Generation of hydrogen reactive species for processing of workpieces
Methods, systems, and apparatus for generating hydrogen radicals for processing a workpiece, such as a semiconductor workpiece, are provided. In one example implementation, a method can include generating one or more species in a plasma chamber from an inert gas by inducing a plasma in the inert gas using a plasma source; mixing hydrogen gas with the one or more species to generate one or more hydrogen radicals; and exposing the workpiece in a processing chamber to the one or more hydrogen radicals.
1. A method for processing a workpiece, the method comprising:
generating one or more species in a plasma chamber from an inert gas by inducing a plasma in the inert gas using a plasma source;
filtering ions generated in the plasma using a separation grid to create a filtered mixture comprising neutral species passing through the separation grid, the separation grid comprising two or more grid plates;
injecting hydrogen gas with the neutral species of the filtered mixture between two grid plates of the separation grid to generate one or more hydrogen radicals; and
exposing the workpiece in a processing chamber to the one or more hydrogen radicals.
2. The method of claim 1 , wherein the inert gas comprises helium.
3. The method of claim 1 , wherein the plasma chamber is separated from the processing chamber by the separation grid.
4. The method of claim 1 , wherein the plasma is generated using an inductively coupled plasma source.
5. The method of claim 1 , wherein exposing the workpiece in the processing chamber to the one or more hydrogen radicals at least partially removes a photoresist layer on the workpiece.
6. The method of claim 1 , wherein exposing the workpiece in a processing chamber to the one or more hydrogen radicals at least partially removes a residual organic material on the workpiece.
7. The method of claim 1 , further comprising heating the workpiece to a temperature greater than about 400° C., wherein exposing the workpiece in the processing chamber to the one or more hydrogen radicals modifies silicon atom mobility.
8. The method of claim 1 , wherein exposing the workpiece in a processing chamber to the one or more hydrogen radicals at least partially removes a damaged silicon layer.
9. The method of claim 1 , wherein exposing the workpiece in a processing chamber to the one or more hydrogen radicals at least partially removes a suboxide layer.
10. The method of claim 1 , further comprising mixing the one or more hydrogen radicals with a metal-containing gas to deposit a metal on the workpiece.
11. The method of claim 10 , wherein the metal-containing gas comprises titanium.
12. The method of claim 10 , wherein the metal-containing gas comprises tantalum.
13. The method of claim 10 , wherein the metal-containing gas comprises aluminum.