Burst mode operation conditioning for a memory device
A controller for a phase change memory forms a dedicated burst write partition in the phase change memory and initializes memory cells of the dedicated burst write partition to a SET state. Programming of selected memory cells in the dedicated burst write partition is carried out using only RESET pulses.
1. A memory device comprising a memory controller configured to:
execute a background operation to prepare a dedicated burst write partition within a non-volatile memory;
dynamically set a size of the dedicated burst write partition based on expected foreground burst write operation activity for the memory device and a latency of the background operation;
wherein only a sub-region less than an entirety of the dedicated burst write partition is conditioned into a SET state during the background operation, based on a tradeoff of the latency of the background operation and a time and a capacity of the non-volatile memory available to carry out the foreground burst write operation activity; and
in response to the foreground burst write activity apply only state change pulses for a RESET state to program the sub-region of the dedicated burst write partition with data of the foreground burst write activity.
2. The memory device of claim 1 , wherein the non-volatile memory is a phase change memory.
3. The memory device of claim 1 , the controller further configured to identify a subset of memory cells of the dedicated burst write partition based on the data of the foreground burst write activity.
4. A memory device comprising:
a non-volatile memory; and
a controller configured to:
prepare a dedicated burst write partition in the non-volatile memory;
dynamically set a size of the dedicated burst write partition based on expected burst write operation activity for the memory device and a latency of preparing the dedicated burst write partition;
condition only a sub-region less than an entirety of the dedicated burst write partition into a SET state based on a tradeoff of the latency and a time and a capacity of the non-volatile memory available to carry out the burst write operation activity; and
in response to the burst write operation activity apply only state change pulses for a RESET state to program the sub-region of the dedicated burst write partition with data of the burst write operation activity.
5. The memory device of claim 4 , the controller configured to execute a foreground operation to direct the burst write operation activity to the sub-region of the dedicated burst write partition.
6. A method comprising:
preparing a dedicated burst write partition in a phase change memory with a background operation of a memory device controller using only SET pulses;
wherein a size of the dedicated burst write partition is dynamically set during the background operation based on expected burst write activity and a latency of the background operation, and only a sub-region less than an entirety of the dedicated burst write partition is prepared with the SET pulses based on a tradeoff of the latency and a time and capacity of the phase change memory available to carry out the burst write activity; and
in response to a foreground burst write operation, apply only state change pulses for a RESET state to program the sub-region of the dedicated burst write partition with data of the burst write activity.
7. The method of claim 6 , further comprising:
analyzing the burst write operation to identify a subset of memory cells of the dedicated burst write partition to which to apply the RESET pulses.
8. The memory device of claim 4 , the controller further configured to execute a background operation to dynamically set the size of the dedicated burst write partition and to condition only the sub-region into the SET state.