Light emitting element

1. A light-emitting element, comprising:

a substrate;

a plurality of light-emitting cells arranged on the substrate and spaced apart from each other, each of the light-emitting cells comprising a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer sequentially disposed on the substrate;

a connection wire configured to electrically interconnect the light-emitting cells;

a first bonding pad electrically connected to the second conductive semiconductor layer of a first light-emitting cell among the light-emitting cells; and

a second bonding pad electrically connected to the first conductive semiconductor layer of a second light-emitting cell among the light-emitting cells,

wherein at least one remaining light-emitting cell, excluding the second light-emitting cell, among the light emitting cells, has a planar area smaller than a planar area of the second light-emitting cell,

wherein the light-emitting cells are separated from each other on a plane by a boundary area located around the light-emitting cells,

wherein the light-emitting cells comprise:

first adjacent light-emitting cells adjacent to each other in a first direction; and

second adjacent light-emitting cells adjacent to each other in the first direction and adjacent to the first adjacent light-emitting cells in a second direction orthogonal to the first direction,

wherein the boundary area comprises:

a first boundary area disposed between the first adjacent light-emitting cells; and

a second boundary area disposed between the second adjacent light-emitting cells and spaced apart from the first boundary area in the first direction, and

wherein all boundary areas which are disposed between the light-emitting cells adjacent to each other in the first direction among the plurality of light-emitting cells are spaced apart from each other in the first direction.

2. The light-emitting element according to claim 1 , wherein a uniformity of planar areas of the active layers of the light-emitting cells ranges from 0.01% to 1%.

3. The light-emitting element according to claim 2 , wherein the uniformity of the planar areas of the active layers of the light-emitting cells is 0.03%.

4. The light-emitting element according to claim 2 , wherein the at least one remaining light-emitting cell comprises a plurality of remaining light-emitting cells, and planar areas of the remaining light-emitting cells are different within the range of the uniformity.

5. The light-emitting element according to claim 1 , wherein the second light-emitting cell has a horizontal width greater than a horizontal width of the at least one remaining light-emitting cell and a vertical width equal to a vertical width of the at least one remaining light-emitting cell.

6. The light-emitting element according to claim 1 , wherein the second light-emitting cell has a horizontal width greater than a horizontal width of the at least one remaining light-emitting cell and a vertical width greater than a vertical width of the at least one remaining light-emitting cell.

7. The light-emitting element according to claim 1 , wherein one or more of the light-emitting cells have a major-axis or minor-axis direction different from a major-axis or minor-axis direction of the remaining light-emitting cells among the light-emitting cells, and a major-axis or minor-axis direction of the second light-emitting cell is different from a major-axis or minor-axis direction of the first light-emitting cell.

8. A light-emitting element comprising:

a substrate;

first to N th light-emitting cells disposed on the substrate and spaced apart from each other (here, “N” is a positive integer of 2 or more);

first to N−1 th connection wires configured to electrically interconnect the first to N th light-emitting cells;

a first bonding pad located in the first light-emitting cell among the first to N th light-emitting cells; and

a second bonding pad located in the N th light-emitting cell among the first to N th light-emitting cells,

wherein each light-emitting cell, excluding the N th light-emitting cell, among the first to N th light-emitting cells has a first planar area as follows:

Ai

′

=

AR

-

α

(

N

-

1

)

(here, “Ai′” indicates the first planar area, “AR” indicates the reference planar area, and “α” indicates the incremental amount),

wherein the first to N th light-emitting cells are separated from each other on a plane by a boundary area located around the first to N th light-emitting cells,

wherein the first to N th light-emitting cells comprise:

first adjacent light-emitting cells adjacent to each other in a first direction; and

second adjacent light-emitting cells adjacent to each other in the first direction and adjacent to the first adjacent light-emitting cells in a second direction orthogonal to the first direction,

wherein the boundary area comprises:

a first boundary area disposed between the first adjacent light-emitting cells; and

a second boundary area disposed between the second adjacent light-emitting cells and spaced apart from the first boundary area in the first direction, and

wherein all of boundary areas which are disposed between the light-emitting cells adjacent to each other in the first direction among the first to N th light-emitting cells are spaced apart from each other in the first direction.

