PLASMA PROCESSING APPARATUS AND MEMBER OF PLASMA PROCESSING CHAMBER
A plasma processing apparatus includes: a processing chamber disposed inside a vacuum container and in which plasma is formed; and a member which is a member forming an inner wall surface of the processing chamber and is disposed on a surface to be exposed to the plasma and has a coating film formed by spraying of yttrium fluoride or a material containing the yttrium fluoride. A ratio of an orthorhombic crystal of the yttrium fluoride or the material containing the yttrium fluoride forming the coating film relative to the entirety is 60% or more.
1 . A plasma processing apparatus comprising:
a processing chamber disposed inside a vacuum container and in which plasma is formed; and
a member which is a member forming an inner wall surface of the processing chamber and is disposed on a surface to be exposed to the plasma and has a coating film formed by spraying of yttrium fluoride or a material containing the yttrium fluoride,
wherein a ratio of an orthorhombic crystal of the yttrium fluoride or the material containing the yttrium fluoride forming the coating film relative to entirety is 60% or more.
2 . The plasma processing apparatus according to claim 1 , wherein
a size of the crystal is 50 nm or smaller.
3 . A method of manufacturing a plasma processing apparatus, which comprises: a processing chamber disposed inside a vacuum container and in which plasma is formed; and a member which is a member forming an inner wall surface of the processing chamber and is disposed on a surface to be exposed to the plasma and has a coating film formed by spraying of yttrium fluoride or a material containing the yttrium fluoride, the method comprising:
spraying particles of the yttrium fluoride or the material containing the yttrium fluoride using atmospheric plasma while maintaining a surface of the coating film at 280° C. or higher to form the coating film.
4 . The method of manufacturing the plasma processing apparatus according to claim 3 , wherein
the particles of the yttrium fluoride or the material containing the yttrium fluoride are sprayed using atmospheric plasma while maintaining a surface of the coating film at 350° C. or lower to form the coating film.
5 . A member of a plasma processing chamber, which comprises a processing chamber disposed inside a vacuum container and in which plasma is formed, forming an inner wall surface of the processing chamber of the plasma processing apparatus in which a sample disposed inside the processing chamber is processed using plasma generated inside the processing chamber, the member comprising
a coating film disposed on a surface to be exposed to the plasma,
wherein the coating film is formed by spraying of yttrium fluoride or a material containing the yttrium fluoride such that a ratio of an orthorhombic crystal of the yttrium fluoride or the material containing the yttrium fluoride forming the coating film relative to entirety is 60% or more.
6 . The member of the plasma processing chamber according to claim 5 , wherein
a size of the crystal is 50 nm or smaller.
7 . A method of manufacturing a member of a plasma processing chamber, the member forming an inner wall surface of a processing chamber disposed inside a vacuum container and in which plasma is formed, disposed to a surface to be exposed to the plasma, and having a coating film formed by spraying of yttrium fluoride or a material containing the yttrium fluoride, the method comprising:
spraying particles of the yttrium fluoride or the material containing the yttrium fluoride using atmospheric plasma while maintaining a surface of the coating film at 280° C. or higher to form the coating film.
8 . The method of manufacturing the member of a plasma processing chamber according to claim 7 , wherein
the particles of the yttrium fluoride or the material containing the yttrium fluoride are sprayed using atmospheric plasma while maintaining a surface of the coating film at 350° C. or lower to form the coating film.