IP Library Granted Patent US 11,500,442
Granted Patent B2
US 11,500,442 · App. 16/353,830 · Granted Nov 15, 2022

System for converting neuron current into neuron current-based time pulses in an analog neural memory in a deep learning artificial neural network

Inventors: Hieu Van Tran (San Jose, CA); Vipin Tiwari (Dublin, CA); Mark Reiten (Alamo, CA); Nhan Do (Saratoga, CA)
Assignee: SILICON STORAGE TECHNOLOGY, INC.
G06F1/3234G06F17/16G06N3/04G06N3/08G11C11/54G11C16/0425G11C16/0466
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Quick Facts
Patent No.
US 11,500,442
App. No.
16/353,830
Granted
Nov 15, 2022
Kind
B2
Abstract

Numerous embodiments are disclosed for converting neuron current output by a vector-by-matrix multiplication (VMM) array into neuron current-based time pulses and providing such pulses as an input to another VMM array within an artificial neural network. Numerous embodiments are disclosed for converting the neuron current-based time pulses into analog current or voltage values if an analog input is needed for the VMM array.

Claims (88)

1. A vector-by-matrix multiplication system, comprising:

an array of non-volatile memory cells arranged into rows and columns;

an input block coupled to the array to receive one or more input pulses, convert the one or more input pulses into an analog voltage, and apply the analog voltage to a word line or a control gate line in the array during a vector matrix multiplier operation; and

an output block coupled to the array to generate a set of digital bits in response to a neuron current drawn by the array during the vector matrix multiplier operation,

wherein the output block comprises:

a first operational amplifier comprising an inverting input terminal, a non-inverting input terminal, and an output terminal;

a reference current source to generate a reference current at an output thereof;

a first switch to selectively couple the output of the reference current source to the inverting input terminal of the first operational amplifier;

a second switch to selectively couple the neuron current to the inverting input terminal of the first operational amplifier;

a capacitor coupled between the inverting input terminal of the first operational amplifier and the output terminal of the first operational amplifier;

a third switch to selectively couple the inverting input terminal of the first operational amplifier and the output terminal of the first operational amplifier; and

a second operational amplifier comprising a non-inverting input terminal coupled to the output terminal of the first operational amplifier, an inverting input terminal, and an output terminal to generate a digital pulse in response to the neuron current.

2. The vector-by-matrix multiplication system of claim 1 , further comprising a gate arranged to receive the generated digital pulse and a clock to generate a series of pulses.

3. The vector-by-matrix multiplication system of claim 2 , further comprising a counter to count the series of pulses output by the gate to generate a count value comprising the digital bits.

4. A vector-by-matrix multiplication system, comprising:

an array of non-volatile memory cells arranged into rows and columns;

an input block coupled to the array to receive one or more input pulses, convert the one or more input pulses into an analog voltage, and apply the analog voltage to a word line or a control gate line in the array during a vector matrix multiplier operation; and

an output block coupled to the array to generate a set of digital bits in response to a neuron current drawn by the array during the vector matrix multiplier operation,

wherein the output block comprises:

an operational amplifier comprising an inverting input terminal, a non-inverting input terminal, and an output terminal;

a reference current source to draw a reference current from a node coupled to the non-inverting input terminal of the operational amplifier;

a capacitor coupled between the non-inverting input terminal of the operational amplifier and ground;

a switch to selectively couple the non-inverting input terminal of the operational amplifier to a bias voltage source; and

a logic circuit coupled to the output terminal of the operational amplifier;

wherein the neuron current is provided to the non-inverting input of the operational amplifier, and the set of digital bits are provided by the logic circuit.

5. The vector-by-matrix multiplication system of claim 4 , wherein the one or more input pulses comprises a single pulse.

6. The vector-by-matrix multiplication system of claim 4 , wherein the one or more input pulses comprises a series of pulses.

7. The vector-by-matrix multiplication system of claim 4 , wherein the input block comprises a digital-to-analog converter.

8. The vector-by-matrix multiplication system of claim 7 , wherein the digital-to-analog converter comprises a pulse-to-voltage converter.

9. The vector-by-matrix multiplication system of claim 4 , wherein the non-volatile memory cells in the array of non-volatile memory cells are split-gate flash memory cells.

10. The vector-by-matrix multiplication system of claim 4 , wherein the non-volatile memory cells in the array of non-volatile memory cells are stacked-gate flash memory cells.

11. A vector-by-matrix multiplication system, comprising:

an array of non-volatile memory cells arranged into rows and columns;

an input block coupled to the array to receive a first set of digital bits, convert the first set of digital bits into an analog voltage, and apply the analog voltage to a word line or a control gate line in the array during a vector matrix multiplier operation; and

an output block coupled to the array to generate a second set of digital bits in response to a neuron current drawn by the array during the vector matrix multiplier operation, wherein the output block comprises an integrating analog-to-digital converter to generate an output pulse in response to the neuron current and logic to convert the output pulse into a pulse series and count pulses in the pulse series to generate the second set of digital bits.

