Semiconductor device and method of manufacturing the same, and electronic apparatus
A semiconductor device is provided as a back-illuminated solid-state imaging device. The device is manufactured by bonding a first semiconductor wafer with a pixel array in a half-finished product state and a second semiconductor wafer with a logic circuit in a half-finished product state together, making the first semiconductor wafer into a thin film, electrically connecting the pixel array and the logic circuit, making the pixel array and the logic circuit into a finished product state, and dividing the first semiconductor wafer and the second semiconductor being bonded together into microchips.
1. A light detecting device, comprising:
a first semiconductor section including a first semiconductor substrate and a first wiring layer,
wherein the first semiconductor substrate includes a photodiode and a transfer transistor, and
wherein the first wiring layer includes a first plurality of wirings and a first insulating layer; and
a second semiconductor section including a second semiconductor substrate and a second wiring layer,
wherein the second semiconductor substrate includes a transistor,
wherein the second wiring layer includes a second plurality of wirings and a second insulating layer;
wherein the first semiconductor section and the second semiconductor section are bonded to each other,
wherein at least a first wiring of the first plurality of wirings and at least a first wiring of the second plurality of wirings are electrically connected to each other via a first connection conductor, and
wherein at least a second wiring of the second plurality of wirings and an electrode bump disposed on a surface of the second semiconductor section opposite to a bonding surface for the first semiconductor section are electrically connected to each other via a second connection conductor.
2. The light detecting device according to claim 1 , wherein the first connection conductor extends from a light incident side of the first semiconductor section to the first wiring of the second plurality of wirings.
3. The light detecting device according to claim 1 , wherein the second connection conductor extends from the surface of the second semiconductor section to the second wiring of the second plurality of wirings.
4. The light detecting device according to claim 1 , wherein the first connection conductor has a through-connection conductor, a connection conductor, and a connection wiring, wherein the through-connection conductor penetrates the first semiconductor section and contacts the first wiring of the second plurality of wirings, wherein the connection conductor penetrates the first semiconductor substrate and contacts the first wiring of the first plurality of wirings, and wherein the connection wiring electrically connects the through-connection conductor and the connection conductor.
5. The light detecting device according to claim 4 , wherein the connection conductor is disposed at a light incident surface of the first semiconductor section.
6. The light detecting device according to claim 1 , wherein the first connection conductor has a through-connection conductor, and wherein the through-connection conductor penetrates the first semiconductor section and contacts the first wiring of the second plurality of wirings.
7. The light detecting device according to claim 1 , wherein the second connection conductor penetrates the second semiconductor substrate.
8. The light detecting device according to claim 1 , wherein the electrode bump electrically connects to an external wiring.
9. The light detecting device according to claim 1 , wherein the first semiconductor substrate includes a reset transistor and an amplification transistor.
10. The light detecting device according to claim 9 , wherein the first semiconductor substrate includes a selection transistor.
11. The light detecting device according to claim 1 , wherein the transistor of the second semiconductor substrate is disposed in a logic circuit or a memory circuit.
12. A light detecting device, comprising:
a first semiconductor section including a first semiconductor substrate and a first wiring layer,
wherein the first semiconductor substrate includes a photodiode and a transfer transistor, and
wherein the first wiring layer includes a first plurality of wirings and a first insulating layer; and
a second semiconductor section including a second semiconductor substrate and a second wiring layer,
wherein the second semiconductor substrate includes a transistor,
wherein the second wiring layer includes a second plurality of wirings and a second insulating layer;
wherein the first semiconductor section and the second semiconductor section are bonded to each other,
wherein at least a first wiring of the first plurality of wirings and at least a first wiring of the second plurality of wirings are connected to each other, and
wherein at least a second wiring of the second plurality of wirings and an electrode bump disposed on a surface of the second semiconductor section opposite to a bonding surface for the first semiconductor section are electrically connected to each other via a second connection conductor.
13. The light detecting device according to claim 12 , wherein the first wiring of the first plurality of wirings and the first wiring of the second plurality of wirings are in direct contact with each other.
14. The light detecting device according to claim 12 , wherein the second connection conductor extends from the surface of the second semiconductor section to the second wiring of the second plurality of wirings.
15. The light detecting device according to claim 12 , wherein the second connection conductor penetrates the second semiconductor substrate.
16. The light detecting device according to claim 12 , wherein the electrode bump electrically connects to an external wiring.
17. The light detecting device according to claim 12 , wherein the first semiconductor substrate includes a reset transistor and an amplification transistor.
18. The light detecting device according to claim 17 , wherein the first semiconductor substrate includes a selection transistor.
19. The light detecting device according to claim 12 , wherein the transistor of the second semiconductor substrate is disposed in a logic circuit or a memory circuit.
20. An electric apparatus, comprising:
a light detecting device comprising:
a first semiconductor section including a first semiconductor substrate and a first wiring layer,
wherein the first semiconductor substrate includes a photodiode and a transfer transistor, and
wherein the first wiring layer includes a first plurality of wirings and a first insulating layer; and
a second semiconductor section including a second semiconductor substrate and a second wiring layer,
wherein the second semiconductor substrate includes a transistor,
wherein the second wiring layer includes a second plurality of wirings and a second insulating layer;
wherein the first semiconductor section and the second semiconductor section are bonded to each other,
wherein at least a first wiring of the first plurality of wirings and at least a first wiring of the second plurality of wirings are electrically connected to each other via a first connection conductor, and
wherein at least a second wiring of the second plurality of wirings and an electrode bump disposed on a surface of the second semiconductor section opposite to a bonding surface for the first semiconductor section are electrically connected to each other via a second connection conductor.
21. An electric apparatus, comprising:
a light detecting device comprising:
a first semiconductor section including a first semiconductor substrate and a first wiring layer,
wherein the first semiconductor substrate includes a photodiode and a transfer transistor, and
wherein the first wiring layer includes a first plurality of wirings and a first insulating layer; and
a second semiconductor section including a second semiconductor substrate and a second wiring layer,
wherein the second semiconductor substrate includes a transistor,
wherein the second wiring layer includes a second plurality of wirings and a second insulating layer;
wherein the first semiconductor section and the second semiconductor section are bonded to each other,
wherein at least a first wiring of the first plurality of wirings and at least a first wiring of the second plurality of wirings are connected to each other, and
wherein at least a second wiring of the second plurality of wirings and an electrode bump disposed on a surface of the second semiconductor section opposite to a bonding surface for the first semiconductor section are electrically connected to each other via a second connection conductor.