Granted Patent B2

US 12,476,606 · App. 18/526,616 · Granted Nov 18, 2025

Inventors: Hironori Fukuhara (Ibaraki, JP); Rei Goto (Osaka, JP); Keiichi Maki (Suita, JP)

Assignee: Skyworks Solutions, Inc.

H03H9/02574H03H3/10H03H9/02031H03H9/02559H03H9/02834H03H9/0585H03H9/14502H03H9/25H03H9/6406H03H9/725H10N30/072

Abstract

Claims (28)

1 . An acoustic wave device comprising:

a support substrate;

a ceramic layer over the support substrate, the ceramic layer having a thickness that is at least equal to or greater than a wavelength λ of an acoustic wave generated by the acoustic wave device, the ceramic layer configured to scatter back reflections to suppress one or more spurious modes in the acoustic wave device and the support substrate having a higher thermal conductivity than the ceramic layer;

a piezoelectric layer over the ceramic layer; and

at least a first interdigital transducer electrode over the piezoelectric layer.

2 . The acoustic wave device of claim 1 wherein the support substrate is a single crystal layer.

3 . The acoustic wave device of claim 1 wherein the support substrate includes silicon.

4 . The acoustic wave device of claim 1 wherein the acoustic wave has a wavelength of λ, and the piezoelectric layer has a thickness in a range from 3λ to 40λ.

5 . The acoustic wave device of claim 1 wherein a surface of the ceramic layer has a surface roughness in a range from 0.1 nanometers to 2 nanometers.

6 . The acoustic wave device of claim 1 wherein the ceramic layer and the piezoelectric layer are directly bonded to each other without an intervening layer.

7 . The acoustic wave device of claim 1 wherein the ceramic layer and the support substrate are bonded to each other by way of an adhesive.

8 . The acoustic wave device of claim 1 further comprising a temperature compensation layer over the first interdigital transducer electrode.

9 . The acoustic wave device of claim 1 wherein the piezoelectric layer includes lithium based piezoelectric layer.

10 . A method of manufacturing an acoustic wave device, the method comprising:

forming a ceramic layer to scatter back reflections to suppress one or more spurious modes in the acoustic wave device;

attaching a support substrate to a ceramic layer, the ceramic layer having a thickness that is at least equal to or greater than a wavelength λ of an acoustic wave generated by the acoustic wave device, and the support substrate having a higher thermal conductivity than the ceramic layer;

bonding a piezoelectric layer to a surface of the ceramic layer such that the piezoelectric layer and the support substrate are on opposing sides of the ceramic layer; and

forming at least a first interdigital transducer electrode over the piezoelectric layer.

11 . The method of claim 10 wherein the support substrate includes silicon.

12 . The method of claim 10 further comprising smoothing the surface of the ceramic layer prior to the bonding.

13 . The method of claim 12 wherein the surface of the ceramic layer has a maximum surface roughness of 2 nanometers or less after the smoothing.

14 . The method of claim 12 wherein the surface of the ceramic layer has an average surface roughness of 1 nanometer or less after the smoothing.

15 . The method of claim 12 wherein the smoothing includes chemical-mechanical polishing.

16 . The method of claim 10 further comprising smoothing a surface of the support substrate prior to the attaching.

17 . The method of claim 10 wherein the piezoelectric layer has a thickness in a range from 3λ to 40λ.

18 . The method of claim 10 wherein the attaching includes applying an adhesive between the support substrate and the ceramic layer.

19 . The method of claim 10 wherein the bonding the piezoelectric layer and the ceramic layer includes direct bonding.

20 . The method of claim 10 further comprising forming a temperature compensation layer over the first interdigital transducer electrode.

Continuity (4)

References Cited (94)