Light emitting device
A light emitting device including a substrate including a cell region, a peripheral region surrounding at least a portion of the cell region, a light source disposed in the cell region, a light shield layer disposed in the peripheral region, a position of an upper surface of the light shield layer being higher than a position of an upper surface of the light source. The peripheral region includes a cavity extending inside the substrate, which is filled by the light shield layer. The cavity has a depth less than 70 μm.
1 . A light emitting device comprising:
a substrate being a single layer and including an upper surface and a lower surface opposing the upper surface,
wherein the upper surface includes a cell region and a peripheral region surrounding at least a portion of the cell region;
a light source disposed on the cell region of the upper surface of the substrate;
a light shield layer disposed on the peripheral region;
an insulation layer disposed on the light shield layer and covering an upper surface of the light source;
wherein a position of an upper surface of the insulation layer is higher than a position of an upper surface of the light source and a position of an upper surface of the light shield layer is flush with the position of an upper surface of the light source,
wherein the peripheral region includes a cavity extending inside the substrate from the upper surface, and the cavity is filled by the light shield layer,
wherein a depth of the cavity is between 25 pm and 70 pm and a longest width of the cavity at the upper surface of the substrate is less than a width of the light source and an angle between two sides of the cavity is between 40 and 80 degrees.
2 . The light emitting device of claim 1 , wherein the cavity extends across the substrate in a first direction in a top view of the substrate.
3 . The light emitting device of claim 1 , wherein the light shield layer includes at least one metal of Ti, Ni, Al, Ag, Cr, or at least one of a photoresist, epoxy, PDMS, or a black matrix.
4 . The light emitting device of claim 1 , wherein the substrate includes at least one of a sapphire substrate, a SiC substrate, a GaN substrate, an InGaN substrate, an AlGaN substrate, an AlN substrate, a Ga 2 O 3 substrate, a GaAs substrate, a Si substrate, a flexible substrate, or a circuit board.
5 . The light emitting device of claim 1 , wherein the light source further includes a first pad electrically coupled to a first conductivity-type semiconductor layer of the light source and a second pad electrically coupled to an ohmic layer of the light source.