claim 2 , further comprising: a pixel definition layer disposed on the passivation layer and located around the micro light-emitting-diode, and a protective layer covering the passivation layer, the first electrode contact, the second electrode contact, the micro light-emitting-diode, and the pixel definition layer.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 25, 2019
From: LU, MACAI
To: SHENZHEN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.
Reel/Frame 048432/0853 →
Priority Claims (1)
CN 2017 1 0370730 · May 23, 2017 · national
Continuity (2)
Division 15548097 · Aug 2, 2017
Related Publication 20190189604A1 · Jun 20, 2019
Cited By (3)
US 12,341,139 US 12,696,606 US 12,727,294