Electronic device having a substrate-to-substrate interconnection structure and manufacturing method thereof
An electronic device and a method of making an electronic device. As non-limiting examples, various aspects of this disclosure provide various methods of manufacturing electronic devices, and electronic devices manufactured thereby, that comprise utilizing an adhesive layer to attach an upper electronic package to a lower die and/or utilizing metal pillars for electrically connecting the upper electronic package to a lower substrate, wherein the metal pillars have a smaller height above the lower substrate than the lower die.
1. An electronic device comprising:
a lower substrate (LS) comprising a top LS side, a bottom LS side, and a lateral LS side between the top LS side and the bottom LS side;
a semiconductor die comprising a top die side, a bottom die side coupled to the top LS side, and a lateral die side between the top die side and the bottom die side;
a first conductive interconnection structure between the semiconductor die and the lower substrate and electrically connecting the semiconductor die to the lower substrate;
an adhesive comprising a top adhesive side, a bottom adhesive side adhered to the top die side, and a lateral adhesive side between the top adhesive side and the bottom adhesive side;
an upper substrate (US) comprising a top US side, a bottom US side adhered to the top adhesive side, and a lateral US side between the top US side and the bottom US side;
a substrate-to-substrate (S2S) interconnection structure that extends between the top LS side and the bottom US side, where the S2S interconnection structure comprises a solder portion and a non-solder metal portion, wherein the non-solder metal portion comprises copper, and wherein at least part of the non-solder metal portion is positioned directly lateral of the semiconductor die; and
a first encapsulating material of a single continuous material that covers the top LS side, the lateral die side, and the lateral adhesive side, where the first encapsulating material comprises a first top planar surface that is coplanar with the top adhesive side.
2. The electronic device of claim 1 , wherein the non-solder metal portion of the S2S interconnection structure comprises a copper post.
3. The electronic device of claim 1 , wherein in a vertical cross-section, the non-solder metal portion of the S2S interconnection structure is solid with no voids.
4. The electronic device of claim 1 , wherein the solder portion of the S2S interconnection structure is positioned vertically between the bottom US side and an uppermost surface of the non-solder metal portion of the S2S interconnection structure.
5. The electronic device of claim 1 , wherein at least part of the solder portion of the S2S interconnection structure is positioned directly lateral of the die.
6. The electronic device of claim 1 , wherein the lower substrate comprises a laminate substrate.
7. The electronic device of claim 1 , comprising an underfill material that contacts the top LS side, the bottom die side, and the lateral die sides, and where the first encapsulating material laterally surrounds the underfill material.
8. The electronic device of claim 1 , wherein the first encapsulating material comprises a second top planar surface at a different level than the first top planar surface.
9. The electronic device of claim 1 , wherein a portion of the first encapsulating material is vertically higher than the bottom US side.
10. The electronic device of claim 1 , comprising a second encapsulating material coupled to the upper substrate, where a majority of the second encapsulating material is below an uppermost surface of the first encapsulating material.
11. The electronic device of claim 10 , wherein the uppermost surface of the first encapsulating material is coplanar with an uppermost surface of the second encapsulating material.
12. An electronic device comprising:
a lower substrate (LS) comprising a top LS side, a bottom LS side, and a lateral LS side between the top LS side and the bottom LS side;
a semiconductor die comprising a top die side, a bottom die side coupled to the top LS side, and a lateral die side between the top die side and the bottom die side;
a first conductive interconnection structure between the semiconductor die and the lower substrate and electrically connecting the semiconductor die to the lower substrate;
an adhesive comprising a top adhesive side, a bottom adhesive side adhered to the top die side, and a lateral adhesive side between the top adhesive side and the bottom adhesive side;
an upper substrate (US) comprising a top US side, a bottom US side adhered to the top adhesive side, and a lateral US side between the top US side and the bottom US side;
a substrate-to-substrate (S2S) interconnection structure that extends between the top LS side and the bottom US side; and
a first encapsulating material of a single continuous material that covers the top LS side, the lateral die side, the lateral adhesive side, and a portion of the bottom adhesive side,
where the first encapsulating material comprises a first surface that is coplanar with the top adhesive side.
13. The electronic device of claim 12 , comprising a second encapsulating material coupled to the upper substrate, where a majority of the second encapsulating material is below an uppermost surface of the first encapsulating material.
14. The electronic device of claim 12 , wherein the S2S interconnection structure comprises a non-solder metal portion comprising copper that is positioned directly lateral of the semiconductor die.
15. The electronic device of claim 12 , comprising an underfill material that contacts the top LS side, the bottom die side, and the lateral die sides, and where the first encapsulating material laterally surrounds the underfill material.
16. A method of manufacturing an electronic device, the method comprising:
providing a lower substrate (LS) comprising a top LS side, a bottom LS side, and a lateral LS side between the top LS side and the bottom LS side;
providing a semiconductor die comprising a top die side, a bottom die side coupled to the top LS side, and a lateral die side between the top die side and the bottom die side;
providing a first conductive interconnection structure between the semiconductor die and the lower substrate and electrically connecting the semiconductor die to the lower substrate;
providing an adhesive comprising a top adhesive side, a bottom adhesive side adhered to the top die side, and a lateral adhesive side between the top adhesive side and the bottom adhesive side;
providing an upper substrate (US) coupled to the adhesive, the upper substrate (US) comprising a top US side, a bottom US side adhered to the top adhesive side, and a lateral US side between the top US side and the bottom US side;
providing a substrate-to-substrate (S2S) interconnection structure that extends between the top LS side and the bottom US side, where the S2S interconnection structure comprises a solder portion and a non-solder metal portion; and
providing a first encapsulating material of a single continuous material that covers the top LS side, the lateral die side, the lateral adhesive side, and a portion of the bottom adhesive side, where the first encapsulating material comprises a first top planar surface that is coplanar with the top adhesive side.
17. The method of claim 16 , wherein the non-solder metal portion of the S2S interconnection structure comprises copper that is positioned directly lateral of the semiconductor die.