12. The vector-by-matrix multiplication system of claim 11 , wherein the input block comprises: a digital-to-analog converter.

13. The vector-by-matrix multiplication system of claim 12 , wherein the digital-to-analog converter comprises a digital data to voltage converter.

14. The vector-by-matrix multiplication system of claim 11 , wherein the non-volatile memory cells in the array of non-volatile memory cells are split-gate flash memory cells.

15. The vector-by-matrix multiplication system of claim 11 , wherein the non-volatile memory cells in the array of non-volatile memory cells are stacked-gate flash memory cells.

16. A vector-by-matrix multiplication system, comprising:

an array of non-volatile memory cells arranged into rows and columns;

an input block coupled to the array to receive a first set of digital bits, convert the first set of digital bits into an analog voltage and apply the analog voltage to a word line or a control gate line in the array during a vector matrix multiplier operation; and

an output block coupled to the array to generate a second set of digital bits as an output in response to a neuron current drawn by the array during the vector matrix multiplier operation,

wherein the output block comprises a circuit to map one or more digital pulses to the second set of digital bits using a mapping function or mapping table.

17. The vector-by-matrix multiplication system of claim 16 , wherein the mapping function or the mapping table simulates a sigmoid function.

18. The vector-by-matrix multiplication system of claim 16 , wherein the mapping function or the mapping table simulates a tanh function.

19. The vector-by-matrix multiplication system of claim 16 , wherein the mapping function or the mapping table simulates a ReLu function.

20. The vector-by-matrix multiplication system of claim 16 , wherein the mapping function or the mapping table simulates an activation function.

21. The vector-by-matrix multiplication system of claim 16 , wherein the mapping function or the mapping table quantizes the digital pulses.

22. The vector-by-matrix multiplication system of claim 16 , wherein the non-volatile memory cells in the array of non-volatile memory cells are split-gate flash memory cell.

23. The vector-by-matrix multiplication system of claim 16 , wherein the non-volatile memory cells in the array of non-volatile memory cells are stacked-gate flash memory cell.

24. A vector-by-matrix multiplication system, comprising:

an array of non-volatile memory cells arranged into rows and columns;

an input block coupled to the array to receive an input comprising one or more input pulses and to apply the input to an input line in the array during a vector matrix multiplier operation, wherein the one or more input pulses comprises a series of pulses, wherein a number of the input pulses in the series of pulses is proportional to a neuron current; and

an output block coupled to an output line from the array to generate a set of digital bits in response to an output on the output line during the vector matrix multiplier operation.

25. The vector-by-matrix multiplication system of claim 24 , wherein the output is a current.

26. The vector-by-matrix multiplication system of claim 24 , wherein the output is a voltage.

27. The vector-by-matrix multiplication system of claim 24 , wherein the output line is a bit line coupled to bit line terminals of a plurality of non-volatile memory cells in the array.

28. The vector-by-matrix multiplication system of claim 24 , wherein the output line is a source line coupled to source line terminals of a plurality of non-volatile memory cells in the array.

29. The vector-by-matrix multiplication system of claim 24 , wherein the output line is a word line coupled to word line terminals of a plurality of non-volatile memory cells in the array.

30. The vector-by-matrix multiplication system of claim 24 , wherein the output line is a control gate line coupled to control gate terminals of a plurality of non-volatile memory cells in the array.

31. The vector-by-matrix multiplication system of claim 24 , wherein the non-volatile memory cells in the array of non-volatile memory cells are split-gate flash memory cells.

32. The vector-by-matrix multiplication system of claim 24 , wherein the non-volatile memory cells in the array of non-volatile memory cells are stacked-gate flash memory cells.

33. A vector-by-matrix multiplication system, comprising:

an array of non-volatile memory cells arranged into rows and columns;

an input block coupled to the array to receive an input comprising one or more input pulses and apply the input to an input line in the array during a vector matrix multiplier operation, wherein the one or more input pulses comprises a series of pulses, wherein a number of the input pulses in the series of pulses is proportional to a neuron current; and

an output block coupled to an output line from the array.

34. The vector-by-matrix multiplication system of claim 33 , wherein the output block generates a set of digital bits in response to an output on the output line during the vector matrix multiplier operation.

35. The vector-by-matrix multiplication system of claim 33 , wherein the output line outputs a current signal.

36. The vector-by-matrix multiplication system of claim 33 , wherein the output line outputs a voltage signal.

37. The vector-by-matrix multiplication system of claim 33 , wherein the output line is a bit line coupled to bit line terminals of a plurality of non-volatile memory cells in the array.

38. The vector-by-matrix multiplication system of claim 33 , wherein the output line is a source line coupled to source line terminals of a plurality of non-volatile memory cells in the array.

39. The vector-by-matrix multiplication system of claim 33 , wherein the output line is a word line coupled to word line terminals of a plurality of non-volatile memory cells in the array.

40. The vector-by-matrix multiplication system of claim 33 , wherein the output line is a control gate line coupled to control gate terminals of a plurality of non-volatile memory cells in the array.