9. The light-emitting element according to claim 8 , wherein each of the first to N th light-emitting cells comprises:

an n-type semiconductor layer disposed on the substrate;

an active layer disposed on the n-type semiconductor layer;

a p-type semiconductor layer disposed on the active layer;

an n-type electrode disposed on the n-type semiconductor layer that is exposed by mesa etching the p-type semiconductor layer and the active layer; and

a p-type electrode disposed on the p-type semiconductor layer.

10. The light-emitting element according to claim 8 , wherein one or more of the first to N th light-emitting cells have a major-axis or minor-axis direction different from a major-axis or minor-axis direction of the remaining light-emitting cells among the first to N th light-emitting cells, and a major-axis or minor-axis direction of the N th light-emitting cell is different from a major-axis or minor-axis direction of the first light-emitting cell.

11. The light-emitting element according to claim 2 , wherein the at least one remaining light-emitting cell comprises a plurality of remaining light-emitting cells, and

wherein planar areas of the remaining light-emitting cells are the same.

12. The light-emitting element according to claim 2 , wherein a first planar area of the at least one remaining light-emitting cell, excluding the second light-emitting cell, among the light-emitting cells, and a second planar area of the second light-emitting cell have a relationship as follows:

AN

′

-

Ai

′

=

α

⁢

⁢

N

(

N

-

1

)

where, “Ai′” indicates the first planar area, 1≤i≤N−1, “AN′” indicates the second planar area, “N” indicates a total number of light-emitting cells and is a positive integer of 2 or more, and “α” indicates a planar area of the second bonding pad.

13. The light-emitting element according to claim 1 , wherein the second light-emitting cell has a vertical width greater than a vertical width of the at least one remaining light-emitting cell and a horizontal width equal to a horizontal width of the at least one remaining light-emitting cell.

14. The light-emitting element according to claim 1 , wherein the first conductive semiconductor layer is an n-type semiconductor layer, the second conductive semiconductor layer is a p-type semiconductor layer, and each of the light-emitting cells has a horizontal bonding structure.

15. The light-emitting element according to claim 8 , wherein a second planar area of the N th light-emitting cell is greater than a reference planar area by an incremental amount.

16. The light-emitting element according to claim 15 , wherein a uniformity of planar areas of the active layers of the first to N th light-emitting cells ranges from 0.01% to 1%.

17. The light-emitting element according to claim 15 , wherein the incremental amount is equal to a planar area of the second bonding pad.

18. A light-emitting element, comprising:

a substrate;

a plurality of light-emitting cells arranged on the substrate and spaced apart from each other, each of the light-emitting cells comprising a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer sequentially disposed on the substrate;

a connection wire configured to electrically interconnect the light-emitting cells;

a first bonding pad electrically connected to the second conductive semiconductor layer of a first light-emitting cell among the light-emitting cells; and

a second bonding pad electrically connected to the first conductive semiconductor layer of a second light-emitting cell among the light-emitting cells,

wherein the light-emitting cells are separated from each other on a plane by a boundary area located around the light-emitting cells,

wherein the boundary area comprises a first boundary disposed between the light-emitting cells adjacent to each other in a first direction among the plurality of light-emitting, and

wherein all of the first boundary areas are spaced apart from each other in the first direction.

19. The light-emitting element according to claim 18 , wherein at least one remaining light-emitting cell, excluding the second light-emitting cell, among the light emitting cells, has a planar area smaller than a planar area of the second light-emitting cell.

20. The light-emitting element according to claim 18 , wherein the light-emitting cells comprise:

first adjacent light-emitting cells adjacent to each other in a first direction; and

second adjacent light-emitting cells adjacent to each other in the first direction and adjacent to the first adjacent light-emitting cells in a second direction orthogonal to the first direction.