Methods and apparatus for cleaving of semiconductor substrates
Methods and apparatus for cleaving a substrate in a semiconductor chamber. The semiconductor chamber pressure is adjusted to a process pressure, a substrate is then heated to a nucleation temperature of ions implanted in the substrate, the temperature of the substrate is then adjusted below the nucleation temperature of the ions, and the temperature is maintained until cleaving of the substrate occurs. Microwaves may be used to provide heating of the substrate for the processes. A cleaving sensor may be used for detection of successful cleaving by detecting pressure changes, acoustic emissions, changes within the substrate, and/or residual gases given off by the implanted ions when the cleaving occurs.
1. A method of cleaving a substrate in a chamber, comprising:
adjusting a pressure of the chamber to a process pressure;
adjusting a temperature of the substrate to a nucleation temperature of ions implanted in the substrate using fast sweeping microwaves (FSM);
adjusting the temperature of the substrate below the nucleation temperature of the ions implanted in the substrate using FSM;
maintaining the temperature of the substrate at a soak temperature; and
detecting when cleaving of the substrate has occurred.
2. The method of claim 1 , further comprising:
using FSM with a frequency range of approximately 5.85 GHz to approximately 6.65 GHz.
3. The method of claim 2 , further comprising:
sweeping the frequency range at a rate of approximately 750 microseconds between frequencies to approximately 25 microseconds between frequencies.
4. The method of claim 1 , further comprising:
detecting the cleaving of the substrate by a change in a pressure of the chamber, by an acoustic emission, or by a presence of a residual gas associated with the ions implanted in the substrate.