41. The vector-by-matrix multiplication system of claim 33 , wherein the non-volatile memory cells in the array of non-volatile memory cells are split-gate flash memory cells.

42. The vector-by-matrix multiplication system of claim 33 , wherein the non-volatile memory cells in the array of non-volatile memory cells are stacked-gate flash memory cells.

43. A vector-by-matrix multiplication system, comprising:

an array of non-volatile memory cells arranged into rows and columns;

an input block coupled to the array to receive an input comprising digital input bits and apply the input to an input line in the array during a vector matrix multiplier operation, wherein the input comprises a series of pulses, wherein a number of pulses in the series of pulses is proportional to a neuron current; and

an output block coupled to an output line from the array to generate one or more pulses during the vector matrix multiplier operation.

44. The vector-by-matrix multiplication system of claim 43 , wherein the output line outputs a current signal.

45. The vector-by-matrix multiplication system of claim 43 , wherein the output line outputs a voltage signal.

46. The vector-by-matrix multiplication system of claim 43 , wherein the output line is a bit line coupled to bit line terminals of a plurality of non-volatile memory cells in the array.

47. The vector-by-matrix multiplication system of claim 43 , wherein the output line is a source line coupled to source line terminals of a plurality of non-volatile memory cells in the array.

48. The vector-by-matrix multiplication system of claim 43 , wherein the output line is a word line coupled to word line terminals of a plurality of non-volatile memory cells in the array.

49. The vector-by-matrix multiplication system of claim 43 , wherein the output line is a control gate line coupled to control gate terminals of a plurality of non-volatile memory cells in the array.

50. The vector-by-matrix multiplication system of claim 43 , wherein the non-volatile memory cells in the array of non-volatile memory cells are split-gate flash memory cells.

51. The vector-by-matrix multiplication system of claim 43 , wherein the non-volatile memory cells in the array of non-volatile memory cells are stacked-gate flash memory cells.

Assignments (13)
RELEASE OF SECURITY INTEREST Recorded Mar 14, 2022
From: WELLS FARGO BANK, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT
To: MICROCHIP TECHNOLOGY INCORPORATED; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
Reel/Frame 060894/0437 →
RELEASE OF SECURITY INTEREST Recorded Mar 11, 2022
From: WELLS FARGO BANK, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT
To: MICROCHIP TECHNOLOGY INCORPORATED; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
Reel/Frame 059363/0001 →
RELEASE OF SECURITY INTEREST Recorded Mar 10, 2022
From: WELLS FARGO BANK, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT
To: MICROCHIP TECHNOLOGY INCORPORATED; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
Reel/Frame 059863/0400 →
RELEASE OF SECURITY INTEREST Recorded Mar 9, 2022
From: WELLS FARGO BANK, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT
To: MICROCHIP TECHNOLOGY INCORPORATED; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
Reel/Frame 059358/0335 →
RELEASE OF SECURITY INTEREST Recorded Feb 28, 2022
From: JPMORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT
To: MICROCHIP TECHNOLOGY INCORPORATED; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
Reel/Frame 059263/0001 →
GRANT OF SECURITY INTEREST IN PATENT RIGHTS Recorded Nov 19, 2021
From: MICROCHIP TECHNOLOGY INCORPORATED; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
To: WELLS FARGO BANK, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT
Reel/Frame 058214/0625 →
SECURITY INTEREST Recorded Jun 4, 2021
From: MICROCHIP TECHNOLOGY INCORPORATED; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
To: WELLS FARGO BANK, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT
Reel/Frame 057935/0474 →
SECURITY INTEREST Recorded Dec 24, 2020
From: MICROCHIP TECHNOLOGY INCORPORATED; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
To: WELLS FARGO BANK, NATIONAL ASSOCIATION, AS COLLATERAL AGENT
Reel/Frame 055671/0612 →
SECURITY INTEREST Recorded Jun 5, 2020
From: MICROCHIP TECHNOLOGY INC.; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
To: JPMORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT
Reel/Frame 052856/0909 →
SECURITY INTEREST Recorded Jun 5, 2020
From: MICROCHIP TECHNOLOGY INC.; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
To: WELLS FARGO BANK, NATIONAL ASSOCIATION
Reel/Frame 053468/0705 →
RELEASE OF SECURITY INTEREST Recorded May 30, 2020
From: JPMORGAN CHASE BANK, N.A, AS ADMINISTRATIVE AGENT
To: MICROCHIP TECHNOLOGY INC.; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
Reel/Frame 053466/0011 →
SECURITY INTEREST Recorded Apr 24, 2020
From: MICROCHIP TECHNOLOGY INC.; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
To: JPMORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT
Reel/Frame 053311/0305 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 16, 2019
From: TRAN, HIEU VAN; TIWARI, VIPIN; REITEN, MARK; DO, NHAN
To: SILICON STORAGE TECHNOLOGY, INC.
Reel/Frame 049204/0276 →
Cited By (3)
US 12,249,368 US 12,283,314 US 12,354,651