Acoustic wave device with spinel layer and temperature compensation layer
An acoustic wave device that includes a spinel layer, a piezoelectric layer, a temperature compensating layer between the spinel layer and the piezoelectric layer and an interdigital transducer electrode on the piezoelectric layer is disclosed. The piezoelectric layer is disposed between the interdigital transducer electrode and the spinel layer. The acoustic wave device is configured to generate an acoustic wave having a wavelength of λ. The piezoelectric layer can have a thickness that is less than λ. In some embodiments, the spinel layer can be a polycrystalline spinel layer.
1. An acoustic wave device comprising:
a piezoelectric layer;
a spinel layer;
a temperature compensating layer disposed between the piezoelectric layer and the spinel layer, the temperature compensating layer having a first surface and a second surface, the first surface being in physical contact with the spinel layer, and the second surface being in physical contact with the piezoelectric layer; and
an interdigital transducer electrode on the piezoelectric layer, the piezoelectric layer being disposed between the temperature compensating layer and the interdigital transducer electrode.
2. The acoustic wave device of claim 1 wherein the spinel layer is a polycrystalline spinel layer.
3. The acoustic wave device of claim 1 wherein the spinel layer is a single crystalline spinel layer.
4. The acoustic wave device of claim 1 wherein the piezoelectric layer is a lithium tantalate layer.
5. The acoustic wave device of claim 1 wherein the piezoelectric layer is a lithium niobate layer.
6. The acoustic wave device of claim 1 wherein the acoustic wave device is a surface acoustic wave device configured to generate a surface acoustic wave.
7. The acoustic wave device of claim 1 wherein the acoustic wave device is configured to generate an acoustic wave having a wavelength of λ, and the piezoelectric layer has a thickness of less than λ.
8. The acoustic wave device of claim 1 wherein the temperature compensating layer includes silicon dioxide.
9. The acoustic wave device of claim 1 further comprising a substrate layer, the spinel layer being disposed between the substrate layer and the piezoelectric layer.
10. The acoustic wave device of claim 9 wherein the substrate layer is a silicon layer.
11. An acoustic wave device comprising:
a piezoelectric layer;
a spinel layer;
a temperature compensating layer disposed between the piezoelectric layer and the spinel layer;
an interdigital transducer electrode on the piezoelectric layer, the piezoelectric layer being disposed between the temperature compensating layer and the interdigital transducer electrode; and
a high impedance layer disposed between the temperature compensating layer and the spinel layer, the high impedance layer having a higher acoustic impedance than the spinel layer.
12. The acoustic wave device of claim 11 wherein the spinel layer is a polycrystalline spinel layer.
13. The acoustic wave device of claim 11 wherein the high impedance layer includes a nitride.
14. The acoustic wave device of claim 11 wherein the temperature compensating layer has a first surface and a second surface, the first surface being in physical contact with the high impedance layer, and the second surface being in physical contact with the piezoelectric layer.
15. A radio frequency module comprising:
an acoustic wave filter configured to filter a radio frequency signal, the acoustic wave filter including an acoustic wave device that includes a piezoelectric layer, an interdigital transducer electrode on the piezoelectric layer, a spinel layer, and a temperature compensating layer disposed between the piezoelectric layer and the spinel layer, the temperature compensating layer having a first surface in physical contact with the spinel layer and a second surface in physical contact with the piezoelectric layer; and
a package enclosing the acoustic wave filter.
16. The radio frequency module of claim 15 further comprising a second acoustic wave filter, the acoustic wave filter and the second acoustic wave filter being included in a duplexer.
17. The radio frequency module of claim 15 further comprising a radio frequency switch coupled to the acoustic wave filter, the radio frequency switch being enclosed within the package.
18. The radio frequency module of claim 17 further comprising a power amplifier enclosed within the package, the power amplifier configured to provide the radio frequency signal.
19. The radio frequency module of claim 15 wherein the acoustic wave device is a surface acoustic wave device configured to generate a surface acoustic wave having a wavelength of λ, and the piezoelectric layer has a thickness of less than λ.
20. A wireless communication device comprising:
an antenna; and
a radio frequency front end in communication with the antenna, the radio frequency front end including an acoustic wave filter configured to filter a radio frequency signal, the acoustic wave filter including an acoustic wave device that includes a piezoelectric layer, an interdigital transducer electrode on the piezoelectric layer, a spinel layer, a temperature compensating layer disposed between the piezoelectric layer and the spinel layer, and a high impedance layer disposed between the temperature compensating layer and the spinel layer, the high impedance layer having a higher acoustic impedance than the spinel layer.
21. The wireless communication device of claim 20 further comprising a second acoustic wave filter, the acoustic wave filter and the second acoustic wave filter being included in a duplexer.
22. The wireless communication device of claim 20 wherein the acoustic wave filter is a surface acoustic wave filter.