Light-emitting device

1. A light-emitting device, comprising:

a substrate;

a plurality of light-emitting cells disposed on the substrate so as to be spaced apart from each other; and

a connection line configured to electrically interconnect neighboring light-emitting cells,

wherein each of the light-emitting cells comprises:

a light-emitting structure comprising a first semiconductor layer, an active layer, and a second semiconductor layer disposed on the substrate; and

first and second electrodes configured to be electrically connected to the first and second semiconductor layers respectively,

wherein the light-emitting cells comprise:

a first power cell configured to receive first power via the first electrode; and

a second power cell configured to receive second power via the second electrode,

wherein the first electrode in the first power cell has a first planar shape different from a second planar shape of the second electrode in the second power cell, and

wherein each of the light-emitting cells excluding the first power cell further comprises a contact hole configured to expose the first semiconductor layer in the light-emitting structure.

2. The light-emitting device according to claim 1 , further comprising a first insulation layer disposed between the connection line and the neighboring light-emitting cells to electrically insulate the connection line and the neighboring light-emitting cells from each other.

3. The light-emitting device according to claim 2 , further comprising:

a first bonding pad configured to be electrically connected to the first electrode;

a second bonding pad configured to be electrically connected to the second electrode; and

a second insulation layer disposed between the first bonding pad and the second electrode to electrically insulate the first bonding pad and the second electrode from each other.

4. The light-emitting device according to claim 3 , wherein the first electrode is connected to the first bonding pad through a plurality of first through-holes, which pass through the second insulation layer, the second semiconductor layer, and the active layer, and

wherein the second electrode is connected to the second bonding pad through a plurality of second through-holes, which pass through the second insulation layer.

5. The light-emitting device according to claim 4 , wherein the first planar shape comprises at least one of a planar arrangement form of the first through-holes, a number of the first through-holes, a planar shape of each of the first through-holes, a distance between the first through-holes, or a planar size of each of the first through-holes, and

wherein the second planar shape comprises at least one of a planar arrangement form of the second through-holes, a number of the second through-holes, a planar shape of each of the second through-holes, a distance between the second through-holes, or a planar size of each of the second through-holes.

6. The light-emitting device according to claim 5 , wherein the number of the first through-holes in the first planar shape and the number of the second through-holes in the second planar shape are different from each other.

7. The light-emitting device according to claim 5 , wherein the number of the first through-holes in the first planar shape and the number of the second through-holes in the second planar shape are the same.

8. The light-emitting device according to claim 5 , wherein the first through-holes in the first planar shape are arranged in at least one direction of a first direction or a second direction, which crosses a thickness direction of the light-emitting structure, and

wherein the first through-holes are arranged at a constant distance.

9. The light-emitting device according to claim 5 , wherein the second through-holes in the second planar shape are arranged in at least one direction of a first direction or a second direction, which crosses a thickness direction of the light-emitting structure, and

wherein the second through-holes are arranged at a constant distance.

10. The light-emitting device according to claim 5 ,

wherein the connection line is configured to be electrically connected to the second semiconductor layer of one of the neighboring light-emitting cells and is configured to be electrically connected to the first semiconductor layer through the contact hole of a remaining one of the neighboring light-emitting cells.

11. The light-emitting device according to claim 10 , wherein the contact hole comprises a plurality of contact holes disposed parallel to each other and spaced apart from each other in a direction, which crosses a thickness direction of the light-emitting structure.

12. The light-emitting device according to claim 11 , wherein the connection line comprises:

a connection body configured to be electrically spaced apart from a lateral portion of the light-emitting structure of one of the neighboring light-emitting cells by the first insulation layer and configured to be electrically connected to the second electrode of the one of the neighboring light-emitting cells; and

a plurality of connection branches extending from the connection body so as to be electrically connected to the first semiconductor layer through the contact holes included in a remaining one of the neighboring light-emitting cells.

13. The light-emitting device according to claim 12 , wherein the connection branches comprise a plurality of first connection branches extending from the connection body in a first direction, which crosses the thickness direction, and disposed so as to be spaced apart from each other in a second direction, which crosses each of the first direction and the thickness direction.

14. The light-emitting device according to claim 12 , wherein the connection branches comprise:

a second connection branch extending from the connection body so as to be disposed in a second direction, which crosses the thickness direction; and

a third connection branch extending from the second connection branch so as to be disposed in a first direction, which crosses each of the thickness direction and the second direction.

15. The light-emitting device according to claim 12 , wherein each of the connection branches has a striped planar shape.

16. The light-emitting device according to claim 15 , wherein the second through-holes are arranged in the direction between the connection branches.

17. The light-emitting device according to claim 12 , wherein the connection branches are disposed so as to overlap the second bonding pad in the thickness direction.

18. The light-emitting device according to claim 12 , wherein the connection branches are disposed so as not to overlap the second bonding pad in the thickness direction.

19. The light-emitting device according to claim 18 , wherein the connection branches are disposed on an edge of the second power cell.

20. A light-emitting device, comprising:

a substrate;

a plurality of light-emitting cells disposed on the substrate so as to be spaced apart from each other; and

a connection line configured to electrically interconnect neighboring light-emitting cells,

wherein each of the light-emitting cells comprises:

a light-emitting structure comprising an n-type semiconductor layer, an active layer, and a p-type semiconductor layer disposed on the substrate; and

n-type and p-type electrodes configured to be electrically connected to the n-type and p-type semiconductor layers respectively,

wherein the light-emitting cells comprises:

a negative power cell configured to receive a negative voltage via an n-type bonding pad connected to the n-type electrode; and

a positive power cell configured to receive a positive voltage via a p-type bonding pad connected to the p-type electrode,

wherein each of the light-emitting cells excluding the negative power cell further comprises a contact hole passing through the p-type semiconductor layer and the active layer to expose the n-type semiconductor layer,

wherein the connection line is configured to be electrically connected to the n-type semiconductor layer through a respective one of the contact holes, and

wherein the contact hole is disposed so as not to overlap the p-type bonding pad in a thickness direction of the light-emitting structure.